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IXFV22N50P

型号：

IXFV22N50P

描述：

Polar功率MOSFET HiperFET[ Polar Power MOSFET HiPerFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

182 K

下载PDF手册
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 500V  
ID25 = 22A  
RDS(on) ≤ 270mΩ  
≤ 200ns  
IXFV22N50P  
IXFV22N50PS  
IXFH22N50P  
trr  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
PLUS220 (IXFV)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D
S
TJ = 25°C to 150°C  
500  
V
V
D (TAB)  
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
PLUS220SMD (IXFV_S)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
ID25  
IDM  
TC = 25°C  
22  
50  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
S
D (TAB)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
22  
750  
A
mJ  
TO-247 (IXFH)  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
10  
350  
V/ns  
W
TJ  
-55 ... +150  
150  
°C  
TJM  
Tstg  
°C  
D (TAB)  
= Drain  
-55 ... +150  
°C  
G = Gate  
D
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
S = Source TAB = Drain  
Md  
Mounting Torque (TO-247)  
Mounting Force (PLUS 220)  
1.13/10  
Nm/lb.in.  
N/lb.  
Features  
FC  
11..65/2.5..14.6  
z International Standard Packages  
z Avalanche Rated  
Weight  
TO-247  
PLUS 220 types  
6
4
g
g
z Fast Intrinsic Diode  
z Low Package Inductance  
Advantages  
z High Power Density  
z Easy to Mount  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
z Space Savings  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 2.5mA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
Applications  
5.5  
z Switched-Mode and Resonant-Mode  
Power Supplies  
± 100 nA  
IDSS  
15 μA  
250 μA  
z DC-DC Converters  
z Laser Drivers  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
270 mΩ  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
DS99358G(07/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFV22N50PS IXFV22N50P  
IXFH22N50P  
Symbol  
Test Conditions  
Characteristic Values  
PLUS220 (IXFV) Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
E
E1  
A
A1  
E1  
L2  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
12  
20  
S
Ciss  
Coss  
Crss  
2880  
310  
29  
pF  
pF  
pF  
D1  
D
L3  
L1  
td(on)  
tr  
td(off)  
tf  
22  
25  
72  
21  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
L
c
3X b  
A2  
2X e  
Qg(on)  
Qgs  
50  
16  
18  
nC  
nC  
nC  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
A
RthJC  
RthCS  
0.35 °C/W  
°C/W  
A1  
A2  
b
(TO-247 & PLUS220)  
0.25  
c
D
D1  
E
Source-Drain Diode  
E1  
e
L
L1  
L2  
L3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
22  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
88  
TO-247 (IXFH) Outline  
1.5  
trr  
200 ns  
IF = 22A, -di/dt = 100A/μs  
QRM  
IRM  
0.7  
μC  
VR = 100V, VGS = 0V  
∅ P  
7.0  
A
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
PLUS220SMD (IXFV_S) Outline  
e
A
A1  
E
E1  
E1  
L2  
A
Dim.  
Millimeter  
Inches  
A1  
A2  
A3  
b
c
D
D1  
E
E1  
e
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
D
A3  
L4  
L3  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
L
L1  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
2X b  
c
20.80 21.46  
15.75 16.26  
e
A2  
L
e
L
L1  
5.20  
5.72 0.205 0.225  
L1  
L2  
L3  
L4  
19.81 20.32  
4.50  
.780 .800  
.177  
∅P 3.55  
3.65  
.140 .144  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
TAB - Drain  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFV22N50PS IXFV22N50P  
IXFH22N50P  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
Fig. 1. Output Characteristics  
@ 25ºC  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
22  
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
7V  
6V  
6V  
6
4
5V  
5V  
2
0
0
0
1
2
3
4
5
6
7
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 3. Output Characteristics  
@ 125ºC  
Fig. 4. RDS(on) Normalized to ID = 11A Value  
vs. Junction Temperature  
22  
20  
18  
16  
14  
12  
10  
8
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
7V  
VGS = 10V  
6V  
I D = 22A  
I D = 11A  
6
5V  
4
2
0
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 11A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
24  
20  
16  
12  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
4
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXFV22N50PS IXFV22N50P  
IXFH22N50P  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
0
0
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
0
4
8
12  
16  
20  
24  
28  
32  
36  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 250V  
I
I
D = 11A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
10,000  
1,000  
100  
100.0  
10.0  
1.0  
= 1 MHz  
f
RDS(on) Limit  
25µs  
C
100µs  
iss  
C
oss  
rss  
1ms  
TJ = 150ºC  
C = 25ºC  
Single Pulse  
T
10ms  
C
DC  
100ms  
10  
0.1  
0
5
10  
15  
20  
25  
30  
35  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFV22N50PS IXFV22N50P  
IXFH22N50P  
Fig. 13. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_22N50P(63)07-22-09-B  
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