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IXGT10N170A

型号：

IXGT10N170A

描述：

高压IGBT[ High Voltage IGBT ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

571 K

下载PDF手册
IXGH 10N170A  
IXGT 10N170A  
VCES  
IC25  
= 1700 V  
10 A  
High Voltage  
IGBT  
=
VCE(sat) = 6.0 V  
tfi(typ)  
=
35 ns  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
C (TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
10  
5
20  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 22Ω  
I
= 20  
A
CGlaE mped inductive load  
@ 0C.8M VCES  
TAB)  
(RBSOA)  
G
C
E
tSC  
TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 22Ω  
10  
µs  
G = Gate,  
C = Collector,  
TAB = Collector  
E=Emitter,  
PC  
TC = 25°C  
140  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
International standard packages  
JEDEC TO-268 and  
JEDEC TO-247 AD  
Md  
Mounting torque (M3)  
(TO-247)  
1.13/10Nm/lb.in.  
300 °C  
z
z
z
High current handling capability  
Veryhighfrequency  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
MOS Gate turn-on  
- drive simplicity  
Weight  
TO-247  
TO-268  
6
4
g
z
z
Rugged NPT structure  
Molding epoxies meet UL 94 V-0  
flammability classification  
g
Applications  
z
Pulser circuits  
Symbol  
TestConditions  
Characteristic Values  
z
AC motor speed control  
(TJ = 25°C, unless otherwise specified)  
z
min. typ. max.  
DC servo and robot drives  
z
DC choppers  
z
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1700  
3.0  
V
Uninterruptible power supplies (UPS)  
ICC = 250 µA, V = VGE  
5.0  
V
z
CE  
Switched-mode and resonant-mode  
power supplies  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
25  
µA  
µA  
Note 1 TJJ = 125°C  
500  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100  
6.0  
nA  
z
High power density  
z
VCE(sat)  
T = 25°C  
TJJ = 125°C  
4.5  
5.2  
V
V
Suitable for surface mounting  
Easy to mount with 1 screw,  
z
(isolated mounting screw hole)  
DS98991B(11/03)  
© 2003 IXYS All rights reserved  
IXGH 10N170A  
IXGT 10N170A  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = I ; VCE = 20 V  
Note 2 C25  
3
5
S
∅ P  
Cies  
Coes  
Cres  
650  
40  
22  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
QG  
QGE  
QGC  
29  
5
10  
nC  
nC  
nC  
e
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
A12  
4.7  
2.2  
2.2  
1.0  
1.65  
2.87  
5.3  
2.54  
2.6  
1.4  
2.13  
3.12  
.185 .209  
.087 .102  
.059 .098  
.040 .055  
.065 .084  
.113 .123  
.016 .031  
.819 .845  
.610 .640  
td(on)  
tri  
td(off)  
tfi  
46  
57  
190  
35  
ns  
ns  
360 ns  
ns  
A
Inductive load, TJ = 25°C  
IC = IC25, VGE = 15 V  
RG = 22 Ω, VCE = 0.5 VCES  
b
b
b12  
C
D
E
.4  
.8  
Eoff  
0.38  
0.8 mJ  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
48  
59  
ns  
ns  
mJ  
ns  
L1  
Inductive load, TJ = 125°C  
IC = IC25, VGE = 15 V  
RG = 22 Ω, VCE = 0.5 VCES  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
4.32  
6.40 0.232 0.252  
Eon  
1.2  
R
S
5.49  
.170 .216  
242 BSC  
td(off)  
200  
6.15 BSC  
tfi  
40  
ns  
Eoff  
0.6  
mJ  
TO-268 Outline  
RthJC  
RthCK  
0.89 K/W  
K/W  
(TO-247)  
0.25  
Notes:1. Device must be heatsunk for high temperature leakage current  
measurements to avoid thermal runaway.  
2. Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
A1  
A2  
b
1.15  
1.9  
.4  
1.45  
.045 .057  
b2  
2.1  
.75  
.83  
C
.65  
.016 .026  
D
E
13.80 14.00  
.543 .551  
.624 .632  
.524 .535  
15.85 16.05  
E1  
13.3  
13.6  
e
H
L
5.45 BSC  
.215 BSC  
.736 .752  
.094 .106  
18.70 19.10  
2.40  
1.20  
2.70  
1.40  
L1  
.047 .055  
L2  
L3  
L4  
1.00  
1.15  
.039 .045  
.010 BSC  
0.25 BSC  
3.80  
4.10  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXGH 10N170A  
IXGT 10N170A  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
10  
9
8
7
6
5
4
3
2
40  
35  
30  
25  
20  
15  
10  
5
VG E = 17V  
15V  
VG E = 17V  
9V  
15V  
13V  
13V  
11V  
7V  
1 1V  
9V  
1
7V  
25  
0
0
1
2
3
4
5
6
7
8
9
0
5
10  
15  
20  
30  
VCE - Volts  
VCE - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Temperature Dependence of VCE(sat)  
2.6  
2.4  
2.2  
2
10  
9
8
7
6
5
4
3
2
VG E = 17V  
15V  
VG E = 15V  
13V  
9V  
7V  
11V  
I C = 10A  
1. 8  
1. 6  
1. 4  
1. 2  
I C= 5A  
I C= 2.5A  
1
1
0.8  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
15  
12 . 5  
10  
12  
11  
10  
9
TJ = 25 C  
º
8
I C = 10A  
7.5  
5
7
6
TJ= 125  
25  
-40  
º
C
5A  
5
º
C
2.5  
0
º
C
4
2.5A  
3
5
6
7
8
9
10  
11 12  
13 14  
15  
4
5
6
7
8
9
VGE - Volts  
VGE - Volts  
© 2003 IXYS All rights reserved  
IXGH 10N170A  
IXGT 10N170A  
Fig. 8. Dependence of Eoff on RG  
Fig. 7. Transconductance  
8
7
6
5
4
3
2
1.3  
1.2  
1.1  
TJ = -40  
º
C
C
º
TJ = 125 C  
G E = 15V  
C E = 1360V  
V
V
25  
º
I C = 20A  
º
125 C  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
I C = 10A  
I C = 5A  
1
0
0
4
0
2 . 5  
5
7 . 5  
10  
12 . 5  
15  
2 0  
3 0  
0
20  
40  
60  
80  
100  
120  
140  
R G - Ohms  
I C - Amperes  
Fig. 9. Dependence of Eoff on IC  
Fig. 10. Dependence of Eoff on Temperature  
1. 6  
1. 4  
1. 2  
1
1. 4  
1. 3  
1. 2  
1. 1  
1
Solid lines - RG = 120 Ohms  
Dashed lines - RG = 20 Ohms  
º
TJ = 125 C  
VGE = 15V  
CE = 850V  
VG E = 15V  
C E = 850V  
V
V
I C = 20A  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
R G = 120 Ohms  
0.8  
0.6  
0.4  
0.2  
R G= 20 Ohms  
I C = 10A  
25  
I C = 5A  
125  
6
8
10  
12  
14  
16  
18  
0
50  
75  
100  
150  
TJ - Degrees Centigrade  
I C - Amperes  
Fig. 11. Gate Charge  
Fig. 12. Capacitance  
15  
12  
9
10 0 0  
10 0  
10  
VCE = 600V  
I C = 5A  
I G = 10mA  
C
ies  
f = 1MHz  
6
C
oes  
3
C
res  
0
5
10  
15  
2 0  
2 5  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
Q G - nanoCoulombs  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXGH 10N170A  
IXGT 10N170A  
Fig. 13. Maxim um T ransient T herm al Resistance  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
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