Preliminary
XVT9003-1
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Excellent Frequency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.2 mm Surface-mount Case
19.200000 MHz
VCTCXO
• Complies with Directive 2002/95/EC (RoHS) Pb
SM3225-4 Case
Electrical Characteristics
Characteristic
Sym
Notes
Minimum
Typical
Maximum
Units
MHz
°C
Nominal Frequency
fo
19.200000
Component Storage Temperature Range
Storage Temperature Range in Tape and Reel
Soldering Profile, 10 seconds, up to 5 cycles
Operating Temperature Range
Power Supply Voltage
-55
-40
+125
+85
260
°C
°C
-40
3.14
0.8
+85
3.46
°C
Vcc
3.30
V
V
Output Voltage with Load 10 pF||10 KΩ
Vout
P-P
Output Waveform
clipped sinewave
1.5±1.0
Power Supply Current
Icc
2.0
mA
V
Control Voltage
Vcon
Control Voltage Input Impedance
Frequency Tolerance, Single Solder Reflow, Vcontrol = 1.50 V
Frequency Stability versus:
100K
ohms
±2.0 ppm max @ 25 °C ±2 °C
Temperature, -40 to 85 °C
±1.0
±0.2
±0.2
ppm
ppm
Supply Voltage, 3.14 to 3.46 V
Load 10 pF||10 KΩ ±10%
ppm
Control Voltage Frequency Range (1.5 ±1.0 V)
±8
ppm/V
ms
Start Up Time, 90% of final RF level in V
2.0
P-P
Aging @ 25 °C
±1
ppm/year
dBc
Harmonics
-5.0
SSB Phase Noise @ 1 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
-130
dBc/Hz
units
1000
9003-1/YWWS
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1.
The design, manufacturing process, and specifications of this device are subject to change without notice.
www.RFM.com E-mail: info@rfm.com
©2009-2010 by RF Monolithics, Inc.
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