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IXGX120N60C2

型号：

IXGX120N60C2

描述：

HiPerFAST IGBT光速2系列[ HiPerFAST IGBT Lightspeed 2 Series ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

193 K

下载PDF手册
Preliminary Technical Information  
HiPerFASTTM IGBT  
VCES = 600V  
IC110 = 120A  
VCE(sat) ≤ 2.5V  
IXGK120N60C2  
IXGX120N60C2  
Lightspeed 2TM Series  
tfi(typ)  
= 80ns  
TO-264(IXGK)  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
C
E
(TAB)  
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C (chip capability)  
TC = 25°C, 1ms  
75  
120  
500  
A
A
A
PLUS247(IXGX)  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 1Ω  
ICM = 200  
A
(RBSOA)  
Clamped inductive load @ VCE ≤ 600V  
PC  
TC = 25°C  
830  
W
G
C
E
(TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
C = Collector  
TAB = Collector  
-55 ... +150  
E = Emitter  
Md  
FC  
Mounting torque (TO-264)  
Mounting force (PLUS247)  
1.13 / 10  
Nm/lb.in  
N/lb  
20..120/4.5..27  
Features  
z Very high frequency IGBT  
z Square RBSOA  
z High current handling capability  
z MOS Gate turn-on  
TL  
Maximum lead temperature for soldering  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
TSOLD  
Weight  
TO-264  
PLUS247  
10  
6
g
g
- drive simplicity  
Applications  
z Uninterruptible power supplies (UPS)  
z Switched-mode and resonant-mode  
power supplies  
z AC motor speed control  
z DC servo and robot drives  
z DC choppers  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
BVCES  
VGE(th)  
IC = 1mA, VGE = 0V  
600  
3.0  
V
V
Advantages  
IC = 500μA, VCE = VGE  
5.5  
z High power density  
z Very fast switching speeds for high  
frequency applications  
z High power surface mountable  
packages  
ICES  
VCE = VCES  
VGE = 0V  
100 μA  
2 mA  
TJ = 125°C  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ± 20V  
± 200 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
2.1  
1.6  
2.5  
V
V
DS99515A(11/07)  
© 2007 IXYS CORPORATION,All rights reserved  
IXGK120N60C2  
IXGX120N60C2  
Symbol  
Test Conditions  
Characteristic Values  
TO-264 AA (IXGK) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
50  
78  
S
Cies  
Coes  
Cres  
14.6  
820  
280  
nF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
370  
85  
nC  
nC  
nC  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
Pins:1-Gate 2- Drain  
3 - Source Tab - Drain  
Qgc  
155  
td(on)  
tri  
40  
60  
ns  
ns  
Millimeter  
Inches  
Dim.  
Min.  
Max.  
Min.  
Max.  
Inductive load, TJ = 25°C  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Eon  
td(off)  
tfi  
1.7  
120  
80  
mJ  
ns  
IC = 80A, VGE = 15V  
180  
1.8  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VCE = 400V, RG = 1Ω  
ns  
c
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
Eoff  
1.0  
mJ  
D
25.91 26.16  
E
e
J
19.81 19.96  
5.46 BSC  
td(on)  
tri  
40  
60  
ns  
ns  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
Inductive load, TJ = 125°C  
K
Eon  
td(off)  
tfi  
2.1  
mJ  
ns  
L
L1  
P
20.32 20.83  
.800  
.090  
.820  
.102  
IC = 80A, VGE = 15V  
2.29  
2.59  
165  
92  
3.17  
3.66  
.125  
.144  
V
CE = 400V, RG = 1Ω  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
ns  
Eoff  
1.24  
mJ  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
RthJC  
RthJC  
0.15 °C/W  
°C/W  
0.15  
PLUS 247TM (IXGX) Outline  
Note:1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
4 - Drain (Collector)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMINARY TECHNICAL INFORMATION  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXGK120N60C2  
IXGX120N60C2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
350  
300  
250  
200  
150  
100  
50  
VGE = 15V  
13V  
11V  
VGE = 15V  
13V  
11V  
9V  
9V  
8V  
8V  
7V  
60  
40  
7V  
4
20  
0
0
0
0.3  
0.6  
0.9  
1.2  
1.5  
1.8  
2.1  
2.4  
2.7  
3
0
1
2
3
5
6
7
8
9
10  
150  
9
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
200  
180  
160  
140  
120  
100  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGE = 15V  
13V  
11V  
VGE = 15V  
9V  
8V  
I C = 200A  
I C = 100A  
60  
7V  
40  
20  
I C = 50A  
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6  
VCE - Volts  
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
140  
120  
100  
80  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
60  
I C = 200A  
100A  
40  
20  
50A  
0
7
8
9
10  
11  
12  
13  
14  
15  
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
VGE - Volts  
VGE - Volts  
© 2007 IXYS CORPORATION,All rights reserved  
IXGK120N60C2  
IXGX120N60C2  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
140  
120  
100  
80  
16  
14  
12  
10  
8
TJ = - 40ºC  
VCE = 300V  
C = 100A  
I G = 10mA  
I
25ºC  
125ºC  
60  
6
40  
4
20  
2
0
0
0
50  
100  
150  
200  
250  
300  
350  
400  
700  
10  
0
20  
40  
60  
80  
100  
120  
140  
160  
QG - NanoCoulombs  
IC - Amperes  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
220  
200  
180  
160  
140  
120  
100  
80  
100.0  
10.0  
1.0  
= 1 MHz  
f
C
ies  
C
oes  
TJ = 125ºC  
60  
RG = 1  
Ω
dv / dt < 10V / ns  
40  
C
20  
res  
0.1  
0
0
5
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
400  
500  
600  
VCE - Volts  
VCE - Volts  
Fig. 11. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGK120N60C2  
IXGX120N60C2  
Fig. 12. Inductive Switching  
Energy Loss vs. Gate Resistance  
Fig. 13. Inductive Swiching  
Energy Loss vs. Collector Current  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
E
E
on - - - -  
off  
RG = 1  
E
E
on - - - -  
TJ = 125ºC , VGE = 15V  
VCE = 400V  
off  
VGE = 15V  
Ω ,  
VCE = 400V  
TJ = 125ºC, 25ºC  
I C = 120A  
I C = 80A  
40  
50  
60  
70  
80  
90  
100  
110  
120  
1
2
3
4
5
6
7
8
9
10  
IC - Amperes  
RG - Ohms  
Fig. 14. Inductive Swiching  
Energy Loss vs. Junction Temperature  
Fig. 15. Inductive Turn-off  
Switching Times vs. Gate Resistance  
240  
220  
200  
180  
160  
140  
120  
100  
80  
500  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
4.5  
t f  
td(off)  
- - - -  
V
GE = 15V  
450  
400  
350  
300  
250  
200  
150  
100  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
TJ = 125ºC,  
CE = 400V  
V
I C = 120A  
E
E
on - - - -  
VGE = 15V  
,
off  
I C = 120A  
RG = 1  
Ω
VCE = 400V  
I C = 80A  
I C = 80A  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Inductive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 16. Inductive Turn-off  
Switching Times vs. Collector Current  
200  
175  
150  
125  
100  
75  
180  
220  
200  
180  
160  
140  
120  
100  
80  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
100  
t f  
td(off) - - - -  
tf  
td(off)  
- - - -  
170  
160  
150  
140  
130  
120  
110  
RG = 1 , VGE = 15V  
Ω
RG = 1Ω , VGE = 15V  
CE = 400V  
VCE = 400V  
V
I C = 120A  
TJ = 125ºC  
60  
TJ = 25ºC  
I
= 80A  
C
40  
50  
20  
0
25  
40  
50  
60  
70  
80  
90  
100  
110  
120  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
IC - Amperes  
TJ - Degrees Centigrade  
© 2007 IXYS CORPORATION,All rights reserved  
IXGK120N60C2  
IXGX120N60C2  
Fig. 19. Inductive Turn-on  
Switching Times vs. Collector Current  
Fig. 18. Inductive Turn-on  
Switching Times vs. Gate Resistance  
120  
110  
100  
90  
52  
50  
48  
46  
44  
42  
40  
38  
36  
34  
32  
180  
160  
140  
120  
100  
80  
100  
90  
80  
70  
60  
50  
40  
30  
tr  
td(on)  
tr  
td(on) - - - -  
- - - -  
TJ = 125ºC, VGE = 15V  
VCE = 400V  
RG = 1 , VGE = 15V  
Ω
VCE = 400V  
I C = 120A  
80  
70  
TJ = 25ºC  
I C = 80A  
60  
50  
TJ = 125ºC  
40  
60  
30  
40  
20  
1
2
3
4
5
6
7
8
9
10  
40  
50  
60  
70  
80  
90  
100  
110  
120  
IC - Amperes  
RG - Ohms  
Fig. 20. Inductive Turn-on  
Switching Times vs. Junction Temperature  
120  
110  
100  
90  
50  
48  
46  
44  
42  
40  
38  
36  
I C = 120A  
tr  
td(on) - - - -  
RG = 1 , VGE = 15V  
Ω
VCE = 400V  
80  
70  
60  
I C = 80A  
50  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
TJ - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: G_120N60C2(9D)11-06-07  
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