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IXGT40N60C2D1

型号：

IXGT40N60C2D1

描述：

HiPerFASTTM的IGBT W /二极管[ HiPerFASTTM IGBTs w/ Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

175 K

下载PDF手册
HiPerFASTTM IGBTs  
w/ Diode  
VCES = 600V  
IC110 = 40A  
VCE(SAT) ≤ 2.7V  
tfi(typ) = 32ns  
IXGT40N60C2D1  
IXGJ40N60C2D1  
IXGH40N60C2D1  
C2-Class High Speed IGBTs  
TO-268 (IXGT)  
G
E
C (Tab)  
Symbol  
Test Conditions  
Maximum Ratings  
TO-268 (IXGJ)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
TC = 25°C ( Limited by Lead)  
TC = 110°C  
75  
40  
A
A
C (Tab)  
ICM  
TC = 25°C, 1ms  
200  
A
TO-247 (IXGH)  
SSOA  
VGE= 15V, TJ = 125°C, RG = 10Ω  
ICM = 80  
A
(RBSOA)  
Clamped Inductive Load  
VCE ≤ VCES  
PC  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
G
C
C (Tab)  
E
-55 ... +150  
G = Gate  
E = Emitter  
C
= Collector  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Tab = Collector  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
z Very High Frequency IGBT  
z Square RBSOA  
z High Current Handling Capability  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
z Uninterruptible Power Supplies (UPS)  
z Switch-Mode and Resonant-Mode  
Power Supplies  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
z AC Motor Speed Control  
z DC Servo and Robot Drives  
z DC Choppers  
VCE = VCES, VGE= 0V  
200 μA  
mA  
±100 nA  
TJ = 125°C  
TJ = 125°C  
3
IGES  
VCE = 0V, VGE = ±20V  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
2.2  
1.7  
2.7  
V
V
Advantages  
z High Power Density  
z Very Fast Switching Speeds for High  
Frequency Applications  
z High Power Surface Mountable  
Packages  
DS99041F(11/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGT40N60C2D1 IXGJ40N60C2D1  
IXGH40N60C2D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-247 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 30A, VCE = 10V, Note 1  
20  
36  
S
Cies  
Coes  
Cres  
2500  
220  
54  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
∅ P  
1
2
3
Qg  
Qge  
Qgc  
95  
14  
36  
nC  
nC  
nC  
IC = 30A, VGE = 15V, VCE = 0.5 • VCES  
td(on)  
tri  
td(off)  
tfi  
18  
20  
ns  
ns  
e
Inductive load, TJ = 25°C  
IC = 30A, VGE = 15V  
1 = Gate 2 = Collector  
3 = Emitter  
90  
32  
140 ns  
ns  
VCE = 400V, RG = 3Ω  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Note 2  
Eoff  
0.20  
0.37 mJ  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
Eon  
td(off)  
tfi  
18  
20  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Inductive load, TJ = 125°C  
IC = 30A, VGE = 15V  
0.60  
130  
80  
mJ  
ns  
VCE = 400V, RG = 3Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
ns  
Note 2  
Eoff  
0.50  
mJ  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
RthJC  
RthCS  
0.42 °C/W  
°C/W  
TO-247 & TO-268  
0.25  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
TO-268 Leaded Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
VF  
IF = 30A, VGE = 0V, Note 1  
2.5  
V
V
TJ = 150°C  
1.6  
IRM  
trr  
TJ = 100°C  
TJ = 100°C  
4
A
ns  
ns  
IF = 30A, VGE = 0V, -diF/dt = 100A/μs,  
VR = 100V  
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V  
100  
25  
RthJC  
0.9 °C/W  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
1 = Gate 2,4 = Collector  
3 = Emitter  
TO-268 Outline  
1 = Gate 2,4 = Collector  
3 = Emitter  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGT40N60C2D1 IXGJ40N60C2D1  
IXGH40N60C2D1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
60  
50  
40  
30  
20  
10  
210  
VG E = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
18 0  
15 0  
12 0  
90  
60  
30  
0
9V  
7V  
7V  
5V  
5V  
0
0.5  
0.5  
5
1
1.5  
2
2.5  
3
3.5  
0
1
2
3
4
VC E - Volts  
5
6
7
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
60  
50  
40  
30  
20  
10  
1. 3  
1. 2  
1. 1  
1
VG E = 15V  
13V  
11V  
9V  
I C = 60A  
VG E = 15V  
7V  
0.9  
0.8  
0.7  
0.6  
I C = 30A  
I C = 15A  
5V  
0
1
1.5  
2
2.5  
3
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
4
3.5  
3
210  
18 0  
15 0  
12 0  
90  
60  
30  
0
º
T J = 25 C  
2.5  
2
I C = 60A  
º
º
º
C
TJ= 125 C  
30A  
1 5 A  
25 C  
1. 5  
-40  
1
6
7
8
9
10  
11 12 13  
14 15  
4
5
6
7
8
9
10  
VG E - Volts  
VG E - Volts  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGT40N60C2D1 IXGJ40N60C2D1  
IXGH40N60C2D1  
Fig. 7. Transconductance  
Fig. 8. Dependence of Eoff on RG  
70  
60  
50  
40  
30  
20  
10  
1.8  
1.6  
º
I C = 60A  
TJ = -40 C  
º
TJ = 125 C  
VG E = 15V  
VC E = 400V  
1.4  
1.2  
º
25 C  
º
125 C  
1
I C= 45A  
0.8  
0.6  
0.4  
0.2  
0
I C = 30A  
I C= 15A  
0
0
10  
0
30  
60  
90  
120  
150  
180  
2
4
6
8
10  
R G - Ohms  
12  
14  
16  
I C - Amperes  
Fig. 10. Dependence of Eoff on Temperature  
Fig. 9. Dependence of Eoff on IC  
1. 6  
1. 4  
1. 2  
1. 6  
1. 4  
1. 2  
1
RG = 3 Ohms  
RG = 10 Ohms  
RG = 3 Ohms  
RG= 10 Ohms  
- - - - -  
- - - - -  
I C = 60A  
VG E = 15V  
VC E = 400V  
VGE = 15V  
VCE = 400V  
1
I C = 45A  
0.8  
0.6  
0.4  
0.2  
0
0.8  
0.6  
0.4  
0.2  
0
º
TJ = 125 C  
I C = 30A  
I C = 15A  
º
TJ = 25 C  
25  
50  
75  
100  
125  
20  
30 40  
I C - Amperes  
50  
60  
TJ - Degrees Centigrade  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
15  
12  
9
10000  
10 0 0  
10 0  
f = 1MHz  
VC E = 300V  
I C = 30A  
I G = 10mA  
C
ies  
C
oes  
res  
6
3
C
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
20  
40  
60  
80  
100  
VC E - Volts  
Q G - nanoCoulombs  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXGT40N60C2D1 IXGJ40N60C2D1  
IXGH40N60C2D1  
Fig. 13. MaximumTransient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXGT40N60C2D1 IXGJ40N60C2D1  
IXGH40N60C2D1  
60  
A
1000  
nC  
30  
TVJ= 100°C  
VR = 300V  
TVJ= 100°C  
VR = 300V  
A
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
Qr  
IF  
20  
15  
10  
5
IF= 60A  
IF= 30A  
IF= 15A  
600  
400  
200  
0
TVJ=150°C  
TVJ=100°C  
TVJ=25°C  
0
A/μs  
1000  
-diF/dt  
0
1
2
3 V  
100  
1000  
0
200  
400  
600  
A/μs  
-diF/dt  
VF  
Fig. 15. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 16. Peak reverse current IRM  
versus -diF/dt  
Fig. 14. Forward current IF versus VF  
2.0  
90  
20  
1.00  
TVJ= 100°C  
IF = 30A  
TVJ= 100°C  
VR = 300V  
V
μs  
ns  
VFR  
tfr  
trr  
1.5  
15  
10  
5
0.75  
0.50  
0.25  
0.
tfr  
Kf  
IF= 60A  
80  
IF= 30A  
IF= 15A  
VFR  
1.0  
0.5  
0.0  
IRM  
70  
60  
Qr  
0
A/μs  
1000  
0
40  
80  
120  
160  
0
200  
400  
600  
01000  
A/μs  
0
200  
400  
600  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 19. Peak forward voltage VFR  
and tfr versus diF/dt  
Fig. 17. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 18. Recovery time trr versus  
-diF/dt  
1
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
0.1  
ZthJC  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 20. Transient thermal resistance junction to case  
IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: G_40N60C2(5Y)12-11-06-B  
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