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IXFR32N50Q_04

型号：

IXFR32N50Q_04

描述：

HiPerFET功率MOSFET ISOPLUS247[ HiPerFET Power MOSFETs ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

558 K

下载PDF手册
HiPerFETTMPowerMOSFETs  
ISOPLUS247TM  
IXFR 32N50Q VDSS  
ID25  
= 500 V  
= 30 A  
RDS(on) = 0.16 Ω  
(Electrically Isolated Back Surface)  
trr  
= 250 ns  
N-ChannelEnhancementMode  
High dV/dt, Low trr, HDMOSTM Family  
ISOPLUS
E 153432  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
G
D
VGS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Isolated back surface*  
D = Drain  
ID25  
IDM  
IAR  
T
= 25°C  
30  
120  
30  
A
A
A
TC = 25°C, Pulse width limited by TJM  
TCC = 25°C  
G = Gate  
S = Source  
EAS  
EAR  
T
= 25°C  
1.5  
45  
J
mJ  
TCC = 25°C  
* Patent pending  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
5
V/ns  
Features  
PD  
TC = 25°C  
310  
W
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
2500  
6
°C  
V~  
g
z
Low drain to tab capacitance(<50pF)  
VISOL  
Weight  
50/60 Hz, RMS  
t = 1 minute leads-to-tab  
z
Low RDS (on) HDMOSTM process  
z
Rugged polysilicon gate cell structure  
z
Unclamped Inductive Switching (UIS)  
rated  
z
Fast intrinsic Rectifier  
Applications  
Symbol  
TestConditions  
Characteristic Values  
z
DC-DC converters  
Battery chargers  
(TJ = 25°C, unless otherwise specified)  
z
min. typ. max.  
z
Switched-mode and resonant-mode  
VDSS  
VGS = 0 V, ID = 1mA  
500  
2.5  
V
V
power supplies  
z
DC choppers  
VGS(th)  
IGSS  
VDS = VGS, ID = 4mA  
VGS = 20 VDC, VDS = 0  
4.5  
z
AC motor control  
100 nA  
Advantages  
IDSS  
VDS = V  
T = 25°C  
TJJ = 125°C  
100  
1
µA  
VGS = 0DVSS  
mA  
z
Easy assembly  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = IT  
Notes 1, 2  
0.16  
Ω
z
High power density  
DS98608D(01/04)  
© 2004 IXYS All rights reserved  
IXFR 32N50Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
ISOPLUS247OUTLINE  
VDS = 10 V; ID = IT  
Note 2  
18  
28  
S
Ciss  
Coss  
Crss  
3950  
640  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
210  
td(on)  
tr  
td(off)  
tf  
35  
42  
75  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
RG = 1 Ω (External),  
Qg(on)  
Qgs  
150  
26  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT  
Qgd  
85  
RthJC  
RthCK  
0.40 K/W  
K/W  
0.15  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
IS  
VGS = 0 V  
32  
A
A
ISM  
Repetitive; pulse width limited by TJM  
128  
VSD  
trr  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
250  
ns  
I = I ,  
-Fdi/dst = 100 A/ms,  
VR = 100 V  
QRM  
IRM  
0.75  
7.5  
µC  
A
Note: 1. IT test condition: IT = 16A  
Note: 2. Pulse test, t ≤ 300 µs,  
duty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
IXFR 32N50Q  
Figure 2. Output Characteristics at 125OC  
Figure 1. Output Characteristics at 25OC  
80  
70  
60  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
VGS=10V  
TJ = 25OC  
TJ = 125OC  
VGS= 9V  
9V  
6V  
8V  
7V  
8V  
7V  
6V  
5V  
5V  
4V  
0
4
8
12  
16  
20  
0
4
8
12  
16  
20  
VDS - Volts  
VDS - Volts  
Figure 3. RDS(on) normalized to 15A/25OC vs. ID  
Figure 4. RDS(on) normalized to 15A/25OC vs. TJ  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
VGS = 10V  
VGS = 10V  
Tj=1250 C  
ID = 32A  
ID = 16A  
Tj=250 C  
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
TJ - Degrees C  
ID - Amperes  
Figure6. AdmittanceCurves  
Figure5.DrainCurrentvs.CaseTemperature  
40  
32  
24  
16  
8
50  
40  
30  
20  
10  
0
TJ = 25oC  
TJ = 125oC  
0
-50 -25  
0
25 50 75 100 125 150  
2
3
4
5
6
TC - Degrees C  
VGS - Volts  
© 2004 IXYS All rights reserved  
IXFR 32N50Q  
Figure8.CapacitanceCurves  
Figure7. GateCharge  
14  
12  
10  
8
10000  
1000  
100  
F = 1MHz  
Vds=300V  
ID=16A  
IG=10mA  
Ciss  
Coss  
Crss  
6
4
2
0
0
50  
100  
150  
200  
250  
0
5
10  
15  
20  
25  
Gate Charge - nC  
VDS - Volts  
Figure 9. Forward Voltage Drop of the  
IntrinsicDiode  
100  
80  
60  
40  
20  
0
VGS= 0V  
TJ=125OC  
TJ=25OC  
0.4  
0.6  
0.8  
VSD - Volts  
1.0  
1.2  
Figure10.TransientThermalResistance  
0.60  
0.40  
0.20  
0.10  
0.08  
0.06  
0.04  
0.02  
0.01  
10-3  
10-2  
10-1  
Pulse Width - Seconds  
100  
101  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505  
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