PZTA27
NPN Transistor
Elektronische Bauelemente
Epitaxial Planar Transistor
RoHS Compliant Product
SOT-223
Description
The PZTA27 is designed for darlington
amplifier high current gain collector
current to 500mA.
Millimeter
Millimeter
Min. Max.
13̓TYP.
REF.
REF.
Min.
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
6.70
2.90
0.02
0̓
B
J
2.30 REF.
A 2 7
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
Date Code
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
o
Ta=25
MAXIMUM RATINGS
ABSOLUTE
Symbol
C
Parameter
Value
Units
VCBO
Collector-Base Voltage
60
60
10
V
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
mA
500
2
W
Total Power Dissipation
PD
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
V
t
Parameter
Symbol
BVCBO
BVCES
BVEBO
Min
60
60
10
-
Max
Test Conditions
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC= 100µA,IE=0
-
-
-
-
-
-
IC=
100µA,VBE=0
V
V
IE= 10µA,IC=0
VCB=50V,IE=0
VEB=10V,IC=0
VCE=50V
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Base Cutoff Current
-
ICBO
IEBO
ICES
nA
100
100
-
-
-
nA
nA
-
0
50
-
-
-
-
-
1.5
Collector Saturation Voltage
Base Satruation Voltage
VCE(sat)
VBE(sat)
hFE1
IC=100mA,IB=0.1mA
IC=100mA,VCE=5V
VCE= 5V, IC=10mA
VCE= 5V, IC=100mA
V
V
2
-
-
10K
10K
DC Current Gain
-
hFE2
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
Page 1 of 2
01-Jun-2002 Rev. A
