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IXGT32N120A3

型号：

IXGT32N120A3

描述：

GenX3 1200V[ GenX3 1200V ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

202 K

下载PDF手册
GenX3TM 1200V  
IGBTs  
VCES = 1200V  
IC110 = 32A  
VCE(sat) ≤ 2.35V  
IXGH32N120A3  
IXGT32N120A3  
Ultra-Low Vsat PT IGBTs for  
up to 3 kHz Switching  
TO-268 (IXGT)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
V
E
TJ = 25°C to 150°C, RGE = 1MΩ  
C (Tab)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247 (IXGH)  
IC25  
IC110  
ICM  
TC = 25°C  
75  
32  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
230  
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
20  
A
C
C (Tab)  
E
120  
mJ  
SSOA  
(RBSOA)  
PC  
VGE= 15V, TJ = 125°C, RG = 20Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 150  
VCE ≤ 0.8 • VCES  
300  
A
G = Gate  
E = Emitter  
C
= Collector  
Tab = Collector  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
°C  
°C  
°C  
-55 ... +150  
Features  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
Optimized for Low Conduction Losses  
International Standard Packages  
TSOLD  
z
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6.0  
4.0  
g
g
Advantages  
z
High Power Density  
Low Gate Drive Requirement  
z
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1200  
3.0  
Typ.  
Max.  
z
Power Inverters  
Capacitor Discharge  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
z
z
5.0  
z
50 μA  
z
TJ = 125°C  
1 mA  
z
z
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z
z
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.35  
V
V
Lamp Ballasts  
z
Inrush Current Protection Circuits  
IC = 400A, VGE = 30V, Note 1  
11  
DS99608C(03/11)  
© 2011 IXYS CORPORATION, All rights Reserved  
IXGH32N120A3  
IXGT32N120A3  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 50A, VCE = 10V, Note 1  
VCE = 10V, VGE = 15V, Note 1  
14  
20  
S
A
IC(on)  
94  
Cies  
Coes  
Cres  
2150  
130  
14  
pF  
pF  
pF  
1
2
3
VCE = 25V, VGE = 0V, f = 1MHz  
Qg  
89  
15  
34  
nC  
nC  
nC  
Qge  
Qgc  
IC = 50A, VGE = 15V, VCE = 0.5 • VCES  
Terminals: 1 - Gate  
3 - Emitter  
2 - Collector  
td(on)  
tr  
td(off)  
tf  
39  
200  
ns  
ns  
ns  
ns  
Resistive Switching Times, TJ = 25°C  
VGE = 20V, VCE = 0.8 • VCES, IC = 100A  
RG = 10Ω (External)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
140  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
1240  
RthJC  
RthCK  
0.42 °C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
TO-247  
0.21  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
∅P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
TO-268 Outline  
Terminals: 1 - Gate  
3 - Emitter  
2, 4 - Collector  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXGH32N120A3  
IXGT32N120A3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
200  
180  
160  
140  
120  
100  
80  
250  
225  
200  
175  
150  
125  
100  
75  
VGE = 30V  
VGE = 30V  
25V  
25V  
20V  
20V  
15V  
10V  
15V  
10V  
60  
40  
50  
20  
25  
0
0
0
0
6
1
2
3
4
5
6
0
5
10  
15  
20  
150  
11  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
200  
180  
160  
140  
120  
100  
80  
6
5
4
3
2
1
0
VGE = 30V  
25V  
VGE = 15V  
20V  
I C = 192A  
15V  
10V  
I C = 96A  
60  
40  
I C = 32A  
20  
0
1
2
3
4
5
6
7
-50  
-25  
0
25  
50  
75  
100  
125  
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
10  
9
8
7
6
5
4
3
2
1
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = 25ºC  
25ºC  
125ºC  
I C = 150A  
100A  
50A  
8
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
3
4
5
6
7
8
9
10  
VGE - Volts  
VGE - Volts  
© 2011 IXYS CORPORATION, All rights Reserved  
IXGH32N120A3  
IXGT32N120A3  
Fig. 8. Dependence of BVCES & V(th)GE on  
Junction Temperature  
Fig. 7. Transconductance  
24  
20  
16  
12  
8
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
1.18  
1.15  
1.12  
1.09  
1.06  
1.03  
1.00  
0.97  
0.94  
0.91  
V(th)GE  
BVCES  
TJ = - 40ºC  
25ºC  
125ºC  
4
0
0
25  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
125  
90  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
Fig. 9. Single-Pulsed Avalanche Energy  
vs. Junction Temperature  
Fig. 10. Resistive Turn-on Rise Time  
vs. Gate Voltage  
140  
120  
100  
80  
1300  
1100  
900  
700  
500  
300  
100  
RG = 10Ω IC = 100A  
,
I C = 20A  
VGE = 15V  
V
CE = 960V  
60  
TJ = 125ºC  
40  
TJ = 25ºC  
12 14  
20  
35  
45  
55  
65  
75  
85  
95  
105  
115  
8
10  
16  
18  
20  
22  
24  
26  
28  
30  
VGE - Volts  
TJ - Degrees Centigrade  
Fig. 12. Capacitance  
Fig. 11. Gate Charge  
16  
14  
12  
10  
8
10,000  
1,000  
100  
= 1 MHz  
f
VCE = 600V  
I C = 50A  
I G = 10mA  
C
ies  
C
oes  
6
4
C
2
res  
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
10  
20  
30  
40  
50  
60  
70  
80  
QG - NanoCoulombs  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXGH32N120A3  
IXGT32N120A3  
Fig. 13. Resistive Turn-on Switching Times  
vs. Gate Resistance  
Fig. 14. Resistive Turn-on Rise Time  
vs. Junction Temperature  
420  
400  
380  
360  
340  
320  
300  
280  
260  
240  
220  
67  
64  
61  
58  
55  
52  
49  
46  
43  
40  
37  
340  
320  
300  
280  
260  
240  
220  
200  
180  
160  
RG = 10ꢀ, VGE = 20V  
CE = 960V  
t r  
t
d(on) - - - -  
V
TJ = 125ºC, VGE = 20V  
I C = 150A  
V
CE = 960V  
I C = 150A  
I C = 100A  
I C = 100A  
I C = 50A  
I C = 50A  
10  
14  
18  
22  
26  
30  
34  
38  
42  
46  
50  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on Rise Time  
vs. Collector Current  
Fig. 16. Resistive Turn-off Switching Times  
vs. Gate Resistance  
320  
300  
280  
260  
240  
220  
200  
180  
160  
1980  
1970  
1960  
1950  
1940  
1930  
1920  
1910  
1900  
1890  
500  
RG = 10ꢀ VGE = 20V  
,
450  
400  
350  
300  
250  
200  
150  
100  
50  
VCE = 960V  
I C = 50A, 100A, 150A  
TJ = 125ºC  
I C = 100A  
tf  
td(off  
) - - - -  
TJ = 25ºC  
TJ = 125ºC, VGE = 20V  
VCE = 960V  
60  
65  
70  
75  
80  
85  
90  
95  
100 105 110 115 120  
10  
15  
20  
25  
30  
RG - Ohms  
35  
40  
45  
50  
IC - Amperes  
Fig. 17. Resistive Turn-off Switching Times  
vs. Junction Temperature  
Fig. 18. Resistive Turn-off Switching Times  
vs. Collector Current  
2000  
1900  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
2000  
1900  
1800  
1700  
1600  
1500  
1400  
1300  
1200  
1100  
200  
190  
180  
170  
160  
150  
140  
130  
120  
110  
tf  
t
d(off) - - - -  
RG = 10ꢀ, VGE = 20V  
CE = 960V  
TJ = 125ºC  
V
tf  
RG = 10Ω, VGE = 20V  
CE = 960V  
td(off) - - - -  
V
I C = 150A, 100A, 50A  
TJ = 25ºC  
50  
60  
70  
80  
90  
100  
110  
120  
130  
140  
150  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
IC - Amperes  
© 2011 IXYS CORPORATION, All rights Reserved  
IXGH32N120A3  
IXGT32N120A3  
Fig. 19. Reverse-Bias Safe Operating Area  
160  
140  
120  
100  
80  
60  
40  
TJ = 125ºC  
G = 20ꢀ  
dv / dt < 10V / ns  
R
20  
0
200  
300  
400  
500  
600  
700  
800  
900  
1000  
1100  
1200  
VCE - Volts  
Fig. 20. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXG_32N120A3(4A)03-04-11-A  
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