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IXFH230N075T2

型号：

IXFH230N075T2

描述：

TrenchT2 HiperFET功率MOSFET[ TrenchT2 HiperFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

169 K

下载PDF手册
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 75V  
ID25 = 230A  
RDS(on) ≤ 4.2mΩ  
IXFH230N075T2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-247  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D
Tab  
S
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
75  
75  
V
V
VDGR  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
VGSM  
Transient  
± 20  
V
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
230  
160  
A
A
A
Lead Current Limit, RMS  
Features  
TC = 25°C, Pulse Width Limited by TJM  
700  
115  
850  
z International Standard Package  
z 175°C Operating Temperature  
z High Current Handling Capability  
z Avalanche Rated  
IA  
TC = 25°C  
TC = 25°C  
A
EAS  
mJ  
PD  
TC = 25°C  
480  
W
z Fast Intrinsic Rectifier  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
z
Low RDS(on)  
TJM  
Tstg  
-55 ... +175  
Advantages  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
Easy to Mount  
Space Savings  
z
Weight  
6
g
z
High Power Density  
Applications  
z
Automotive  
- Motor Drives  
- 12V Power Bus  
- ABS Systems  
DC/DC Converters and Off-Line UPS  
Primary- Side Switch  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
75  
V
V
z
2.0  
4.0  
z
High Current Switching Applications  
±200 nA  
IDSS  
25 μA  
TJ = 150°C  
250 μA  
RDS(on)  
VGS = 10V, ID = 50A, Note 1  
4.2 mΩ  
DS100075A(03/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH230N075T2  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-247 (IXFH) Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 60A, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
50  
85  
S
Ciss  
Coss  
Crss  
10.5  
1165  
125  
nF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
23  
18  
33  
15  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
e
RG = 2Ω (External)  
Terminals: 1 - Gate  
2 - Drain  
Inches  
3 - Source  
Qg(on)  
Qgs  
178  
53  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
41  
RthJC  
RthCH  
0.31 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
230  
900  
1.3  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
IS  
VGS = 0V  
A
A
V
R
4.32  
5.49 .170 .216  
ISM  
VSD  
Repetitive, Pulse width limited by TJM  
IF = 100A, VGS = 0V, Note 1  
trr  
59  
3.6  
ns  
A
IF = 115A, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 37V  
106  
nC  
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFH230N075T2  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
240  
200  
160  
120  
80  
VGS = 15V  
320  
280  
240  
200  
160  
120  
80  
VGS = 15V  
10V  
10V  
9V  
9V  
8V  
7V  
8V  
7V  
6V  
5V  
6V  
5V  
40  
40  
0
0
0.0  
0.0  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
2.0  
300  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 115A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
240  
200  
160  
120  
80  
VGS = 15V  
VGS = 10V  
10V  
9V  
8V  
I D = 230A  
7V  
6V  
5V  
I D = 115A  
40  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 115A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
180  
160  
140  
120  
100  
80  
External Lead Current Limit  
TJ = 175ºC  
VGS = 10V  
15V  
- - - -  
60  
40  
TJ = 25ºC  
250  
20  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
200  
50  
100  
150  
200  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH230N075T2  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 150ºC  
25ºC  
- 40ºC  
150ºC  
60  
60  
40  
40  
20  
20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
1.3  
40  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
10  
9
8
7
6
5
4
3
2
1
0
300  
270  
240  
210  
180  
150  
120  
90  
VDS = 38V  
I D = 115A  
I G = 10mA  
TJ = 150ºC  
60  
TJ = 25ºC  
30  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig.12.Forward-BiasSafeOperatingArea
1000  
100,000  
10,000  
1,000  
100  
RDS(on) Limit  
= 1 MHz  
f
C
25µs  
iss  
100  
100µs  
External Lead Current Limit  
C
oss  
1ms  
10  
10ms  
C
rss  
DC  
100ms  
1
1
10  
100  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
VDS- Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFH230N075T2  
Fig. 14. Resistive Turn-on Rise Time vs.  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Drain Current  
22  
20  
18  
16  
14  
12  
10  
26  
24  
22  
20  
18  
16  
14  
12  
10  
RG = 2Ω , VGS = 10V  
DS = 38V  
RG = 2ꢀ , VGS = 10V  
VDS = 38V  
V
TJ = 25ºC  
I D = 230A  
I D = 115A  
TJ = 125ºC  
110 120 130 140 150 160 170 180 190 200 210 220 230  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 16. Resistive Turn-off Switching Times vs.  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Junction Temperature  
30  
65  
50  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
60  
45  
40  
35  
30  
25  
20  
15  
10  
5
tf  
t
d(off) - - - -  
RG = 2Ω, VGS = 10V  
DS = 38V  
t r  
t
d(on) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 38V  
55  
50  
45  
40  
35  
30  
25  
20  
15  
I D = 230A, 115A  
V
V
I D = 115A  
I D = 230A  
2
4
6
8
10  
12  
14  
16  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
280  
240  
200  
160  
120  
80  
280  
240  
200  
160  
120  
80  
26  
24  
22  
20  
18  
16  
14  
12  
10  
60  
55  
50  
45  
40  
35  
30  
25  
20  
tf  
t
d(off) - - - -  
RG = 2ꢀ, VGS = 10V  
DS = 38V  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = 10V  
DS = 38V  
V
V
TJ = 125ºC  
I D = 115A  
40  
40  
TJ = 25ºC  
I D = 230A  
0
0
2
4
6
8
10  
12  
14  
16  
110 120 130 140 150 160 170 180 190 200 210 220 230  
ID - Amperes  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXFH230N075T2  
Fig. 19. Maximum Transient Thermal Impedance  
1.000  
0.100  
0.010  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: T_230N075T2(V6)02-26-10-C  
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