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IXGQ90N27PB

型号：

IXGQ90N27PB

描述：

初步的技术资料PolarTM IGBT用于PDP的应用[ Preliminary Technical Information PolarTM IGBT for PDP Applications ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

116 K

下载PDF手册
Preliminary Technical Information  
PolarTM  
VCES  
ICP  
= 270 V  
= 340 A  
IXGQ90N27PB  
IGBT  
for PDP Applications  
VCE(sat) ≤ 2.1 V  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TO-3P  
TJ = 25°C to 150°C  
270  
V
VGEM  
IC25  
ICPEAK  
±30  
90  
V
A
G
C
TC = 25°C, IGBT chip capability  
E
(TAB)  
TJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1%  
Lead current limit  
340  
75  
A
A
IC(RMS)  
SSOA  
VGE = 15 V, TVJ = 150°C, RG = 20 Ω  
ICM = 90  
A
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
(RBSOA) Clamped inductive load, VCE < 270 V  
PC  
TC = 25°C  
150  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
• International standard package  
• Low VCE(sat)  
TL  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum plastic body temperature for 10 S 260  
300  
°C  
°C  
- for minimum on-state conduction  
TSOLD  
losses  
Md  
Mounting torque  
1.3/10  
5.5  
Nm/lb.in.  
g
• MOS Gate turn-on  
- drive simplicity  
Weight  
Applications  
• PDP Screen Drivers  
Symbol Test Conditions  
(TJ = 25°C unless otherwise specified)  
Characteristic Values  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 1 mA, VCE = VGE  
3.0  
5.5  
V
VCE = 270 V  
VGE = 0 V  
1 μA  
TJ = 125°C  
200 μA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
VCE(sat)  
VGE = 15V,  
Note 1  
IC = 50 A  
1.3 2.1  
V
V
V
V
TJ = 125°C  
IC = 100 A  
TJ = 125°C  
1.3  
1.67  
1.80  
© 2006 IXYS All rights reserved  
DS99609B(02/07)  
IXGQ90N27PB  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ. Max.  
gfs  
IC = 45 A, VCE = 10 V, Note 1  
30  
48  
S
Cies  
Coes  
Cres  
2750  
180  
48  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
79  
16  
29  
nC  
nC  
nC  
Qge  
Qgc  
IC = 45 A, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
td(off)  
tfi  
td(on)  
tri  
td(off)  
tfi  
21  
43  
82  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
IC = 50 A, VGE = 15 V  
VCE = 200 V, RG = 5 Ω  
170  
350  
21  
68  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
IC = 50 A, VGE = 15 V  
VCE = 200 V, RG = 5 Ω  
88  
340  
RthJC  
RthCS  
0.833 K/W  
K/W  
0.25  
Note 1: Pulse test, t < 300 us, duty cycle < 2%  
TO-3P Outline  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from data gathered during objective characterizations of preliminary engineering  
lots; but also may yet contain some information supplied during a pre-production design  
evaluation. IXYS reserves the right to change limits, test conditions, and dimensions  
without notice.  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXGQ90N27PB  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Exteded Output Characteristics  
@ 25ºC  
180  
160  
140  
120  
100  
80  
V
= 15V  
GE  
V
= 15V  
13V  
GE  
300  
250  
200  
150  
100  
50  
13V  
11V  
11V  
9V  
9V  
60  
40  
7V  
2
20  
7V  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
0
6
0.5  
1
1.5  
2.5  
3
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
180  
160  
140  
120  
100  
80  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
I
= 180A  
C
9V  
I
= 90A  
C
60  
40  
0.9  
0.8  
0.7  
7V  
I
= 45A  
100  
C
20  
0
-50  
-25  
0
25  
50  
75  
125  
150  
0.5  
1
1.5  
2
2.5  
3
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
200  
180  
160  
140  
120  
100  
80  
T
= 25ºC  
J
I
= 180A  
C
90A  
45A  
60  
T
= 125ºC  
J
40  
25ºC  
- 40ºC  
20  
0
7
8
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
10  
VGE - Volts  
VGE - Volts  
© 2006 IXYS All rights reserved  
IXGQ90N27PB  
Fig. 8. Resistive Turn-On Rise Time  
vs. Junction Temperature  
Fig. 7. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
110  
100  
90  
R
V
V
= 5  
Ω
G
= 15V  
GE  
CE  
I
= 90A  
C
= 240V  
80  
T
= - 40ºC  
J
25ºC  
125ºC  
70  
60  
I
= 45A  
C
50  
40  
0
25  
50  
75  
100  
125  
150  
175  
200  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 9. Resistive Turn-On Rise Time  
vs. Collector Current  
Fig. 10. Resistive Turn-On Switching Times  
vs. Gate Resistance  
110  
100  
90  
160  
150  
140  
130  
120  
110  
100  
90  
26  
25  
24  
23  
22  
21  
t r  
td(on)  
- - - -  
R
V
V
= 5  
Ω
G
T
J
= 125ºC, V = 15V  
GE  
= 15V  
GE  
CE  
T
J
= 125ºC  
V
= 200V  
CE  
= 200V  
80  
70  
I
= 90A  
C
60  
T
J
= 25ºC  
I
= 45A  
C
80  
50  
70  
40  
60  
45  
50  
55  
60  
65  
70  
75  
80  
85  
90  
4
6
8
10  
12  
14  
16  
18  
20  
IC - Amperes  
RG - Ohms  
Fig. 11. Resistive Turn-Off Switching Times  
vs. Junction Temperature  
Fig. 12. Resistive Turn-Off Switching Times  
vs. Collector Current  
480  
440  
400  
360  
320  
280  
240  
200  
160  
120  
110  
105  
100  
95  
450  
400  
350  
300  
250  
200  
150  
100  
94  
90  
86  
82  
78  
74  
70  
66  
t f  
R
td(off)  
- - - -  
t f  
R
td(off)  
- - - -  
= 5 , V  
= 15V  
GE  
Ω
G
= 5 , V  
= 15V  
GE  
Ω
G
I
= 45A  
C
V
= 200V  
CE  
V
= 200V  
CE  
T
J
= 125ºC  
90  
85  
80  
75  
T
J
= 25ºC  
I
= 90A  
C
70  
65  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
20  
30  
40  
50  
60  
70  
80  
90  
TJ - Degrees Centigrade  
IC - Amperes  
IXYS reserves the right to change limits, test conditions and dimensions.  
IXGQ90N27PB  
Fig. 13. Resistive Turn-Off Switching Times  
vs. Gate Resistance  
Fig. 14. Gate Charge  
440  
400  
360  
320  
280  
240  
200  
180  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
V
= 150V  
CE  
I
I
= 45A  
C
G
I
= 45A  
C
= 10 mA  
I
= 90A  
C
6
t f  
td(off)  
- - - -  
4
T
J
= 125ºC, V  
= 15V  
GE  
2
V
= 200V  
CE  
60  
0
4
6
8
10  
12  
14  
16  
18  
20  
0
10  
20  
30  
40  
50  
60  
70  
80  
RG - Ohms  
QG - NanoCoulombs  
Fig. 15. Reverse-Bias Safe Operating Area  
Fig. 16. Capacitance  
10,000  
1,000  
100  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
C
ies  
oes  
T
= 150ºC  
J
R
= 20  
Ω
G
C
dV / dT < 10V / ns  
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
50  
100  
150  
200  
250  
300  
350  
VCE - Volts  
VCE - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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