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IXFV30N60P

型号：

IXFV30N60P

描述：

PolarHVTM HiPerFET功率MOSFET N沟道增强模式[ PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

330 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFH 30N60P  
IXFT 30N60P  
IXFV 30N60P  
IXFV 30N60PS  
VDSS = 600  
ID25 = 30  
V
A
RDS(on) ≤ 240 mΩ  
≤ 200 ns  
N-Channel Enhancement Mode  
Fast Recovery Diode  
trr  
Avalanche Rated  
PLUS220 (IXFV)  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25° C to 150° C  
600  
600  
V
G
TJ = 25° C to 150° C; RGS = 1 MΩ  
V
D
S
D (TAB)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
PLUS220 SMD (IXFV...S)  
ID25  
IDM  
TC =25° C  
30  
80  
A
A
TC = 25° C, pulse width limited by TJM  
G
IAR  
TC =25° C  
30  
A
D (TAB)  
S
EAR  
EAS  
TC =25° C  
TC =25° C  
50  
mJ  
J
1.5  
TO-247 (IXFH)  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
20  
V/ns  
TC =25° C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D (TAB)  
D
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
TO-268 (IXFT)  
M
Mounting torque  
Mounting force  
(TO-247)  
(PLUS220)  
1.13/10 Nm/lb.in.  
FCd  
11..65/2.5..15  
N/lb.  
G
Weight  
TO-247  
TO-268  
PLUS220  
6
5
4
g
g
g
S
D (TAB)  
G = Gate  
D = Drain  
TAB = Drain  
S = Source  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 V, VDS = 0  
600  
V
V
Features  
2.5  
5.0  
l
Fast Recovery diode  
Unclamped Inductive Switching (UIS)  
rated  
l
100  
nA  
l
l
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
International standard packages  
Low package inductance  
- easy to drive and to protect  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
240 mΩ  
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %  
DS99316E(03/06)  
© 2006 IXYS All rights reserved  
IXFH 30N60P IXFT 30N60P  
IXFV 30N60P IXFV 30N60PS  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
15  
27  
S
Ciss  
Coss  
Crss  
4000  
430  
42  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
29  
20  
80  
25  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 ID25  
RG = 4 Ω (External)  
Qg(on)  
Qgs  
82  
28  
28  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCS  
0.25 ° C/W  
° C/W  
TO-247, PLUS220  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
Repetitive  
30  
80  
A
ISM  
A
V
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
trr  
IF = 25A, -di/dt = 100 A/µs  
200  
ns  
QRM  
VR = 100V, VGS = 0 V  
0.8  
µC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFH 30N60P IXFT 30N60P  
IXFV 30N60P IXFV 30N60PS  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
30  
27  
24  
21  
18  
15  
12  
9
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
8V  
V
= 10V  
8V  
GS  
GS  
7V  
7V  
6.5V  
6V  
6.5V  
6V  
5.5V  
5V  
6
5.5V  
5V  
3
0
0
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on Norm alized to ID = 15A  
)
@ 125  
º
C
Value vs. Junction Tem perature  
30  
27  
24  
21  
18  
15  
12  
9
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
5.5V  
I
= 30A  
D
I
= 15A  
D
5V  
6
3
0.7  
0.4  
4.5V  
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to  
ID = 15A Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Tem perature  
3
2.8  
2.6  
2.4  
2.2  
2
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
T = 125 C  
º
J
1.8  
1.6  
1.4  
1.2  
1
º
T = 25 C  
J
0
0.8  
-50  
-25  
0
25  
50  
75  
100 125 150  
5
10 15 20 25 30 35 40 45 50 55 60  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFH 30N60P IXFT 30N60P  
IXFV 30N60P IXFV 30N60PS  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
J
= -40 C  
º
25  
125  
º
C
º
C
T
J
= 125  
º
C
C
C
25  
º
º
-40  
0
0
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
7
0
5
10  
15  
20  
25  
30  
35  
40  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 300V  
DS  
I
I
= 15A  
D
G
= 10mA  
T = 125 C  
º
J
T = 25 C  
º
J
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Maxim um Transient Therm al  
Resistance  
Fig. 11. Capacitance  
10000  
1000  
100  
1.00  
0.10  
0.01  
f = 1MHz  
C
iss  
C
C
oss  
rss  
20  
10  
0.1  
1
10  
100  
1000  
5
10  
15  
25  
30  
35  
40  
VD S - Volts  
Pulse Width - milliseconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSREF:T_30N60P(7J)12-05-05-B.xls  
IXFH 30N60P IXFT 30N60P  
IXFV 30N60P IXFV 30N60PS  
Package Outline Drawings  
TO-247 AD Outline  
PLUS220 (IXFV) Outline  
1
2
3
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 (IXTT) Outline  
PLUS220SMD (IXFV_S) Outline  
© 2006 IXYS All rights reserved  
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