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Product specification
FZT458
Electrical Characteristics Ta = 25
Parameter
Breakdown Voltages
Breakdown Voltages
Breakdown Voltages
Symbol
V(BR)CBO
VCEO(sus)
V(BR)EBO
ICBO
Testconditons
Min
400
400
5
Max
Unit
V
IC=100ìA
IC=10mA*
IE=100ìA
VCB=320V
VCE=320V
VEB=4V
V
V
100
100
100
0.2
0.5
0.9
0.9
nA
nA
nA
V
Collector Cut-Off Currents
Emitter Cut-Off Current
ICES
IEBO
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
IC=50mA, IB=5mA*
IC=50mA, VCE=10V*
IC=1mA, VCE=10V
VCE(sat)
Emitter Saturation Voltages
V
VBE(sat)
VBE(on)
V
Base-Emitter Turn On Voltage
Static Forward Current Transfer Ratio
V
100
100
15
hFE
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
IC=10mA, VCE=20V,f=20MHz
VCB=20V, f=1MHz
300
Transition Frequency
fT
Cobo
ton
MHz
pF
Collector-Base Breakdown Voltage
5
135 Typical
IC=50mA, VCC=100V
IB1=5mA, IB2=-10mA
ns
Switching times
2260 Typical
toff
ns
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
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