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VUB72-16NOXT

型号：

VUB72-16NOXT

描述：

三相整流桥带制动斩波器[ Three Phase Rectifier Bridge with Brake Chopper ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

376 K

下载PDF手册
VUB 72-12/16NOXT  
VRRM = 1200/1600 V  
Three Phase Rectifier Bridge  
IdAVM  
=
110 A  
with Brake Chopper  
Part name (Marking on product)  
VUB72-12NOXT  
VUB72-16NOXT  
6 11  
12 10  
5
4
2
1
NTC  
NTC  
D1 D3 D5  
D
12  
11  
7
5
2
~ 1  
~ 7  
~ 9  
10  
9
6
D2 D4 D6  
T
4
Features:  
Application:  
Package:  
• High level of integration  
• Solder terminals for PCB mounting  
• UL pending, E72873  
• Three phase mains rectifier  
• Brake chopper:  
- IGBT with low saturation voltage  
• Drives with  
- mains input  
- DC link  
- HiPerFRED™ free wheeling diode  
- inverter or chopper feeding the machine  
- motor and generator/brake operation  
• Isolated DCB ceramic base plate  
• Large creepage and strike distances  
• High reliability  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20101119a  
1 - 6  
VUB 72-12/16NOXT  
Chopper IGBT T  
Ratings  
Symbol  
VCES  
Definitions  
Conditions  
min.  
typ. max. Unit  
collector emitter voltage  
max. DC gate voltage  
collector current  
TVJ = 25°C to 150°C  
1200  
+20  
V
V
VGES  
continuous  
-20  
IC25  
IC80  
DC  
DC  
TC = 25°C  
TC = 80°C  
58  
40  
A
A
collector emitter saturation voltage  
VCE(sat)  
IC = 35 A; VGE = 15 V  
TVJ = 25°C  
TVJ = 125°C  
1.85  
2.15  
2.2  
V
gate emitter threshold voltage  
collector emitter leakage current  
VGE(th)  
ICES  
IC = 1 mA  
TVJ = 25°C  
5.4  
6.5  
0.1  
V
VCE = VCES; VGE = 0 V  
TVJ = 25°C  
TVJ = 125°C  
mA  
mA  
0.1  
gate emitter leakage current  
IGES  
VCE = 0 V; VGE = 20 V  
500  
nA  
turn-on delay time  
current rise time  
turn-off delay time  
current fall time  
turn-on energy per pulse  
turn-off energy per pulse  
td(on)  
tr  
td(off)  
tf  
Eon  
Eoff  
70  
40  
250  
100  
3.8  
4.1  
ns  
ns  
ns  
ns  
mJ  
mJ  
inductive load  
TVJ = 125°C  
VCE = 600 V; IC = 35 A  
VGE = 15 V; RG = 27 W; L = 100 µH  
QGon  
VCE = 600 V; VGE = 15 V; IC = 35 A  
110  
nC  
reverse bias safe operating area  
short circuit safe operating area  
ICM  
VCEK  
RBSOA; VGE = 15 V; RG = 27 W; L = 100 µH  
70  
A
V
clamped inductive load  
;
TVJ = 125°C  
< VCES-LS·dI /dt  
tSC  
VCE = 900 V; VGE = 15 V;  
TVJ = 125°C  
10  
µs  
(SCSOA)  
RG = 27 W; non-repetitive  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthCH  
0.65 K/W  
K/W  
with heat transfer paste, see mounting instructions  
0.9  
Chopper Diode D  
Ratings  
Symbol  
VRRM  
Definitions  
max. repetitive reverse voltage  
Conditions  
min.  
typ. max. Unit  
TVJ = 150°C  
1200  
V
forward current  
IF25  
IF80  
DC  
TC = 25°C  
TC = 125°C  
25  
15  
A
A
forward voltage  
reverse current  
VF  
IF = 25 A  
VR = VRRM  
TVJ = 25°C  
TVJ = 125°C  
2.7  
2.0  
3.1  
V
V
IR  
TVJ = 25°C  
TVJ = 125°C  
0.1  
mA  
mA  
0.1  
reverse recovery current  
reverse recovery time  
IRM  
trr  
IF = 15 A; VR = 600 V  
diF /dt = -400 A/µs  
TVJ = 125°C  
16  
130  
A
ns  
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthJH  
2.3 K/W  
with heat transfer paste  
3.12 K/W  
Equivalent Circuits for Simulation  
I
R0  
V0  
Ratings  
Symbol  
Definitions  
Conditions  
min.  
typ. max. Unit  
Diode  
V0  
R0  
D1 - D6  
TVJ = 125°C  
TVJ = 150°C  
TVJ = 125°C  
0.85  
7
V
mW  
V
mW  
V
mW  
V0  
R0  
IGBT  
T
1.1  
40  
V0  
R0  
Diode  
D
1.25  
32  
IXYS reserves the right to change limits, test conditions and dimensions.  
20101119a  
© 2010 IXYS All rights reserved  
2 - 6  
VUB 72-12/16NOXT  
Input Rectifier Diode D1 - D6  
Symbol  
Conditions  
Ratings  
min.  
typ. max.  
max. repetitive reverse voltage  
VRRM  
VUB 72 -12 NO1  
VUB 72 -16 NO1  
TVJ = 25°C  
1200  
1600  
V
V
average forward current  
max. average DC output current  
max. surge forward current  
IFAV  
ID(AV)M  
IFSM  
sine 180°  
TC = 80°C  
TC = 80°C  
40  
110  
530  
A
A
A
rectangular; d = 1/3; bridge  
t = 10 ms; sine 50 Hz  
T
VJ = 25°C  
total power dissipation  
reverse current  
Ptot  
IR  
TC = 25°C  
100  
W
VR = VRRM  
VR = 0.8·VRRM  
TVJ = 25°C  
TVJ = 125°C  
0.02  
0.4  
mA  
mA  
forward voltage  
VF  
IF = 25 A  
TVJ = 25°C  
TVJ = 125°C  
1.0  
0.9  
1.1  
V
V
thermal resistance junction to case  
thermal resistance case to heatsink  
RthJC  
RthJH  
per diode  
TVJ = 25°C  
TVJ = 25°C  
1.2 K/W  
with heat transfer paste  
1.42 K/W  
Temperature Sensor NTC  
Ratings  
Symbol  
Definitions  
Conditions  
min.  
min.  
typ. max. Unit  
resistance  
1
T
1
R25  
B25/100  
T = 25°C  
2.2  
3560  
kW  
K
B25/100  
298K  
R(T) = R25 · e  
Module  
Ratings  
typ. max. Unit  
Symbol  
IRMS  
Definitions  
Conditions  
RMS current  
per pin  
100  
A
operating temperature  
max. virtual junction temperature  
storage temperature  
TVJ  
TVJM  
Tstg  
-40  
-40  
150  
150  
125  
°C  
°C  
°C  
isolation voltage  
mounting torque  
VISOL  
Md  
IISOL < 1 mA; 50/60 Hz;  
(M5)  
t = 1 min  
3600  
2.5  
V~  
2
Nm  
creep distance on surface  
strike distance through air  
dS  
dA  
5
5
mm  
mm  
Weight  
35  
g
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20101119a  
3 - 6  
VUB 72-12/16NOXT  
Outline Drawing  
Dimensions in mm (1 mm = 0.0394“)  
+0,2  
±1  
±1  
15,8  
0,5  
4,6  
±1  
5
Ø0,5  
R2  
35  
63  
26  
31,6  
±0,2  
50  
38,6  
±0,3  
±0,3  
±0,3  
14  
7
14  
±0,3  
7
4x45°  
R1  
±0,15  
25,75  
±0,3  
0,5  
51,5  
Product Marking  
Ordering  
Part Name  
Marking on Product Delivering Mode Base Qty Ordering Code  
Standard  
Standard  
VUB 72-12NOXT  
VUB 72-16NOXT  
VUB72-12NOXT  
VUB72-16NOXT  
Box  
Box  
10  
10  
510734  
510741  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20101119a  
4 - 6  
VUB 72-12/16NOXT  
80  
70  
60  
50  
40  
30  
20  
10  
0
500  
VR = 0.8VRRM  
typ.  
400  
300  
200  
100  
0
TVJ = 25°C  
TVJ = 150°C  
IFSM  
IF  
TVJ = 45°C  
max.  
[A]  
[A]  
TVJ = 150°C  
0.0  
0.5  
1.0  
1.5  
2.0  
0.001  
0.01  
0.1  
1
VF [V]  
t [s]  
Fig. 2 Surge overload current per  
rectifier diode  
Fig. 1 Forward current vs. voltage  
drop per rectifier diode  
10000  
80  
70  
60  
50  
40  
30  
20  
10  
0
VR = 0 V  
1000  
100  
10  
I2t  
TVJ = 45°C  
IdAVM  
TVJ = 150°C  
[A2s]  
[A]  
1
10  
0
40  
80  
120  
160  
TH [°C]  
t [ms]  
Fig. 4 I2t versus time per  
rectifier diode  
Fig. 3 Max. forward current vs. heatsink  
temperature (Rectifier bridge)  
140  
120  
100  
80  
RthHA [K/W]  
0.5  
1
1.5  
2
Ptot  
3
4
60  
[W]  
6
40  
20  
0
0
10  
20  
30  
40  
50  
60  
0
40  
80  
120  
160  
TA [°C]  
IdAVM [A]  
Fig. 5 Power dissipation vs. direct output current & ambient temperature (Rectifier bridge)  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20101119a  
5 - 6  
VUB 72-12/16NOXT  
70  
60  
50  
40  
30  
20  
10  
0
70  
60  
50  
40  
30  
20  
10  
0
13 V  
VGE = 15 V  
VGE = 15 V  
11 V  
17 V  
19 V  
TVJ = 25°C  
IC  
IC  
TVJ = 125°C  
TVJ = 125°C  
[A]  
[A]  
9 V  
0.0  
0.5  
1.0  
1.5  
VCE [V]  
Fig. 6 IGBT, typ. output characteristics  
2.0  
2.5  
3.0  
3.5  
0
1
2
3
4
5
VCE [V]  
Fig. 7 IGBT, typ. output characteristics  
10  
8
6
5
Eon  
RG = 27 Ω  
VCE = 600 V  
IC =  
VCE = 600 V  
VGE 15 V  
VJ = 125°C  
35 A  
Eon  
VGE  
= 15 V  
=
TVJ = 125°C  
T
Eoff  
6
E
E
Eoff  
[mJ]  
[mJ]  
4
4
3
2
0
0
20  
40  
60  
80  
20  
30  
40  
50  
60  
70  
80  
ICE [A]  
RG [Ω]  
Fig. 8 IGBT, typ. switching energy  
Fig. 9 IGBT, typ. switching energy  
versus collector current  
versusgate resistance  
101  
100  
10-1  
10-2  
10-3  
10-4  
10000  
1000  
100  
chopper diode  
rectifier diode  
IGBT  
R
ZthJC  
[Ω]  
[K/W]  
single pulse  
10  
-20  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
0
20 40 60 80 100 120 140 160  
t [s]  
T [°C]  
Fig. 10 Typ. transient thermal impedance  
Fig. 11 Typ. thermistor resistace vs. temperature  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20101119a  
6 - 6  
VUB 72-12/16NOXT  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
40  
35  
30  
25  
20  
15  
10  
5
TVJ = 125°C  
VR = 800 V  
TVJ = 25°C  
100°C  
150°C  
Qr  
IF = 30 A  
IF = 15 A  
IF = 7.5 A  
IF  
[µC]  
[A]  
0
100  
1000  
0
1
2
3
4
-diF /dt [A/µs]  
VF [V]  
Fig. 13 Typ. reverse recovery charge  
Qr versus -diF/dt  
Fig. 12 Forward current IF versus VF  
2.0  
1.5  
1.0  
0.5  
0.0  
50  
40  
30  
20  
10  
0
TVJ = 125°C  
VR = 800 V  
IF = 30 A  
IF = 15 A  
IF = 7.5 A  
IRM  
Kf  
[A]  
IRM  
Qr  
0
40  
80  
TVJ [°C]  
120  
160  
0
200  
400  
600  
800 1000  
-diF /dt [A/µs]  
Fig. 15 Dynamic parameters  
Qr, I RM versus TVJ  
Fig. 14 Typ. peak reverse current  
I
RM versus -diF/dt  
120  
80  
40  
0
1.2  
180  
160  
140  
120  
100  
TVJ = 125°C  
VR = 800 V  
TVJ = 125°C  
IF = 15 A  
V
R = 800 V  
0.8  
0.4  
0.
IF = 30 A  
IF = 15 A  
IF = 7.5 A  
trr  
tfr  
VFR  
[µs]  
[V]  
[ns]  
tfr  
VFR  
0
200  
400  
600  
800 1000  
0
200  
400  
600  
800 1000  
-diF /dt [A/µs]  
-diF /dt [A/µs]  
Fig. 17 Typ. peak forward voltage  
FR and tfr versus diF/dt  
Fig. 16 Typ. recovery time  
trr versus -diF/dt  
V
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2010 IXYS All rights reserved  
20101119a  
7 - 6  
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