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IXFT23N60Q

型号：

IXFT23N60Q

描述：

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

580 K

下载PDF手册
HiPerFETTM  
PowerMOSFETs  
Q-Class  
IXFH 23N60Q  
IXFT 23N60Q  
VDSS  
ID25  
= 600 V  
23 A  
=
RDS(on) = 0.32 Ω  
trr ≤ 250ns  
N-ChannelEnhancementMode  
Avalanche Rated, High dv/dt,  
Low Gate Charge and Capacitances  
Preliminary Data Sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
T
= 25°C to 150°C  
600  
600  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
23  
92  
23  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-268 (IXFT) Case Style  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.5  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
,
15  
V/ns  
G
(TAB)  
S
PD  
TC = 25°C  
400  
W
G = Gate  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source  
Features  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
z
IXYS advanced low gate charge  
process  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-247AD  
TO-268  
6
4
g
g
z
z
International standard packages  
Low gate charge and capacitance  
- easier to drive  
- faster switching  
z
z
Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
Unclamped Inductive Switching (UIS)  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
rated  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = 30 VDC, VDS = 0  
600  
V
V
z
Molding epoxies meet UL 94 V-0  
flammability classification  
2.0  
4.5  
100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25 µA  
1
mA  
z
Easy to mount  
Space savings  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
0.32  
Ω
z
High power density  
© 2003 IXYS All rights reserved  
DS99055(06/03)  
IXFH 23N60Q  
IXFT 23N60Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
TO-247 AD Outline  
VDS = 10 V; ID = 0.5 ID25, pulse test  
10  
20  
S
Ciss  
Coss  
Crss  
3300  
410  
pF  
pF  
pF  
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz  
130  
td(on)  
tr  
td(off)  
tf  
20  
20  
45  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
RG = 1.5 Ω (External)  
Tab - Drain  
Dim.  
Millimeter  
Min.  
Inches  
Min. Max.  
Max.  
Qg(on)  
Qgs  
90  
20  
45  
nC  
nC  
nC  
A
A12  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
A
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
b
b12  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
b
RthJC  
RthCK  
0.31  
K/W  
K/W  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
(TO-247)  
0.25  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
19.81 20.32  
4.50  
.780 .800  
.177  
L1  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
4.32  
6.40 0.232 0.252  
Symbol  
IS  
TestConditions  
R
S
5.49  
.170 .216  
242 BSC  
6.15 BSC  
VGS = 0 V  
23  
92  
A
ISM  
Repetitive; pulse width limited by TJM  
A
V
TO-268 Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
trr  
QRM  
250  
ns  
µC  
A
IF = IS, -di/dt = 100 A/µs, VR = 100 V  
0.85  
8
IRM  
Min Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXFH 23N60Q  
IXFT 23N60Q  
Fig. 2. Extended Output Characteristics  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
@ 25 deg. C  
20  
17 . 5  
15  
48  
40  
32  
24  
16  
8
VGS = 10V  
9V  
VGS = 10V  
9V  
8V  
7V  
6V  
8V  
7V  
6V  
12 . 5  
10  
7.5  
5
5V  
2.5  
0
5V  
0
0
1
2
3
4
5
6
7
8
0
4
8
12  
16  
20  
24  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID25 Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
20  
17 . 5  
15  
3
VGS = 10V  
9V  
8V  
7V  
6V  
VGS = 10V  
2.5  
12 . 5  
10  
2
ID = 23A  
1. 5  
7.5  
5
5V  
ID= 11.5A  
1
2.5  
0
0.5  
0
3
6
9
12  
15  
18  
-50 -25  
0
25 50 75 100 125 150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID25  
Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
24  
20  
16  
12  
8
3
2.5  
2
VGS = 10V  
TJ= 125ºC  
1.5  
1
TJ = 25ºC  
40  
4
0
0.5  
-50 -25  
0
25 50 75 100 125 150  
0
10  
20  
30  
50  
ID - Amperes  
TC - Degrees Centigrade  
© 2003 IXYS All rights reserved  
IXFH 23N60Q  
IXFT 23N60Q  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
42  
36  
30  
24  
18  
12  
6
TJ = -40ºC  
25ºC  
125ºC  
TJ = -40ºC  
25ºC  
125ºC  
0
0
0
10  
20  
30  
40  
50  
60  
3.5  
4
4.5  
5
5.5  
6
6.5  
7
VGS - Volts  
ID - Amperes  
Fig. 9. Source Current vs. Source-To-Drain  
Voltage  
Fig. 10. Gate Charge  
60  
10  
VDS = 300V  
ID = 1 1. 5 A  
IG = 10mA  
50  
40  
30  
20  
10  
8
6
4
2
0
TJ = 125ºC  
TJ = 25ºC  
0
0.3  
0.5  
0.7  
0.9  
1.1  
0
20  
40  
60  
80  
100  
VSD - Volts  
QG - nanoCoulombs  
Fig. 12. Maximum T ransient T hermal  
Resistance  
Fig. 11. Capacitance  
1
10000  
10 0 0  
10 0  
f = 1M Hz  
C
C
iss  
0.1  
oss  
C
rss  
0.01  
1
10  
100  
1000  
0
5
10  
15  
20 25  
30 35 40  
Pulse Width - milliseconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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