IXGR 16N170AH1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247 Outline
IC = I ; VCE = 10 V
Note 2 C25
6
10
S
Cies
Coes
Cres
1700
125
30
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qg
Qge
Qgc
65
13
24
nC
nC
nC
Inductive load, TJ = 25°C
IC = IC25, VGE = 15 V
td(on)
tri
td(off)
tfi
36
57
200
40
ns
ns
350 ns
150 ns
1.5 mJ
R = 10 Ω, VCE = 0.5 VCES
NoG te 3
Eoff
0.9
td(on)
tri
38
59
ns
ns
Inductive load, TJ = 125°C
IC = IC25, VGE = 15 V
Eon
1.5
mJ
ns
R = 10 Ω, VCE = 0.5 VCES
NoG te 3
td(off)
200
tfi
55
ns
Eoff
1.1
mJ
RthJC
RthCK
1.04 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 20A, VGE = 0 V, Note 2
2.7
V
IRM
trr
IF = 50A, V = 0 V, -diF/dt = 800 A/µs
50
A
VR = 600 VGE
150
ns
RthJC
1.5 K/W
Notes:1. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
3. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
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4,850,072
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5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
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6,583,505
6,683,344
6,710,405B2
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6,727,585
6,759,692
