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IXFN100N50P

型号：

IXFN100N50P

描述：

PolarHV HiPerFET功率MOSFET[ PolarHV HiPerFET Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

158 K

下载PDF手册
PolarHVTM HiPerFET  
Power MOSFET  
IXFN 100N50P  
VDSS = 500 V  
ID25 = 90  
RDS(on) ≤ 49 mΩ  
≤ 200 ns  
A
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
miniBLOC, SOT-227 B (IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25° C to 150° C  
500  
500  
V
V
S
G
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
S
ID25  
IDRMS  
IDM  
TC =25° C  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
90  
75  
250  
A
A
A
D
G = Gate  
D = Drain  
IAR  
TC =25° C  
100  
A
S = Source  
EAR  
EAS  
TC =25° C  
TC =25° C  
100  
5
mJ  
J
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
dv/dt  
PD  
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS  
TJ ≤150° C, RG = 2 Ω  
,
20  
V/ns  
TC =25° C  
1040  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
• International standard package  
• Encapsulating epoxy meets  
UL94V-0, flammability classification  
• miniBLOC with Aluminium nitride  
isolation  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
2500  
3000  
°C  
V~  
V~  
VISOL  
50/60 Hz, RMS  
t = 1 min  
IISOL ≤1 mA  
t = 1 s  
l
Fast recovery diode  
Unclamped Inductive Switching (UIS)  
l
Md  
Mounting torque  
Terminal connection torque  
1.5 / 13 Nm/lb.in.  
1.5 / 13 Nm/lb.in.  
rated  
l
Low package inductance  
Weight  
SOT-227B  
30  
g
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
l
Easy to mount  
Space savings  
High power density  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
VGS = 30 VDC, VDS = 0  
500  
V
V
l
l
3.0  
5.0  
200  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
2000  
µA  
µA  
TJ = 125° C  
RDS(on)  
VGS = 10 V, ID = IT, Note 1  
49 mΩ  
DS99497E(01/06)  
© 2006 IXYS All rights reserved  
IXFN 100N50P  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
SOT-227B Outline  
VDS = 20 V; ID = IT, Note 1  
50  
80  
S
Ciss  
Coss  
Crss  
20  
1700  
140  
nF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
36  
29  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
RG = 1 Ω (External)  
110  
26  
Qg(on)  
Qgs  
240  
96  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = IT  
Qgd  
78  
RthJC  
RthCS  
0.12 ° C/W  
° C/W  
0.05  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
Test Conditions  
IS  
VGS = 0 V  
100  
250  
1.5  
A
ISM  
VSD  
trr  
Repetitive  
A
V
IF = IS, VGS = 0 V, Note 1  
IF = 25A, -di/dt = 100 A/µs  
200  
ns  
QRM  
IRM  
VR = 100V  
0.6  
6.0  
µC  
A
Notes:  
1. Pulse test, t ≤300 µs, duty cycle d≤ 2 %  
Test current IT = 50 A  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
6,534,343  
6,583,505  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXFN 100N50P  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
8V  
V
= 10V  
9V  
GS  
GS  
8V  
7V  
6V  
7V  
6V  
60  
40  
20  
5V  
0
0
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
0
2
4
6
8
10 12 14 16 18 20 22 24 26  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 50A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
V
= 10V  
GS  
8V  
7V  
V
= 10V  
GS  
I
= 100A  
D
6V  
I
= 50A  
D
5V  
0.7  
0.4  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
1
2
3
4
5
6
7
8
9
10  
11  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 50A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3
2.8  
2.6  
2.4  
2.2  
2
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
External Lead Current Limit  
T
J
= 125ºC  
1.8  
1.6  
1.4  
1.2  
1
T
J
= 25ºC  
0.8  
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXFN 100N50P  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
150  
135  
120  
105  
90  
T
J
= - 40ºC  
T
J
= 125ºC  
25ºC  
125ºC  
25ºC  
- 40ºC  
75  
60  
60  
45  
40  
30  
20  
15  
0
0
4
4.5  
5
5.5  
6
6.5  
7
7.5  
1.6  
40  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
V
= 250V  
DS  
I
I
= 50A  
D
G
= 10mA  
T
J
= 125ºC  
T
= 25ºC  
J
0
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
25  
50  
75  
100 125 150 175 200 225 250  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1,000  
100  
10  
f = 1 MHz  
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
1ms  
C
C
oss  
rss  
10ms  
DC  
T
= 150ºC  
= 25ºC  
J
T
C
1
0
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXFN 100N50P  
Fig. 13. Maximum Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
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