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IXFR180N15P

型号：

IXFR180N15P

描述：

PolarHV HiPerFET功率MOSFET ISOPLUS247[ PolarHV HiPerFET Power MOSFET ISOPLUS247 ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

158 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFR 180N15P VDSS  
ID25  
= 150 V  
= 100 A  
RDS(on) ≤ 13 mΩ  
≤ 200 ns  
ISOPLUS247TM  
trr  
(Electrically Isolated Back Surface)  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
ISOPLUS247 (IXFR)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 175° C  
150  
150  
V
TJ = 25° C to 175° C; RGS = 1 MΩ  
V
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
TAB  
S
ID25  
TC =25° C  
100  
A
ID(RMS)  
IDM  
External Lead current limit  
75  
A
A
G = Gate  
S = Source  
D = Drain  
TC = 25° C, pulse width limited by TJM  
380  
IAR  
TC =25° C  
60  
A
EAR  
EAS  
TC =25° C  
TC =25° C  
100  
4
mJ  
J
Features  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 4 Ω  
,
10  
V/ns  
l
International standard isolated  
package  
UL recognized package  
TC = 25° C  
300  
W
l
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +150  
°C  
°C  
°C  
l
Silicon chip on Direct-Copper-Bond  
substrate  
- High power dissipation  
- Isolated mounting surface  
- 2500V electrical isolation  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic diode  
TL  
1.6 mm (0.062 in.) from case for 10 s  
50/60 Hz, RMS, 1 minute  
300  
°C  
l
l
l
VISOL  
2500  
V~  
Fd  
Mounting force  
20..120 / 4.5..26  
5
N/lb  
g
Weight  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
High power density  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 20 VDC, VDS = 0  
VDS = VDSS, VGS = 0 V  
150  
V
V
l
l
2.5  
5.0  
100  
25  
nA  
µA  
IDSS  
TJ = 150° C  
1.5 mA  
RDS(on)  
VGS = 10 V, ID = IT , Note 1  
13 mΩ  
DS99242(01/06)  
© 2006 IXYS All rights reserved  
IXFR 180N15P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
ISOPLUS247 Outline  
VDS = 10 V; ID = IT, Notes 1, 2  
55  
86  
S
Ciss  
Coss  
Crss  
7000  
2250  
515  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
32  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 60A  
RG = 3.3 Ω (External)  
150  
36  
Qg(on)  
Qgs  
240  
55  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
140  
RthJC  
RthCS  
0.5 ° C/W  
° C/W  
0.15  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
180  
380  
1.5  
A
ISM  
Repetitive  
A
V
VSD  
IF = IS, VGS = 0 V, Note 1  
trr  
IF = 25A, -di/dt = 100 A/µs  
200  
ns  
µC  
A
QRM  
IRM  
VR = 100V, VGS = 0V  
0.6  
6
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d ≤ 2 %;  
2. Test current IT = 90 A.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFR 180N15P  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
º
C
@ 25 C  
º
180  
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
VGS = 10V  
V
= 10V  
9V  
GS  
9V  
8V  
8V  
7V  
60  
7V  
6V  
40  
20  
6
40  
0
0
0
0
0
0.4  
0.8  
1.2  
1.6  
2
0
1
2
3
4
5
6
7
8
9
10  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 150  
Fig. 4. RDS(on Norm alized to ID = 90A  
)
º
C
Value vs. Junction Tem perature  
180  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2
VGS = 10V  
9V  
VGS = 10V  
8
ID = 180A  
1.8  
1.6  
1.4  
1.2  
1
7V  
ID = 90A  
60  
6V  
5V  
40  
20  
0.8  
0.6  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
-50 -25  
0
25  
50  
75 100 125 150 175  
VD S - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Norm alized to ID = 90A  
Value vs. Drain Current  
Fig. 6. Drain Current vs. Case  
Tem perature  
3.4  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
External Lead Current Limit  
= 175ºC  
TJ  
VGS = 10V  
V
= 15V  
GS  
= 25ºC  
TJ  
0.7  
50  
100  
150  
200  
250  
300  
350  
-50 -25  
0
25  
50  
75  
100 125 150 175  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFR 180N15P  
Fig. 8. Transconductance  
Fig. 7. Input Adm ittance  
120  
100  
80  
60  
40  
20  
0
250  
225  
200  
175  
150  
125  
100  
75  
= -40ºC  
25ºC  
150ºC  
TJ  
= 150ºC  
25ºC  
-40ºC  
TJ  
50  
25  
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
8
8.5  
9
0
25 50 75 100 125 150 175 200 225 250  
VG S - Volts  
I D - Amperes  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
350  
300  
250  
200  
150  
100  
50  
VDS = 75V  
ID = 90A  
IG = 10mA  
º
TJ = 150 C  
= 25ºC  
TJ  
0
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
0
25 50 75 100 125 150 175 200 225 250  
VS D - Volts  
Q G - nanoCoulombs  
Fig. 12. Forw ard-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
f = 1MHz  
RDS(on) Limit  
25µs  
100µs  
C
C
is  
1ms  
os  
rs  
10ms  
C
DC  
= 175ºC  
TJ  
= 25ºC  
TC  
1
0
5
10  
15  
20  
25  
30  
35  
40  
1
10  
100  
1000  
VDS - Volts  
VD S - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFR 180N15P  
Fig. 13. Maxim um Transient Therm al Resistance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width -Seconds  
© 2006 IXYS All rights reserved  
IXYSREF:T_180N15P(88)03-23-06-C.xls  
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