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IXYH50N120C3D1

型号：

IXYH50N120C3D1

描述：

高速IGBT为20-50 kHz开关[ High-Speed IGBT for 20-50 kHz Switching ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

186 K

下载PDF手册
1200V XPTTM IGBT  
GenX3TM w/ Diode  
VCES = 1200V  
IC100 = 50A  
VCE(sat) ≤ 4.0V  
tfi(typ) = 43ns  
IXYH50N120C3D1  
High-Speed IGBT  
for 20-50 kHz Switching  
TO-247 AD  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
TJ = 25°C to 150°C, RGE = 1MΩ  
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
Tab  
=
E
IC25  
IC100  
IF110  
ICM  
TC = 25°C (Chip Capability)  
TC = 100°C  
TC = 110°C  
90  
50  
25  
A
A
A
A
G = Gate  
E = Emitter  
C
Collector  
Tab = Collector  
TC = 25°C, 1ms  
210  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 5Ω  
ICM = 100  
A
(RBSOA)  
Clamped Inductive Load  
@VCE ≤ VCES  
PC  
TC = 25°C  
625  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
z
Optimized for Low Switching Losses  
Square RBSOA  
Positive Thermal Coefficient of  
Vce(sat)  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
International Standard Package  
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
z
z
z
Md  
Mounting Torque  
1.13/10  
6
Nm/lb.in.  
g
Weight  
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Applications  
z
High Frequency Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
z
z
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
5.0  
z
z
50 μA  
z
TJ = 125°C  
TJ = 150°C  
500 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
4.0  
V
V
4.2  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS100388C(02/13)  
IXYH50N120C3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 (IXYH) Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
20  
32  
S
Cies  
Coes  
Cres  
3100  
230  
66  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg(on)  
Qge  
Qgc  
142  
23  
nC  
nC  
nC  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
60  
td(on)  
tri  
Eon  
td(off)  
tfi  
28  
62  
ns  
ns  
mJ  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
3.0  
133  
43  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VCE = 0.5 • VCES, RG = 5Ω  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Note 2  
Eof  
1.0  
1.7 mJ  
f
td(on)  
tri  
28  
68  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 150°C  
IC = 50A, VGE = 15V  
Eon  
td(off)  
tfi  
6.0  
160  
60  
mJ  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
VCE = 0.5 • VCES, RG = 5Ω  
ns  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Note 2  
.780 .800  
.177  
Eoff  
1.4  
mJ  
∅P 3.55  
3.65  
.140 .144  
RthJC  
RthCS  
0.20 °C/W  
°C/W  
Q
5.89  
6.40 0.232 0.252  
0.21  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
(TJ = 25°C, Unless Otherwise Specified)  
Characteristic Value  
Symbol  
Test Conditions  
Min. Typ.  
Max.  
VF  
3.00  
V
V
IF = 30A,VGE = 0V, Note 1  
TJ = 150°C  
1.75  
IRM  
trr  
9
A
IF = 30A,VGE = 0V, -diF/dt = 100A/μs, TJ = 100°C  
195  
ns  
VR = 600V  
TJ = 100°C  
RthJC  
0.90 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYH50N120C3D1  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
Fig. 1. Output Characteristics @ TJ = 25ºC  
250  
200  
150  
100  
50  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGE = 15V  
14V  
VGE = 15V  
13V  
11V  
10V  
13V  
12V  
9V  
11V  
10V  
8V  
9V  
8V  
7V  
6V  
7V  
6V  
0
0
0
6
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
0
5
10  
15  
20  
25  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
VGE = 15V  
13V  
12V  
11V  
10V  
I C = 100A  
9V  
I C = 50A  
8V  
7V  
I C = 25A  
6V  
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
1
2
3
4
5
6
7
8
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
8.5  
7.5  
6.5  
5.5  
4.5  
3.5  
2.5  
1.5  
TJ = 25ºC  
I C = 100A  
50A  
TJ = 150ºC  
25ºC  
- 40ºC  
25A  
11  
7
8
9
10  
12  
13  
14  
15  
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5  
VGE - Volts  
VGE - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYH50N120C3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 600V  
C = 50A  
I G = 10mA  
I
25ºC  
150ºC  
6
4
2
4
0
0
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
0
20  
40  
60  
80  
100  
120  
140  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
100  
80  
60  
40  
20  
0
C
ies  
C
oes  
TJ = 150ºC  
RG = 5  
C
res  
Ω
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
200  
400  
600  
800  
1000  
1200  
0
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYH50N120C3D1  
Fig. 12. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 13. Inductive Switching Energy Loss vs.  
Collector Current  
E
on - - - -  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
21  
18  
15  
12  
9
6
5
4
3
2
1
0
30  
25  
20  
15  
10  
5
E
E
on - - - -  
E
off  
off  
RG = 5  
TJ = 150ºC , VGE = 15V  
VCE = 600V  
VGE = 15V  
Ω ,  
VCE = 600V  
I C = 100A  
TJ = 150ºC  
TJ = 25ºC  
6
I C = 50A  
3
0
0
20  
30  
40  
50  
60  
70  
80  
90  
100  
5
10  
15  
20  
25  
30  
RG - Ohms  
IC - Amperes  
Fig. 15. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Junction Temperature  
140  
120  
100  
80  
600  
500  
400  
300  
200  
100  
0
5
20  
E
E
on - - - -  
t f i  
td(off)  
- - - -  
off  
RG = 5  
VGE = 15V  
TJ = 150ºC, VGE = 15V  
Ω ,  
4
3
2
1
0
16  
12  
8
VCE = 600V  
VCE = 600V  
I C = 100A  
I C = 100A  
I C = 50A  
60  
4
I C = 50A  
40  
0
20  
25  
50  
75  
100  
125  
150  
5
10  
15  
20  
25  
30  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Collector Current  
160  
140  
120  
100  
80  
180  
170  
160  
150  
140  
130  
120  
110  
160  
140  
120  
100  
80  
240  
t f i  
t
d(off) - - - -  
t f i  
td(off)  
- - - -  
220  
200  
180  
160  
140  
120  
100  
80  
RG = 5  
, VGE = 15V  
Ω
RG = 5  
,
VGE = 15V  
Ω
VCE = 600V  
VCE = 600V  
TJ = 125ºC  
I C = 100A  
60  
I C = 50A  
60  
TJ = 25ºC  
40  
40  
20  
20  
0
25  
50  
75  
100  
125  
150  
20  
30  
40  
50  
60  
70  
80  
90  
100  
IC - Amperes  
TJ - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYH50N120C3D1  
Fig. 19. Inductive Turn-on Switching Times vs.  
Fig. 18. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
240  
200  
160  
120  
80  
44  
350  
300  
250  
200  
150  
100  
50  
85  
75  
65  
55  
45  
35  
25  
15  
t r i  
td(on)  
- - - -  
t r i  
td(on) - - - -  
40  
36  
32  
28  
24  
20  
RG = 5  
,
VGE = 15V  
Ω
TJ = 150ºC, VGE = 15V  
I C = 100A  
VCE = 600V  
VCE = 600V  
TJ = 150ºC, 25ºC  
I C = 50A  
40  
0
0
20  
30  
40  
50  
60  
70  
80  
90  
100  
5
10  
15  
20  
25  
30  
RG - Ohms  
IC - Amperes  
Fig. 20. Inductive Turn-on Switching Times vs.  
Junction Temperature  
240  
200  
160  
120  
80  
44  
40  
36  
32  
28  
24  
20  
tr i  
td(on) - - - -  
RG = 5  
, VGE = 15V  
Ω
VCE = 600V  
I C = 100A  
I C = 50A  
40  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
Fig. 21. Maximum Transient Thermal Impedance (Diode)  
1
0.1  
0.01  
0.001  
0.0001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Second  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_50N120C3D1(6N)05-04-12  
IXYH50N120C3D1  
Fig. 22. Forward Current IF vs VF  
Fig. 23. Reverse Recovery Charge QRM vs. -diF/dt  
5
4
3
2
1
0
70  
60  
50  
40  
30  
20  
10  
0
TVJ = 100ºC  
VR = 600V  
IF = 60A  
TVJ = 150ºC  
100ºC  
25ºC  
IF  
QRM  
[µC]  
[A]  
30A  
15A  
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
100  
1000  
500  
VF [V]  
-diF/dt [A/µs]  
Fig. 24. Peak Reverse Current IRM vs. -diF/dt  
Fig. 25. Dynamic Parameters QRM, IRM vs. TVJ  
60  
50  
40  
30  
20  
10  
0
2
1.5  
1
TVJ = 100ºC  
VR = 600V  
IF = 60A, 30A, 15A  
IRM  
[A]  
IRM  
0.5  
0
QRM  
20  
40  
60  
80  
TVJ [ºC]  
100  
120  
140  
160  
200  
400  
600  
800  
1000  
-diF/dt [A/µs]  
Fig. 26. Recovery Time trr vs. -diF/dt  
Fig. 27. Peak Forward Voltage VFR, trr vs -diF/dt  
220  
200  
180  
160  
140  
120  
120  
1.2  
TVJ = 100ºC  
IF = 30A  
TVJ = 100ºC  
VR = 600V  
100  
80  
60  
40  
20  
0
1
trr  
0.8  
0.6  
0.4  
0.2  
0
t
rr  
[ns]  
IF = 60A  
VFR  
[V]  
t
rr  
30A  
15A  
[µs]  
VFR  
200  
400  
600  
800  
1000  
0
100  
200  
300  
400  
500  
600  
700  
800  
900 1000  
-diF/dt [A/µs]  
-diF/dt [A/µs]  
© 2013 IXYS CORPORATION, All Rights Reserved  
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