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PXT3906

型号:

PXT3906

描述:

大电流(最大100 mA时)[ High current (max. 100 mA) ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

2 页

PDF大小:

139 K

Product specification  
PXT3906  
Features  
High current (max. 100 mA)  
Low voltage (max. 40 V).  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-40  
Unit  
V
-40  
V
-6  
V
-100  
-200  
-100  
mA  
mA  
mA  
Peak collector current  
Peak base current  
ICM  
IBM  
Ptot  
* 1  
* 2  
* 3  
0.45  
0.65  
0.8  
Total power dissipation  
W
Storage temperature  
Tstg  
Tj  
-65 to +150  
150  
Junction temperature  
Operating ambient temperature  
Ramb  
Rth(j-a)  
-65 to +150  
* 1  
* 2  
* 3  
278  
192  
156  
Thermal resistance from junction to ambient  
K/W  
K/W  
Thermal resistance from junction to soldering point  
Rth(j-s)  
80  
*1 Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard ---  
----footprint.  
*2 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting -  
- -pad for collector 1 cm2.  
*3 Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting --  
----pad for collector 6 cm2.  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  
Product specification  
PXT3906  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
Testconditons  
IE = 0; VCB = -30 V  
Min  
Typ  
Max  
-50  
Unit  
nA  
IEBO  
IC = 0; VEB = -6 V  
-50  
nA  
VCE = -1 V;IC = -0.1 Ma  
VCE = -1 V;IC = -1 mA  
VCE = -1 V, IC = -10 mA  
VCE = -1 V;IC = -50 mA  
VCE = -1 V;IC = -100 mA  
60  
80  
DC current gain  
hFE  
100  
60  
300  
30  
-250  
-400  
-850  
-950  
4.5  
mV  
mV  
mV  
mV  
pF  
IC = -10 mA; IB = -1 mA  
collector-emitter saturation voltage  
base-emitter saturation voltage  
VCEsat  
IC = -50 mA; IB = -5 mA  
-650  
250  
IC = -10 mA; IB = -1 mA  
VBEsat  
IC = -50 mA; IB = -5 mA  
Collector capacitance  
Emitter capacitance  
Transition frequency  
Cc  
Ce  
fT  
IE = iE = 0; VCB = -5 V; f = 1 MHz  
IC = iC = 0; VEB = -500 mV; f = 1 MHz  
IC = -10 mA; VCE = -20 V; f = 100 MHz  
10  
pF  
MHz  
IC = -100 ìA; VCE = -5 V; RS = 2 kÙ;  
f = 10 Hz to 15.7 kHz  
Noise figure  
Turn-on time  
Delay time  
Rise time  
F
ton  
td  
4
dB  
ns  
ns  
ns  
ns  
ns  
ns  
ICon = -10 mA; IBon = -1 mA;  
IBoff = 1 mA  
65  
35  
tr  
35  
Turn-off time  
Storage time  
Fall time  
toff  
300  
225  
75  
ts  
tf  
Marking  
Marking  
2A  
http://www.twtysemi.com  
2 of 2  
sales@twtysemi.com  
4008-318-123  
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