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IXGT32N90B2D1

型号：

IXGT32N90B2D1

描述：

HiPerFAST IGBT与二极管快[ HiPerFAST IGBT with Fast Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

225 K

下载PDF手册
Advance Technical Information  
HiPerFASTTM IGBT  
with Fast Diode  
VCES  
IC25  
= 900 V  
= 64 A  
IXGH 32N90B2D1  
IXGT 32N90B2D1  
VCE(sat) = 2.7 V  
tfityp  
= 150 ns  
B2-Class  
High Speed IGBTs with  
Ultrafast Diode  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 (IXGH)  
VCES  
VCGR  
TJ = 25°C to 150°C  
900  
900  
V
TJ = 25°C to 150°C; RGE = 1 MW  
V
TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
TO-268 (IXGT)  
IC25  
IC110  
ICM  
TC = 25°C  
64  
32  
A
A
A
TC = 110°C  
TC = 25°C, 1 ms  
200  
G
C (TAB)  
E
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 64  
A
(RBSOA)  
Clamped inductive load: VCL < 600V  
PC  
TC = 25°C  
300  
W
G = Gate  
C = Collector  
E = Emitter  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Features  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
• High frequency IGBT  
• High current handling capability  
• MOS Gate turn-on  
- drive simplicity  
Md  
Mounting torque (TO-247)  
1.13/10Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
• PFC circuits  
• Uninterruptible power supplies (UPS)  
• Switched-mode and resonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
VGE(th)  
ICES  
IC = 250 mA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
300  
1.5 mA  
μA  
TJ = 150°C  
TJ = 125°C  
Advantages  
IGES  
VCE = 0 V, VGE = ± 20 V  
IC = IC110, VGE = 15 V  
± 100  
2.7  
nA  
• High power density  
• Very fast switching speeds for high  
frequency applications  
VCE(sat)  
2.2  
2.1  
V
V
© 2005 IXYS All rights reserved  
DS99392(12/05)  
IXGH 32N90B2D1  
IXGT 32N90B2D1  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
TO-247 AD Outline  
IC = IC110 , VCE = 10 V  
18  
28  
S
Pulse test, t < 300 μs, duty cycle < 2 %  
∅ P  
Cies  
Coes  
Cres  
1790  
146  
49  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
89  
15  
34  
nC  
nC  
nC  
e
Qge  
Qgc  
IC = IC110 , VGE = 15 V, VCE = 0.5 VCES  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
20  
22  
ns  
ns  
Inductive load, TJ = 25°C  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC110 , VGE = 15 V  
260  
150  
2.2  
400 ns  
ns  
VCE = 720 V, RG = Roff = 5 Ω  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Eoff  
4.5 mJ  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
td(on)  
tri  
20  
22  
ns  
ns  
.780 .800  
.177  
Inductive load, TJ = 125°C  
IC = IC110 A, VGE = 15 V  
∅P 3.55  
Q
3.65  
.140 .144  
5.89  
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
3.8  
mJ  
ns  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
360  
330  
5.75  
VCE = 720 V, RG = Roff = 5 Ω  
ns  
Eoff  
mJ  
TO-268 Outline  
RthJC  
RthCS  
0.42 K/W  
K/W  
(TO-247)  
0.25  
Ultrafast Diode  
Symbol  
IF110  
Conditions  
Maximum Ratings  
27  
TC = 110°C  
A
Symbol  
Conditions  
Characteristic Values  
Min. Typ. Max.  
(TJ = 25°C unless otherwise specified)  
VF  
IF = 30 A;  
2.75  
V
V
TVJ = 125°C  
IF = 50 A; diF/dt = -100 A/μs; TVJ = 100°C  
1.9  
IRM  
trr  
5.5 11.4  
190  
A
ns  
VR = 100 V; VGE = 0 V  
RthJC  
RthCS  
0.9 K/W  
K/W  
0.25  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
IXGH 32N90B2D1  
IXGT 32N90B2D1  
Fig. 1. Output Characteristics  
@ 25  
Fig. 2. Extended Output Characteristics  
ºC  
@ 25 ºC  
70  
60  
50  
40  
30  
20  
10  
0
240  
200  
160  
120  
80  
V
GE  
= 15V  
V
= 15V  
13V  
GE  
13V  
11V  
11V  
9V  
7V  
9V  
7V  
40  
5V  
0
0
0
6
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
ºC  
70  
60  
50  
40  
30  
20  
10  
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
V
= 15V  
13V  
GE  
V
GE  
= 15V  
11V  
I
= 64A  
C
9V  
7V  
I
= 32A  
= 16A  
C
I
C
5V  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter voltage  
Fig. 6. Input Admittance  
6
5.5  
5
140  
120  
100  
80  
= 25ºC  
T
J
I
= 64A  
32A  
C
16A  
4.5  
4
3.5  
3
60  
T = 125ºC  
J
40  
25ºC  
-40ºC  
2.5  
2
20  
0
1.5  
4
5
6
7
8
9
10  
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2005 IXYS All rights reserved  
IXGH 32N90B2D1  
IXGT 32N90B2D1  
Fig. 8. Gate Charge  
Fig. 7. Transconductance  
16  
14  
12  
10  
8
35  
30  
25  
20  
15  
10  
5
VCE = 450V  
I C =32A  
I G = 10mA  
-40ºC  
=
T
J
25ºC  
12 5 ºC  
6
4
2
0
0
0
10 20 30 40 50 60 70 80 90 100  
0
20  
40  
60  
80  
100  
I C - Amperes  
Q G - nanoCoulombs  
Fig. 10. Reverse-Bias Safe  
Operating Area  
Fig. 9. Capacitance  
10000  
1000  
100  
70  
60  
50  
40  
30  
20  
10  
0
f = 1 MHz  
C
ies  
C
oes  
T = 125ºC  
J
R
=10Ω  
G
C
dV/dT < 10V/ns  
res  
10  
100 200 300 400 500 600 700 800 900  
0
5
10  
15  
20  
VC E - Volts  
25  
30  
35  
40  
VC E - Volts  
Fig. 11. Maximum Transient Thermal Resistance  
1
0.1  
0.01  
0.1  
1
10  
Pulse Width - milliseconds  
100  
1000  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH 32N90B2D1  
IXGT 32N90B2D1  
Fig. 13. Dependence of Turn-on  
Energy Loss on Gate Resistance  
Fig. 12. Dependence of Turn-off  
Energy Loss on Gate Resistance  
18  
16  
14  
12  
10  
8
16  
14  
12  
10  
8
º
T = 125 C  
J
I
= 64A  
C
V
= 15V  
GE  
CE  
I
= 64A  
= 32A  
º
T = 125 C  
J
C
V
= 720V  
V
= 15V  
GE  
CE  
V
= 720V  
I
= 32A  
C
6
I
C
6
4
4
2
2
I
= 16A  
I
= 16A  
C
C
0
0
0
5
10 15 20 25 30 35 40 45 50  
0
5
10 15 20 25 30 35 40 45 50  
R
- Ohms  
R
- Ohms  
G
G
Fig. 14. Dependence of Turn-off  
Energy Loss on Collector Current  
Fig. 15. Dependence of Turn-on  
Energy Loss on Collector Current  
16  
14  
12  
10  
8
9
8
7
6
5
4
3
2
1
0
R
=5Ω  
G
T = 125ºC  
J
R
=5Ω  
G
V
= 15V  
GE  
CE  
V
GE  
V
CE  
= 15V  
T = 125ºC  
J
V
= 720V  
= 720V  
T = 25ºC  
J
6
T = 25ºC  
J
4
2
0
10  
20  
30  
40  
50  
60  
70  
10  
20  
30  
40  
50  
60  
70  
I C - Amperes  
I C - Amperes  
Fig. 17. Dependence of Turn-on  
Energy Loss on Temperature  
Fig. 16. Dependence of Turn-off  
Energy Loss on Temperature  
16  
14  
12  
10  
8
10  
R
V
=5Ω  
Ω
= 5  
R
V
G
9
8
7
6
5
4
3
2
1
0
G
I
= 64A  
C
= 15V  
= 15V  
GE  
CE  
GE  
CE  
V
= 720V  
V
= 720V  
I
= 64A  
= 32A  
C
I
= 32A  
= 16A  
C
I
C
6
4
2
I
C
I
= 16A  
C
0
25 35 45 55 65 75 85 95 105 115 125  
25 35 45 55 65 75 85 95 105 115 125  
T - Degrees Centigrade  
J
T - Degrees Centigrade  
J
© 2005 IXYS All rights reserved  
IXGH 32N90B2D1  
IXGT 32N90B2D1  
Fig. 18. Dependence of Turn-off  
Switching Time on Gate Resistance  
Fig. 19. Dependence of Turn-on  
Switching Time on Gate Resistance  
550  
525  
500  
475  
450  
425  
400  
375  
350  
400  
390  
380  
370  
360  
350  
340  
330  
320  
45  
40  
35  
30  
25  
20  
15  
180  
150  
120  
90  
60  
30  
0
td(off)  
TJ = 125ºC, VGE = 15V  
CE = 720V  
tfi  
- - - - -  
td(on)  
tri  
- - - - -  
TJ = 125ºC, VGE = 15V  
VCE = 720V  
I
C
= 64A  
V
I
= 16A, 32A, 64A  
C
IC = 32A  
IC = 32A, 16A  
I
= 16A  
18  
C
4
6
8
10  
12  
R G - Ohms  
14  
16  
18 20  
4
6
8
10  
12  
- Ohms  
14  
16  
20  
R
G
Fig. 21. Dependence of Turn-on  
Switching Time on Collector Current  
Fig. 20. Dependence of Turn-off  
Switching Time on Collector Current  
500  
30  
10 0  
90  
80  
70  
60  
50  
40  
30  
20  
10  
td(off)  
RG  
tfi  
td(on)  
RG  
tri  
- - - - -  
- - - -  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
450  
400  
350  
300  
250  
200  
150  
100  
GE = 15V  
GE = 15V  
= 5Ω, V  
VCE = 720V  
= 5Ω, V  
VCE = 720V  
º
TJ = 125 C  
º
TJ = 125 C  
º
TJ = 25 C  
º
TJ = 25 C  
0
10  
20  
30  
40  
50  
60  
70  
15 20 25 30 35 40 45 50 55 60 65  
I C - Amperes  
I C - Amperes  
Fig. 22. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 23. Dependence of Turn-on  
Switching Time on Temperature  
400  
350  
300  
250  
200  
150  
100  
40  
15 0  
12 5  
10 0  
75  
50  
25  
0
td(on)  
RG  
tri  
- - - - -  
35  
30  
25  
20  
15  
10  
GE = 15V  
= 5Ω , V  
I
= 64A, 32A, 16A  
C
V
CE = 720V  
I
= 64A  
C
I
= 64A, 32A, 16A  
IC = 32A  
C
td(off)  
tfi  
- - - - -  
R
=5Ω , V  
= 15V  
G
GE  
V
= 720V  
CE  
I
= 16A  
C
25 35 45 55 65 75 85 95 105 115 125  
25 35 45 55 65 75 85 95 105 115 125  
T J - Degrees Centigrade  
T - Degrees Centigrade  
J
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXGH 32N90B2D1  
IXGT 32N90B2D1  
UltrafastDiodeCharateristicCurves  
70  
A
5
60  
A
TVJ=100°C  
VR = 600V  
TVJ=100°C  
VR = 600V  
μC  
60  
IF 50  
40  
50  
4
Qr  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
IF= 60A  
IF= 30A  
IF=15A  
40  
30  
20  
10  
0
3
2
1
0
TVJ=150°C  
TVJ=100°C  
30  
20  
TVJ=25°C  
10  
0
A/μs  
-diF/dt  
0
1
2
3
VF  
V
4
100  
1000  
0
200 400 600 1000  
A/μs  
-diF/dt  
Fig. 24. Forward current IF versus VF  
Fig. 25. Reverse recovery charge Qr  
versus -diF/dt  
Fig. 26. Peak reverse current IRM  
versus -diF/dt  
2.0  
220  
120  
1.2  
μs  
TVJ=100°C  
IF = 30A  
TVJ=100°C  
VR = 600V  
ns  
V
200  
VFR  
tfr  
tfr  
1.5  
Kf  
VFR  
trr  
80  
40  
0
0.8  
180  
160  
140  
120  
IF= 60A  
IF= 30A  
IF=15A  
1.0  
IRM  
0.4  
0.5  
Qr  
0.0  
0
A/μs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
C
A/μs  
diF/dt  
TVJ  
-diF/dt  
Fig. 27. Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 28. Recovery time trr versus -diF/dt  
Fig. 29. Peak forward voltage VFR and  
tfr versus diF/dt  
2
1
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
K/W  
1
2
3
0.465  
0.179  
0.256  
0.0052  
0.0003  
0.0397  
ZthJC  
0.1  
0.01  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 30. Transient thermal resistance junction to case  
© 2005 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXGA10N60 低VCE （ SAT ）的IGBT ，高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

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 		IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V（ BR ） CES | 20A I（C ） | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

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