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IXGA14N120B

型号：

IXGA14N120B

描述：

IGBT的优化切换高达35千赫[ IGBT Optimized for switching up to 35 KHz ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

156 K

下载PDF手册
IXGA 14N120B  
IXGP 14N120B  
VCES  
IC25  
= 1200 V  
28 A  
IGBT  
=
Optimized for  
VCE(sat) = 3.3 V  
switching up to 35 KHz  
Preliminary data sheet  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
TO-220AB(IXGP)  
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
28  
14  
56  
A
A
A
TC = 25°C, 1 ms  
TO-263AA(IXGA)  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 100 Ω  
ICM = 28  
A
(RBSOA)  
Clamped inductive load  
@ 0.8 VCES  
G
C (TAB)  
E
PC  
TC = 25°C  
150  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
•International standard packages  
•LJEowDEVCCET(saOt) -220AB and TO-263AA  
- for minimum on-state conduction  
losses  
Md  
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4 Nm/lb.in.  
0.55/5 Nm/lb.in.  
Weight  
TO-220  
TO-263  
4
2
g
g
•MOS Gate turn-on  
- drive simplicity  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
• Uninterruptible power supplies (UPS)  
• Switch-mode and resonant-mode  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
• Cpoawpaecritsourpdpilsiecsharge  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
µA  
µA  
250  
Advantages  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15V  
100  
3.3  
nA  
V
• Easy to mount with one screw  
• Reduces assembly time and cost  
• High power density  
VCE(sat)  
2.7  
© 2005 IXYS All rights reserved  
DS99382(04/05)  
IXGA 14N120B  
IXGP 14N120B  
TO-220 AB Dimensions  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
gfs  
IC = IC110 VCE = 10 V  
5.0  
9.0  
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %  
IC(on)  
VGE = 10 V, VCE = 10V  
35  
A
Cies  
Coes  
Cres  
535  
36  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
pF  
pF  
14  
Qg  
30  
6.0  
12  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
Pins: 1 - Gate  
3 - Emitter  
2 - Collector  
4 - Collector  
Bottom Side  
Inductive load, TJ = 25°C  
IC =IC110 , VGE = 15 V  
td(on)  
tri  
td(off)  
tfi  
15  
ns  
ns  
ns  
ns  
mJ  
30  
VCE = 960 V, RG = Roff = 120 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
500 750  
330 500  
,
Eoff  
2.6  
4.0  
td(on)  
tri  
15  
30  
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC110 , VGE = 15 V  
Eon  
td(off)  
tfi  
0.8  
mJ  
ns  
VCE = 960 V, RG = Roff = 120 Ω  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 VCES  
higher TJ or increased RG  
610  
600  
4.85  
ns  
,
TO-263AAOutline  
Eoff  
mJ  
RthJC  
RthCK  
0.83 K/W  
K/W  
TO-220  
0.5  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
BottomSide  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
Min.RecommendedFootprint  
(Dimensions in inches and mm)  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
D
D1  
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
E
E1  
e
9.65  
6.86  
2.54  
10.29  
8.13  
BSC  
.380  
.270  
.100  
.405  
.320  
BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
IXGA 14N120B  
IXGP 14N120B  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
º
@ 25 C  
80  
70  
60  
50  
40  
30  
20  
10  
0
28  
24  
20  
16  
12  
8
VGE = 15V  
VGE = 15V  
13V  
11V  
13V  
11V  
9V  
9V  
7V  
4
7V  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
-50  
4
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE (sat) on  
Temperature  
º
C
28  
24  
20  
16  
12  
8
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
VGE = 15V  
13V  
VGE = 15V  
11V  
IC = 28A  
9V  
7V  
IC = 14A  
IC = 7A  
4
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
-25  
0
25  
50  
75  
100 125 150  
VC E - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
7
20  
18  
16  
14  
12  
10  
8
TJ = 25ºC  
6
5
4
3
2
IC = 28A  
14A  
7A  
6
TJ = 125ºC  
25ºC  
4
-40ºC  
2
0
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
6
7
8
9
10  
11  
12  
13  
14  
15  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGA 14N120B  
IXGP 14N120B  
Fig. 8. Dependence of Turn-Off  
Fig. 7. Transconductance  
Ene r gy on R G  
16  
14  
12  
10  
8
11  
10  
9
IC = 28A  
TJ = -40ºC  
25ºC  
8
125ºC  
7
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
6
5
IC = 14A  
6
4
3
4
2
2
1
IC = 7A  
100 150 200 250 300 350 400 450 500  
0
0
0
2
4
6
8
10 12 14 16 18 20  
R
- Ohms  
I C - Amperes  
G
Fig. 9. Dependence of Turn-Off  
Ene r gy on I C  
Fig. 10. Dependence of Turn-Off  
Energy on Temperature  
11  
11  
10  
9
10  
9
8
7
6
5
4
3
2
1
0
RG = 120Ω  
TJ = 125ºC  
VGE = 15V  
IC = 28A  
VCE = 960V  
8
7
6
RG = 120Ω  
VGE = 15V  
IC = 14A  
VCE = 960V  
5
TJ = 25ºC  
4
3
2
1
IC = 7A  
0
6
8
10 12 14 16 18 20 22 24 26 28  
25 35 45 55 65 75 85 95 105 115 125  
I C - Amperes  
T - Degrees Centigrade  
J
Fig. 12. Dependence of Turn-Off  
Switching Time on I C  
Fig. 11. Dependence of Turn-Off  
Switching Time on R G  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
2000  
1800  
1600  
1400  
1200  
1000  
800  
td(off)  
td(off)  
, tfi - - - - -  
G = 120Ω, VGE = 15V  
VCE = 960V  
R
tfi - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
TJ = 125ºC  
IC = 7A  
14A  
28A  
14A  
7A  
TJ = 25ºC  
600  
400  
200  
100 150 200 250 300 350 400 450 500  
6
8
10  
12  
14 16  
18  
20  
22  
24  
R
- Ohms  
I C - Amperes  
G
IXons.  
IXGA 14N120B  
IXGP 14N120B  
Fig. 14. Reverse-Bias  
Safe Operating Area  
Fig. 13. Dependence of Turn-Off  
Switching Time on Temperature  
1100  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
30  
27  
24  
21  
18  
15  
12  
9
td(off)  
t -  
fi  
- - - -  
IC = 28A  
14A  
RG = 120Ω  
VGE = 15V  
VCE = 960V  
7A  
º
TJ = 125 C  
G = 120Ω  
dV/dT < 10V/ns  
6
R
IC = 7A  
14A  
3
28A  
0
100  
200  
300  
400  
500  
600  
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
J
V
C E - Volts  
Fig. 15. Gate Charge  
Fig. 16. Capacitance  
1000  
100  
10  
16  
14  
12  
10  
8
f = 1 MHz  
VCE = 600V  
I
I
C = 14A  
G = 10mA  
C
ies  
6
C
oes  
4
C
res  
2
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
3
6
9
12 15 18 21 24 27 30  
Q G - nanoCoulombs  
VCE - Volts  
Fig. 17. Maximum Transient Thermal Resistance  
1
0.1  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2005 IXYS All rights reserved  
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