PolarTM Power MOSFET
HiPerFETTM
VDSS = 1100V
ID25 = 16A
RDS(on) ≤ 400mΩ
≤ 300ns
IXFR30N110P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
trr
ISOPLUS247 (IXFR)
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
1100
1100
V
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
VGSS
VGSM
Continuous
Transient
± 30
± 40
V
V
ID25
IDM
TC = 25°C
16
75
A
A
Isolated Tab
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
TC = 25°C
15
A
J
EAS
1.5
G = Gate
D = Drain
S = Source
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
15
V/ns
W
320
Features
TJ
-55 ... +150
150
°C
°C
°C
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TJM
Tstg
-55 ... +150
TL
Maximum lead temperature for soldering
Plastic body for 10s
300
260
°C
°C
V~
• Low drain to tab capacitance(<30pF)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
TSOLD
VISOL
FC
50/60 Hz, RMS, 1 minute
Mounting force
2500
• Fraatsetdintrinsic Rectifier
20..120/4.5..27
5
N/lb.
Advantages
Weight
g
• Easy assembly
• Space savings
• High power density
Symbol
Test Conditions
Characteristic Values
Applications:
(TJ = 25°C, unless otherwise specified)
Min.
Typ. Max.
z High Voltage Switched-mode and
resonant-mode power supplies
z High Voltage Pulse Power Applications
z High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 1mA
VGS = ± 30V, VDS = 0V
1100
3.5
V
V
6.5
± 200 nA
z High Voltage DC-DC converters
z High Voltage DC-AC inverters
IDSS
VDS = VDSS
VGS = 0V
50 μA
2.5 mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 15A, Note 1
400 mΩ
DS99898A(04/08)
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