SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
FZT605
ISSUE 4 - MARCH 2001
FEATURES
C
*
*
Guaranteed hFE Specified up to 2A
Fast Switching
E
PARTMARKING DETAIL -
COMPLEMENTARY TYPES - FZT705
FZT605
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
140
Collector-Emitter Voltage
Emitter-Base Voltage
120
V
10
V
Peak Pulse Current
4
A
Continuous Collector Current
Power Dissipation
IC
1.5
2
A
Ptot
W
°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
V(BR)CBO 140
V
IC=100µA
IC=10mA*
IE=100µA
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
V(BR)CEO
120
10
V
Emitter-Base Breakdown Voltage V(BR)EBO
V
Collector Cut-Off
Current
ICBO
0.01 µA
VCB=120V
10
0.1
10
VCB=120V,Tamb=100°C
µA
µA
µA
Emitter Cut-Off Current
IEBO
VEB=8V
Collector-Emitter Cut-Off Current ICES
VCES=120V
Collector-Emitter Saturation
Voltage
VCE(sat)
1.0,
1.5
V
V
IC=250mA, IB=0.25mA*
IC=1A, IB=1mA*
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
VBE(sat)
VBE(on)
hFE
1.8
1.7
V
V
IC=1A, IB=1mA*
IC=1A, VCE=5V*
Static Forward
Current Transfer Ratio
2K
IC=50mA, VCE=5V
IC=500mA, VCE=5V*
IC=1A, VCE=5V*
5K
2K
0.5K
100K
IC=2A, VCE=5V*
Transition Frequency
ft
150
MHz IC=100mA, VCE=10V
f=20MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
Cobo
ton
90 Typical pF
15 Typical pF
VEB=500mV, f=1MHz
VCB=10V, F=1MHz
0.5 Typical nsec IC=500mA, VCE=10V
B1=IB2=0.5mA
I
toff
1.6 Typical nsec
* Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%
Spice parameter data is available upon request for these devices.
TBA
