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IXFT42N50P2

型号:

IXFT42N50P2

描述:

PolarP2 HiPerFET功率MOSFET[ PolarP2 HiperFET Power MOSFET ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

132 K

Advance Technical Information  
PolarP2TM HiperFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 42A  
RDS(on) 145mΩ  
IXFH42N50P2  
IXFT42N50P2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247 (IXFH)  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
TO-268 (IXFT)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
ID25  
IDM  
TC = 25°C  
42  
A
A
S
TC = 25°C, Pulse Width Limited by TJM  
126  
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
42  
A
J
EAS  
1.4  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
830  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z International Standard Packages  
z Fast Intrinsic Rectifier  
z Avalanche Rated  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
z Low RDS(ON) and QG  
z Low Package Inductance  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z High Power Density  
z Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
z Space Savings  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
500  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
4.5  
z Switch-Mode and Resonant-Mode  
Power Supplies  
z DC-DC Converters  
±100 nA  
IDSS  
10 μA  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
TJ = 125°C  
1 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
145 mΩ  
DS100255(03/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH42N50P2  
IXFT42N50P2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
23  
36  
S
Ciss  
Coss  
Crss  
5300  
555  
43  
pF  
pF  
pF  
P  
1
2
3
td(on)  
tr  
td(off)  
tf  
23  
12  
42  
9
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 3Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Qg(on)  
Qgs  
92  
26  
36  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.15 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
42  
A
A
V
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
168  
1.3  
TO-268 Outline  
trr  
250  
ns  
A
IF = 21A, -di/dt = 100A/μs  
IRM  
QRM  
12  
1.05  
VR = 85V, VGS = 0V  
μC  
Note  
1. Pulse test, t 300μs, duty cycle, d 2%.  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
4 - Drain  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a  
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test  
conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH42N50P2  
IXFT42N50P2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
8V  
VGS = 10V  
7V  
7V  
6V  
5V  
6V  
5V  
0
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 21A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 42A  
I D = 21A  
5V  
4V  
0
2
4
6
8
10  
12  
14  
16  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 21A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH42N50P2  
IXFT42N50P2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
60  
50  
40  
30  
20  
10  
0
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
120  
100  
80  
60  
40  
20  
0
10  
9
8
7
6
5
4
3
2
1
VDS = 250V  
I D = 21A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Maximum Transient Thermal Impedance  
10,000  
1,000  
100  
0.30  
0.10  
C
iss  
C
oss  
C
rss  
= 1 MHz  
5
f
10  
0.01  
0
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F_42N50P2(7J-N45)03-17-10  
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