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IXFL70N60Q2

型号：

IXFL70N60Q2

描述：

HiPerFET功率MOSFET Q2级[ HiPerFET Power MOSFET Q2-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

141 K

下载PDF手册
HiPerFETTM Power  
MOSFET Q2-Class  
VDSS = 600V  
ID25 = 37A  
IXFL70N60Q2  
R
≤ 92mΩ  
trrDS(on) ≤ 250ns  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic RG  
High dV/dt, Low trr  
ISOPLUS264  
Symbol  
Test Conditions  
Maximum Ratings  
G
ISOLATED TAB  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
D
S
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G = Gate  
S = Source  
D = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
37  
280  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
35  
5
A
J
Features  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
20  
360  
V/ns  
W
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
z Isolated Mounting Surface  
z 2500V Electrical Isolation  
z Fast Intrinsic Diode  
z Avalanche Rated  
TJ  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
z Low QG  
z Low Package Inductance  
TL  
TSOLD  
1.6 mm (0.063 in.) from Case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
40..120 / 9..27  
N/lb.  
Advantages  
VISOL  
50/60 Hz, RMS t = 1 min  
2500  
3000  
V~  
V~  
z High Power Density  
z Easy to Mount  
z Space Savings  
IISOL ≤ 1 mA  
t = 1 s  
Weight  
8
g
Applications  
z DC-DC Converters  
Symbol  
Test Conditions  
Characteristic Values  
z Battery Chargers  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
600  
3.0  
Typ.  
Max.  
z Switched-Mode and Resonant-Mode  
Power Supplies  
BVDSS  
VGS(th)  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
V
V
z DC Choppers  
5.5  
z Temperature and Lighting Controls  
IGSS  
IDSS  
VGS = ±30 V, VDS = 0V  
VDS = VDSS, VGS = 0V  
± 200 nA  
100 μA  
TJ = 125°C  
5
mA  
RDS(on)  
VGS = 10V, ID = 35A, Note 1  
92 mΩ  
DS100068A(06/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFL70N60Q2  
Symbol  
Test Conditions  
Characteristic Values  
ISOPLUS264TM (IXFL) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 35A, Note 1  
36  
50  
S
Ciss  
Coss  
Crss  
12  
1340  
345  
nF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
26  
25  
60  
12  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 35A  
RG = 1Ω (External)  
Note: Bottom heatsink meets  
Qg(on)  
Qgs  
265  
57  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 35A  
Qgd  
120  
RthJC  
RthCS  
0.35 °C/W  
°C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
70  
A
A
ISM  
VSD  
trr  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
280  
1.5  
Ref: IXYS CO 0128  
V
250  
ns  
IF = 25A, VGS = 0V  
-di/dt = 100 A/μs  
VR = 100 V  
QRM  
IRM  
1.2  
8.0  
μC  
A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFL70N60Q2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
70  
60  
50  
40  
30  
20  
10  
0
140  
120  
100  
80  
60  
40  
20  
0
VGS = 10V  
7V  
VGS = 10V  
7V  
6V  
5V  
6V  
5V  
0
2
4
6
8
10 12 14 16 18 20  
DS - Volts  
0
1
2
3
4
5
6
7
V
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to 0.5 ID25 Value vs.  
Junction Temperature  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.6  
2.2  
1. 8  
1. 4  
1. 0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
I D= 70A  
I D= 35A  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
2
4
6
8
10  
12  
14  
16  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to 0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case Temperature  
2.8  
2.6  
2.4  
2.2  
2.0  
1. 8  
1. 6  
1. 4  
1. 2  
1. 0  
0.8  
0.6  
40  
35  
30  
25  
20  
15  
10  
5
VGS = 10V  
º
TJ = 125 C  
º
TJ = 25 C  
0
0
20  
40  
60 80  
I D - Amperes  
100  
120  
140  
-50  
-25  
0
25  
50  
75  
100  
TC - Degrees Centigrade  
125  
150  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFL70N60Q2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
º
TJ = - 40 C  
º
25 C  
º
º
T = 125  
J
C
25 C  
º
1 2 5 C  
º
- 40 C  
0
0
0
10 20 30 40 50 60 70 80 90 100  
I D - Amperes  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
VGS - Volts  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
14 0  
12 0  
10 0  
80  
60  
40  
20  
0
10  
9
8
7
6
5
4
3
2
VDS = 300V  
I D= 35A  
I G= 10mA  
º
TJ = 125 C  
º
TJ = 25 C  
1
0
0
40  
80  
120  
160  
Q G - nanoCoulombs  
200  
240  
280  
0.4  
0.5  
0.6  
0.7  
0.8  
VSD - Volts  
0.9  
1.0  
1.1  
1.2  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.000  
100000  
10000  
1000  
f = 1MHz  
C
iss  
0.100  
0.010  
C
oss  
C
rss  
10 0  
0
5
10  
15  
20  
VDS - Volts  
25  
30  
35  
40  
1
10  
100  
Pulse Width - millisecond  
1000  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: F _70N60Q2(95)5-28-08-A  
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