IXGH 12N60C
Symbol
gfs
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
TO-247AD(IXGH)Outline
J
min. typ. max.
I
= I ; V = 10 V,
5
11
S
C
C90
CE
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
860
pF
V
= 25 V, V = 0 V, f = 1 MHz
64
pF
CE
GE
15
pF
Qg
32
10
10
nC
nC
nC
Qge
Qgc
I = I , V = 15 V, V = 0.5 V
C C90 GE CE CES
td(on)
tri
td(off)
tfi
20
20
ns
ns
Inductive load, TJ = 25°C
Dim. Millimeter
Inches
Min. Max. Min. Max.
I = I , V = 15 V, L = 300 µH
C
C90
GE
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
V
= 0.8 V , R = R = 18 Ω
CE
CES
G
off
60
ns
Remarks:Switchingtimesmayincreasefor
(Clamp) > 0.8 V , higher T or
increasedR
55
ns
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
V
CE
CES
J
Eoff
0.09
mJ
G
E
4.32 5.49 0.170 0.216
6.2 0.212 0.244
F5.4
td(on)
tri
20
20
ns
ns
Inductive load, TJ = 125°C
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
I = I , V = 15 V, L = 300 µH
C
C90
GE
Eon
td(off)
tfi
0.15
mJ
ns
J
1.0
1.4 0.040 0.055
V
= 0.8 V , R = R = 18 Ω
K
10.8 11.0 0.426 0.433
CE
CES
G
off
85 180
Remarks:Switchingtimesmayincreasefor
(Clamp) > 0.8 V , higher T or
increasedR
L
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
M
85 180
ns
V
CE
CES
J
N
1.5 2.49 0.087 0.102
Eoff
0.27 0.60
mJ
G
RthJC
RthCK
1.25 K/W
K/W
0.25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
