IXFH69N30P
IXFT69N30P
Symbol
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
30
48
S
Ciss
Coss
Crss
4960
760
pF
pF
pF
∅ P
1
2
3
190
td(on)
tr
td(off)
tf
25
25
75
27
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 0.5 • VDSS, ID = 69A
RG = 4Ω (External)
e
Terminals: 1 - Gate
2 - Drain
Tab - Drain
Qg(on)
Qgs
156
32
nC
nC
nC
3 - Source
VGS = 10V, VDS = 0.5 • VDSS, ID = 34.5A
Dim.
Millimeter
Inches
Min. Max.
Qgd
79
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
RthJC
RthCS
0.25 °C/W
°C/W
TO-247
0.21
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
∅P 3.55
3.65
.140 .144
Symbol
Test Conditions
Characteristic Values
Q
5.89
6.40 0.232 0.252
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IS
VGS = 0V
69
A
A
V
TO-268 (IXFT) Outline
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
270
1.5
100
500
200 ns
IF = 25A, -di/dt = 100A/µs,
VR = 100V, VGS = 0V
QRM
nC
Note 1. Pulse test, t ≤ 300µs, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
