HiPerFETTM
Power MOSFETs
Q-Class
IXFH 80N10Q VDSS
= 100 V
= 80 A
IXFT 80N10Q
ID25
RDS(on) = 15 mW
trr £ 200ns
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Preliminary data
TO-247 AD (IXFH)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
100
100
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C
80
320
80
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-268 (IXFT) Case Style
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
1.5
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
G
S
(TAB)
PD
TC = 25°C
360
W
G = Gate
S = Source
D = Drain
TAB = Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
°C
Features
Md
Mountingtorque
(TO-247)
1.13/10 Nm/lb.in.
• IXYS advanced low gate charge
process
• Internationalstandardpackages
• Low gate charge and capacitance
- easier to drive
Weight
TO-247AD
TO-268
6
4
g
g
- faster switching
• Low RDS (on)
• Unclamped Inductive Switching (UIS)
rated
• Molding epoxies meet UL94V-0
flammabilityclassification
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 mA
VDS = VGS, ID = 4 mA
VGS = ±20 VDC, VDS = 0
100
2.0
V
V
4
±100
nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25
1
mA
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
15 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98592B(7/00)
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