RoHS
RoHS
MXG50/MXY50 Series
SEMICONDUCTOR
Nell High Power Products
MAJOR RATINGS AND CHARACTERISTICS (TA = 25°C unless otherwise noted)
MXG50/MXY50
PARAMETER
UNIT
SYMBOL
08
10
12
800
1000
1100
1000
50
1200
VRRM
VRSM
Maximum repetitive peak reverse voltage
Peak reverse non-repetitive voltage
V
900
800
1300
1200
V
V
A
Maximum DC blocking voltage
VDC
IF(AV)
Maximum average forward rectified output current
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
450
Rating (non-repetitive, for t greater than 1 ms and less than 8.3 ms)
for fusing
A2s
I2t
1012
VISO
TJ
RMS isolation voltage from case to leads
Operating junction storage temperature range
Storage temperature range
2500
V
-40 to 150
ºC
ºC
Tstg
-40 to 125
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
MXG50/MXY50
TEST
CONDITIONS
PARAMETER
UNIT
SYMBOL
08
10
1.30
5
12
IF = 157A
VF
IR
Maximum instantaneous forward drop per diode
V
Maximum reverse DC current at rated DC blocking
voltage per diod
TA = 25°C
µA
TA = 150°C
mA
3
THERMAL AND MECHANICAC (TA = 25°C unless otherwise noted)
MXG50/MXY50
10
UNIT
PARAMETER
TEST CONDITIONS
SYMBOL
08
12
Typical thermal resistance
junction to case
Single-side heat dissipation, sine
half wave
(1)
RθJC
1.0
°C/W
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound.
Mounting
torque(2)
Nm
g
2.0 to 2.5
Approximate weight
Notes
120
(1) With heatsink, single side heat dissipation, half sine wave.
(2) M5 & M6 screws.
Device code
MXG 50
12
1
2
3
-
MXG = for common anode
MXY = for common cathode
1
-
-
IF(AV) rating: "50" for 50A
Voltage code: code x 100 = VRRM
2
3
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