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IXYK120N120C3

型号：

IXYK120N120C3

描述：

1200V的IGBT XPTTM GenX3TM[ 1200V XPTTM IGBTs GenX3TM ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

214 K

下载PDF手册
Preliminary Technical Information  
1200V XPTTM IGBTs  
GenX3TM  
VCES = 1200V  
IC110 = 120A  
VCE(sat) ≤ 3.5V  
tfi(typ) = 90ns  
IXYK120N120C3  
IXYX120N120C3  
High-Speed IGBTs  
for 20-50 kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
1200  
1200  
V
V
Tab  
TJ = 25°C to 175°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
TC= 25°C (Chip Capability)  
220  
A
ILRMS  
IC110  
ICM  
Terminal Current Limit  
TC= 110°C  
160  
120  
A
A
G
TC = 25°C, 1ms  
660  
A
C
Tab  
E
IA  
EAS  
TC = 25°C  
TC = 25°C  
60  
2
A
J
G = Gate  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 1Ω  
ICM = 240  
A
C = Collector  
Tab = Collector  
(RBSOA)  
Clamped Inductive Load  
@VCE ≤ VCES  
PC  
TC = 25°C  
1500  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
z
Optimized for Low Switching Losses  
Square RBSOA  
International Standard Packages  
Positive Thermal Coefficient of  
Vce(sat)  
z
z
z
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
z
Avalanche Rated  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
High Current Handling Capability  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 500μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
z
25 μA  
z
TJ = 150°C  
TJ = 150°C  
1.5 mA  
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
z
z
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.9  
3.8  
3.5  
V
V
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100451A(03/13)  
IXYK120N120C3  
IXYX120N120C3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
40  
68  
S
Cies  
Coes  
Cres  
9810  
560  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
205  
Qg(on)  
Qge  
Qgc  
430  
76  
nC  
nC  
nC  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
200  
td(on)  
tri  
Eon  
td(off)  
tfi  
37  
70  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
6.2  
167  
90  
mJ  
ns  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
VCE = 0.5 • VCES, RG = 1Ω  
3
=
ns  
Note 2  
Eof  
4.2  
7.0  
mJ  
f
td(on)  
tri  
Eon  
td(off)  
tfi  
37  
62  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 100A, VGE = 15V  
10.0  
200  
120  
5.3  
mJ  
ns  
VCE = 0.5 • VCES, RG = 1Ω  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.10 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYK120N120C3  
IXYX120N120C3  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
240  
200  
160  
120  
80  
VGE = 15V  
12V  
300  
250  
200  
150  
100  
50  
VGE = 15V  
10V  
12V  
10V  
9V  
8V  
9V  
8V  
7V  
7V  
6V  
40  
6V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
240  
200  
160  
120  
80  
VGE = 15V  
VGE = 15V  
12V  
10V  
I C = 240A  
9V  
8V  
I C = 120A  
7V  
6V  
5V  
40  
I C = 60A  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
1
2
3
4
5
6
7
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
9
8
7
6
5
4
3
2
1
200  
180  
160  
140  
120  
100  
80  
TJ = 25ºC  
I C = 240A  
TJ = 150ºC  
25ºC  
120A  
60  
- 40ºC  
40  
20  
60A  
11  
0
6
7
8
9
10  
12  
13  
14  
15  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK120N120C3  
IXYX120N120C3  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
120  
100  
80  
60  
40  
20  
0
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
I
I
C = 120A  
G = 10mA  
25ºC  
150ºC  
6
4
2
0
0
50  
100  
150  
200  
250  
300  
350  
400  
450  
0
40  
80  
120  
160  
200  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
280  
240  
200  
160  
120  
80  
100,000  
10,000  
1,000  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 150ºC  
RG = 1  
Ω
40  
dv / dt < 10V / ns  
C
res  
0
100  
100  
300  
500  
700  
900  
1100  
1300  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYK120N120C3  
IXYX120N120C3  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
E
on - - - -  
7
6
5
4
3
2
1
13  
11  
9
9
8
7
6
5
4
3
2
1
0
13  
12  
11  
10  
9
E
E
on - - - -  
E
off  
off  
RG = 1  
TJ = 150ºC , VGE = 15V  
VCE = 600V  
VGE = 15V  
Ω ,  
VCE = 600V  
TJ = 150ºC  
I C = 100A  
7
8
TJ = 25ºC  
5
7
I C = 50A  
6
3
5
1
4
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
200  
180  
160  
140  
120  
100  
80  
800  
700  
600  
500  
400  
300  
200  
100  
8
7
6
5
4
3
2
1
14  
12  
10  
8
t f i  
t
d(off) - - - -  
E
E
on - - - -  
off  
TJ = 150ºC, VGE = 15V  
RG = 1  
VGE = 15V  
Ω ,  
VCE = 600V  
VCE = 600V  
I C = 100A  
I C = 50A  
6
I C = 100A  
4
I C = 50A  
2
0
60  
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
150  
140  
130  
120  
110  
100  
90  
280  
260  
240  
220  
200  
180  
160  
140  
120  
200  
180  
160  
140  
120  
100  
80  
280  
260  
240  
220  
200  
180  
160  
140  
tf i  
t
d(off) - - - -  
t f i  
td(off)  
- - - -  
RG = 1  
, VGE = 15V  
Ω
RG = 1  
,
VGE = 15V  
Ω
I C = 50A  
VCE = 600V  
VCE = 600V  
TJ = 150ºC  
I C = 100A  
TJ = 25ºC  
80  
60  
70  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYK120N120C3  
IXYX120N120C3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
90  
80  
70  
60  
50  
40  
30  
20  
40  
39  
38  
37  
36  
35  
34  
33  
140  
120  
100  
80  
80  
72  
64  
56  
48  
40  
32  
24  
tr i  
td(on) - - - -  
t r i  
td(on) - - - -  
TJ = 150ºC, VGE = 15V  
RG = 1  
, VGE = 15V  
Ω
VCE = 600V  
VCE = 600V  
TJ = 150ºC, 25ºC  
60  
I C = 100A  
40  
I C = 50A  
20  
0
1
2
3
4
5
6
7
8
9
10  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
100  
80  
60  
40  
20  
0
42  
40  
38  
36  
34  
32  
t r i  
td(on) - - - -  
RG = 1  
, VGE = 15V  
Ω
VCE = 600V  
I C = 100A  
I C = 50A  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_120N120C3(9P) 03-01-12  
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