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IXFN70N60Q2

型号：

IXFN70N60Q2

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

116 K

下载PDF手册
HiPerFETTM Power  
MOSFET Q2-Class  
VDSS = 600V  
ID25 = 70A  
RDS(on) ≤ 88mΩ  
IXFN70N60Q2  
trr  
≤ 250ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
miniBLOC, SOT-227 B  
E153432  
Symbol  
Test Conditions  
Maximum Ratings  
S
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
G
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
S
D
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
70  
280  
A
A
IA  
TC = 25°C  
TC = 25°C  
70  
5
A
J
G = Gate  
S = Source  
D = Drain  
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
V/ns  
W
890  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
Double Metal Process for Low  
Gate Resistance  
TL  
1.6mm (0.062 in.) from Case for 10s  
300  
°C  
z miniBLOC, with Aluminium Nitride  
Isolation  
VISOL  
50/60Hz, RMS  
t = 1min  
t = 1s  
2500  
3000  
V~  
V~  
z Avalanche Rated  
z Low Package Inductance  
z Fast Intrinsic Rectifier  
IISOL ≤ 1mA  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Applications  
z
DC-DC Converters  
Switched-Mode and Resonant-Mode  
z
Power Supplies  
DC Choppers  
Pulse Generators  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
Advantages  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
Easy to Mount  
Space Savings  
z
5.5  
z
High Power Density  
±200  
nA  
IDSS  
50  
3
μA  
mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
88  
mΩ  
DS99029D(06/09)  
© 2009 IXYS Corporation, All Rights Reserved  
IXFN70N60Q2  
Symbol  
Test Conditions  
Characteristic Values  
SOT-227B Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
36  
50  
S
Ciss  
Coss  
Crss  
12  
1340  
345  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
26  
25  
60  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 35A  
RG = 1Ω (External)  
Qg(on)  
Qgs  
265  
57  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
120  
RthJC  
RthCS  
0.14 °C/W  
°C/W  
0.05  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
70  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
280  
1.5  
V
250  
ns  
IF = 25A, -di/dt = 100A/μs  
QRM  
IRM  
1.2  
8.0  
μC  
A
VR= 100V, VGS = 0V  
Notes1: Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.  
Ordering Information  
The IXFN70N60Q2 is also available with brass capture nuts in place of the normal  
Zinc coated steel capture nuts. The ordering part number is IXFN70N60Q2-BN.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFN70N60Q2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
5V  
6V  
5V  
0
1
2
3
4
5
6
7
0
2
4
6
8
10 12 14 16 18 20  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs.  
Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1. 8  
1. 4  
1. 0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
I D= 70A  
I D= 35A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1. 8  
1. 6  
1. 4  
1. 2  
1. 0  
0.8  
0.6  
80  
70  
60  
50  
40  
30  
20  
10  
VGS = 10V  
º
TJ = 125 C  
º
TJ = 25 C  
0
0
20  
40  
60 80  
I D - Amperes  
100  
120  
140  
-50  
-25  
0
25  
TC - Degrees Centigrade  
50  
75  
100  
125  
150  
© 2009 IXYS Corporation, All Rights Reserved  
IXFN70N60Q2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
º
TJ = - 40 C  
º
25 C  
º
º
T = 125  
J
C
25 C  
º
1 2 5 C  
º
- 40 C  
0
0
0
10 20 30 40 50 60 70 80 90 100  
I D - Amperes  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
14 0  
12 0  
10 0  
80  
60  
40  
20  
0
10  
9
8
7
6
5
4
3
2
VDS = 300V  
I D= 35A  
I G= 10mA  
º
TJ = 125 C  
º
TJ = 25 C  
1
0
0
40  
80  
120  
160  
Q G - nanoCoulombs  
200  
240  
280  
0.4  
0.5  
0.6  
0.7  
0.8  
VSD - Volts  
0.9  
1.0  
1.1  
1.2  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.000  
0.100  
0.010  
0.001  
100000  
10000  
1000  
f = 1MHz  
C
iss  
C
oss  
C
rss  
10 0  
0
5
10  
15  
20  
VDS - Volts  
25  
30  
35  
40  
0.0001  
0.001  
0.01 0.1  
Pulse Width - Seconds  
1
10  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F _70N60Q2(95)5-28-08-A  
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