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IXGH32N90B2

型号：

IXGH32N90B2

描述：

HiPerFAST IGBT B2级高速的IGBT[ HiPerFAST IGBT B2-Class High Speed IGBTs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

207 K

下载PDF手册
Advance Technical Information  
HiPerFASTTM IGBT  
IXGH 32N90B2  
IXGT 32N90B2  
VCES  
IC25  
= 900 V  
= 64 A  
B2-Class High Speed IGBTs  
VCE(sat) = 2.7 V  
tfityp  
= 150 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-247(IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
64  
32  
A
A
A
TO-268(IXGT)  
TC = 25°C, 1 ms  
200  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ ≤ 600V  
ICM = 64  
A
G
C (TAB)  
E
(RBSOA)  
PC  
TC = 25°C  
300  
W
G = Gate,  
C = Collector,  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
E = Emitter,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
z
High frequency IGBT  
High current handling capability  
MOS Gate turn-on  
z
z
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
- drive simplicity  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
z
PFC circuits  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
z
z
VGE(th)  
ICES  
IC = 250 μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
50  
750  
μA  
μA  
Advantages  
z
High power density  
Very fast switching speeds for high  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
z
VCE(sat)  
IC = IC110, VGE = 15 V  
2.2  
2.1  
2.7  
V
V
frequency applications  
TJ = 125°C  
© 2005 IXYS All rights reserved  
DS99384(12/05)  
IXGH 32N90B2  
IXGT 32N90B2  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD Outline  
IC = IC110 A; V = 10 V,  
18  
28  
S
Pulse test, t ≤C3E00 μs, duty cycle ≤ 2 %  
∅ P  
Cies  
Coes  
Cres  
1790  
121  
49  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
89  
15  
34  
nC  
nC  
nC  
e
Qge  
Qgc  
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
20  
22  
ns  
ns  
Inductive load, TJ = 25°C  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC110 , VGE = 15 V  
260  
150  
2.6  
400 ns  
ns  
VCE = 720 V, RG = Roff = 5 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
4.5 mJ  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
20  
22  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = IC110 A, VGE = 15 V  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
0.5  
3.8  
mJ  
mJ  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Note 1  
VCE = 720 V, RG = Roff = 5 Ω  
td(off)  
tfi  
360  
330  
5.75  
ns  
ns  
TO-268 Outline  
Eoff  
mJ  
RthJC  
RthCS  
0.42 K/W  
K/W  
(TO-247)  
0.25  
Note 1: Eon measured with a DSEP 30-12A ultrafast diode clamp.  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETsandIGBTsarecoveredby  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGH 32N90B2  
IXGT 32N90B2  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
@ 25  
ºC  
ºC  
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
V
= 15V  
V
GE  
= 15V  
13V  
GE  
13V  
11V  
11V  
9V  
7V  
9V  
7V  
40  
5V  
0
0
0
6
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
ºC  
70  
60  
50  
40  
30  
20  
10  
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
13V  
GE  
V
GE  
= 15V  
11V  
I
= 64A  
C
9V  
7V  
I
= 32A  
= 16A  
C
I
C
5V  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
6
5.5  
5
140  
120  
100  
80  
= 25ºC  
T
J
I
= 64A  
32A  
C
16A  
4.5  
4
3.5  
3
60  
T = 125ºC  
J
40  
25ºC  
-40ºC  
2.5  
2
20  
0
1.5  
4
5
6
7
8
9
10  
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGH 32N90B2  
IXGT 32N90B2  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
35  
30  
25  
20  
15  
10  
5
VCE =450V  
I C = 32A  
I G = 10mA  
-40ºC  
=
T
J
25ºC  
12 5 ºC  
6
4
2
0
0
0
10 20 30 40 50 60 70 80 90 100  
0
20  
40  
60  
80  
100  
I C - Amperes  
Q G - nanoCoulombs  
Fig. 10. Reverse-Bias Safe  
Operating Area  
Fig. 9. Capacitance  
10000  
1000  
100  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
C
oes  
T = 125ºC  
J
R
=10Ω  
G
C
dV/dT < 10V/ns  
res  
10  
100 200 300 400 500 600 700 800 900  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
VC E - Volts  
Fig. 11. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
0.1  
1
10  
Pulse Width - milliseconds  
100  
1000  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH 32N90B2  
IXGT 32N90B2  
Fig. 12. Dependence of Turn-off  
Energy Loss on Gate Resistance  
Fig. 13. Dependence of Turn-on  
Energy Loss on Gate Resistance  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
º
T = 125 C  
J
I
= 64A  
C
V
= 15V  
GE  
CE  
I
= 64A  
= 32A  
º
T = 125 C  
C
J
V
= 720V  
V
= 15V  
GE  
CE  
V
= 720V  
I
= 32A  
C
6
I
C
6
4
4
2
2
I
= 16A  
I
= 16A  
C
C
0
0
0
5
10 15 20 25 30 35 40 45 50  
0
5
10 15 20 25 30 35 40 45 50  
R
- Ohms  
R
- Ohms  
G
G
Fig. 14. Dependence of Turn-off  
Energy Loss on Collector Current  
Fig. 15. Dependence of Turn-on  
Energy Loss on Collector Current  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
R
=5Ω  
G
T = 125ºC  
J
R
=5Ω  
G
V
= 15V  
GE  
CE  
V
GE  
V
CE  
= 15V  
T = 125ºC  
J
V
= 720V  
= 720V  
T = 25ºC  
J
6
T = 25ºC  
J
4
2
0
10  
20  
30  
40  
50  
60  
70  
10  
20  
30  
40  
50  
60  
70  
I C - Amperes  
I C - Amperes  
Fig. 17. Dependence of Turn-on  
Energy Loss on Temperature  
Fig. 16. Dependence of Turn-off  
Energy Loss on Temperature  
16  
14  
12  
10  
8
10  
R
V
=5Ω  
Ω
= 5  
R
V
G
9
8
7
6
5
4
3
2
1
0
G
I
= 64A  
C
= 15V  
= 15V  
GE  
CE  
GE  
CE  
V
= 720V  
V
= 720V  
I
= 64A  
= 32A  
C
I
= 32A  
= 16A  
C
I
C
6
4
2
I
C
I
= 16A  
C
0
25 35 45 55 65 75 85 95 105 115 125  
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
J
T - Degrees Centigrade  
J
© 2005 IXYS All rights reserved  
IXGH 32N90B2  
IXGT 32N90B2  
Fig. 18. Dependence of Turn-off  
Switching Time on Gate Resistance  
Fig. 19. Dependence of Turn-on  
Switching Time on Gate Resistance  
550  
525  
500  
475  
450  
425  
400  
375  
350  
400  
390  
380  
370  
360  
350  
340  
330  
320  
45  
40  
35  
30  
25  
20  
15  
180  
150  
120  
90  
60  
30  
0
td(off)  
TJ = 125ºC, VGE = 15V  
CE = 720V  
tfi  
- - - - -  
td(on)  
tri  
- - - - -  
TJ = 125ºC, VGE = 15V  
VCE = 720V  
I
C
= 64A  
V
I
= 16A, 32A, 64A  
C
IC = 32A  
IC = 32A, 16A  
I
= 16A  
18  
C
4
6
8
10  
12  
R G - Ohms  
14  
16  
18 20  
4
6
8
10  
12  
- Ohms  
14  
16  
20  
R
G
Fig. 21. Dependence of Turn-on  
Switching Time on Collector Current  
Fig. 20. Dependence of Turn-off  
Switching Time on Collector Current  
500  
30  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
td(off)  
RG  
tfi  
td(on)  
RG  
tri  
- - - - -  
- - - -  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
450  
400  
350  
300  
250  
200  
150  
100  
GE = 15V  
GE = 15V  
= 5Ω, V  
VCE = 720V  
= 5Ω, V  
VCE = 720V  
º
TJ = 125 C  
º
TJ = 125 C  
º
TJ = 25 C  
º
TJ = 25 C  
0
10  
20  
30  
40  
50  
60  
70  
15 20 25 30 35 40 45 50 55 60 65  
I C - Amperes  
I C - Amperes  
Fig. 22. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 23. Dependence of Turn-on  
Switching Time on Temperature  
400  
350  
300  
250  
200  
150  
100  
40  
150  
125  
100  
75  
50  
25  
0
td(on)  
RG  
tri  
- - - - -  
35  
30  
25  
20  
15  
10  
GE = 15V  
= 5Ω , V  
I
= 64A, 32A, 16A  
C
V
CE = 720V  
I
= 64A  
C
I
= 64A, 32A, 16A  
IC = 32A  
C
td(off)  
tfi  
- - - - -  
R
=5Ω , V  
= 15V  
G
GE  
V
= 720V  
CE  
I
= 16A  
C
25 35 45 55 65 75 85 95 105 115 125  
25 35 45 55 65 75 85 95 105 115 125  
T J - Degrees Centigrade  
T - Degrees Centigrade  
J
IXYS reserves the right to change limits, test conditions, and dimensions.  
ADVANCETECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications offered  
are derived from a subjective evaluation of the design, based upon prior knowledge and  
experience, and constitute a "considered reflection" of the anticipated objective result.  
IXYS reserves the right to change limits, test conditions, and dimensions without notice.  
© 2005 IXYS All rights reserved  
厂商 型号 描述 页数 下载

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