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IXFR66N50Q2

型号：

IXFR66N50Q2

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

118 K

下载PDF手册
HiPerFETTM  
Power MOSFET  
Q2-Class  
IXFR66N50Q2  
VDSS = 500V  
ID25 = 50A  
RDS(on) ≤ 85mΩ  
≤ 250ns  
trr  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low Qg  
Low intrinsic Rg, low trr  
ISOPLUS247 (IXFR)  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
ID25  
IDM  
TC = 25°C  
50  
A
A
TC = 25°C, pulse width limited by TJM  
264  
IA  
TC = 25°C  
TC = 25°C  
66  
4
A
J
G = Gate  
S = Source  
D = Drain  
EAS  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
500  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• Double metal process for low gate  
resistance  
• International standard package  
• EpoxymeetUL94V-0, flammability  
classification  
TJM  
Tstg  
-55 ... +150  
TL  
Maximum lead temperature for soldering  
Plastic body for 10s  
300  
260  
°C  
°C  
V~  
• Avalanche energy and current rated  
• Fast intrinsic Rectifier  
TSOLD  
VISOL  
FC  
50/60 Hz, RMS, 1 minute  
Mounting force  
2500  
Advantages  
20..120/4.5..27  
5
N/lb.  
• Easy to mount  
• Space savings  
• High power density  
Weight  
g
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 30V, VDS = 0V  
500  
3.0  
V
V
5.5  
± 200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
2 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 33A, Note 1  
85 mΩ  
DS99076A(05/08)  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR66N50Q2  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS247 (IXFR) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 33A, Note 1  
30  
44  
S
Ciss  
Coss  
Crss  
9125  
1200  
318  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
32  
16  
60  
10  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 33A  
RG = 1Ω (External)  
Qg(on)  
Qgs  
200  
47  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 33A  
Qgd  
98  
RthJC  
RthCS  
0.25 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
66  
A
A
V
ISM  
VSD  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
264  
1.5  
trr  
250 ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
1
μC  
VR = 100V, VGS = 0V  
10  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFR66N50Q2  
Fig. 1. Output Characteristics  
Fig. 2. Extended Output Characteristics  
@ 25 C  
°
@ 25 C  
°
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
V
GS  
= 10V  
V
GS  
= 10V  
8V  
8V  
7V  
6V  
7V  
5.5V  
60  
5V  
6V  
5V  
40  
4.5V  
20  
0
0
1
2
3
4
VD S - Volts  
5
6
7
0
2
4
6
8
10  
12  
VD S - Volts  
14  
16  
18  
20  
Fig. 3. Output Characteristics  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value  
vs. Junction Temperature  
@ 125 C  
°
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
7V  
GS  
V
= 10V  
GS  
6V  
I
= 66A  
D
5V  
I
= 33A  
D
4.5V  
3.5V  
12  
0
2
4
6
8
10  
14  
-50 -25  
0
25  
50  
75  
100 125 150  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value  
vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
GS  
= 10V  
T = 125 C  
°
J
T = 25 C  
°
J
0
0
20  
40  
60  
80 100 120 140 160  
-50 -25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2008 IXYS CORPORATION, All rights reserved  
IXFR66N50Q2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T = - 40 C  
°
J
25 C  
°
T = 125 C  
°
125 C  
°
J
25 C  
°
- 40 C  
°
0
20  
40  
60  
80  
100  
120  
140  
3.0  
3.5  
4.0  
4.5 5.0  
VG S - Volts  
5.5  
6.0  
6.5  
7.0  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
180  
160  
140  
120  
100  
80  
V
= 250V  
DS  
I = 33A  
D
I
G
= 10mA  
60  
T = 125 C  
°
J
40  
T = 25 C  
°
J
20  
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3  
VS D - Volts  
0
20 40 60 80 100 120 140 160 180 200  
Q G - nanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.000  
0.100  
0.010  
0.001  
100000  
10000  
1000  
f
= 1MHz  
C
iss  
C
oss  
C
rss  
100  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: F_66N50Q2 (94) 05-28-08-C  
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