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ZXTN649F

型号:

ZXTN649F

描述:

NPN低VCE ( sat)的晶体管SOT- 23[ NPN LOW VCE(sat) TRANSISTOR IN SOT-23 ]

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

122 K

A Product Line of  
Diodes Incorporated  
ZXTN649F  
NPN LOW VCE(sat) TRANSISTOR IN SOT-23  
Features  
Mechanical Data  
Case: SOT-23  
BVCEO > 25V  
BVCBO > 35V  
IC(cont) = 3A Continuous Currrent  
Case material: molded Plastic. “Green” molding Compound.  
UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Matte Tin Finish  
V
R
CE(sat) < 120mV @ 1A  
CE(sat) = 77 m  
PD = 0.725W  
6A Peak Pulse Current  
25V Forward Blocking Voltage  
Complementary part number ZXTP749F  
Lead, Halogen and Antimony Free, RoHS Compliant  
(Note 1)  
Weight: 0.008 grams (approximate)  
“Green” Devices (Note 2)  
Applications  
MOSFET gate drivers  
Power switches  
Motor control  
SOT-23  
Top View  
Device symbol  
Pin Configuration  
Ordering Information  
Product  
Marking  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
ZXTN649FTA  
1N7  
7
8mm  
3000  
Notes:  
1. No purposefully added lead. Halogen and Antimony Free.  
2. Diodes Inc.‘s “Green” Policy can be found on our website at http://www.diodes.com  
Marking Information  
1N7 = Product type Marking Code  
1 of 7  
www.diodes.com  
October 2009  
© Diodes Incorporated  
ZXTN649F  
Document Number DS31900 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
NPN LOW VCE(sat) TRANSISTOR IN SOT-23  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
35  
25  
7
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Continuous Collector Current (Note 3)  
Peak Pulse Current  
3
A
6
A
ICM  
Base Current  
500  
mA  
IB  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
725  
Unit  
mW  
Power Dissipation at TA = 25°C (Note 4)  
PD  
172  
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C  
Thermal Resistance, Junction to Lead @ TA = 25°C  
Operating and Storage Temperature Range  
°C/W  
Rθ  
JA  
79  
°C/W  
°C  
Rθ  
JL  
-55 to +150  
TJ, TSTG  
Notes:  
3. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions  
4. For device mounted on FR4 PCB measured at t 2 Secs.  
2 of 7  
www.diodes.com  
October 2009  
© Diodes Incorporated  
ZXTN649F  
Document Number DS31900 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
NPN LOW VCE(sat) TRANSISTOR IN SOT-23  
Thermal Characteristics and Derating information  
3 of 7  
www.diodes.com  
October 2009  
© Diodes Incorporated  
ZXTN649F  
Document Number DS31900 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
NPN LOW VCE(sat) TRANSISTOR IN SOT-23  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
Min  
35  
25  
7
Typ  
110  
35  
Max  
Unit  
V
Test Condition  
IC = 100 µA  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 5)  
Emitter-Base Breakdown Voltage  
V
IC = 10 mA  
IE = 100 µA  
8.1  
V
V
CB = 28V  
50  
0.5  
nA  
µA  
Collector Cutoff Current  
Emitter Cutoff Current  
< 1  
< 1  
ICBO  
IEBO  
VCB = 28V, Tamb=100 °C  
VEB = 5.6V  
50  
nA  
I
I
C = 100mA, VCE = 2V  
C = 1A, VCE = 2V  
200  
175  
155  
50  
320  
280  
250  
85  
500  
Static Forward Current Transfer Ratio (Note 5)  
hFE  
IC = 2A, VCE = 2V  
I
I
IC = 3A, IB = 300mV  
IC = 1A, VCE = 2V  
IC = 1A, IB = 100mV  
C = 6A, VCE = 2V  
C =1A, IB = 100mV  
70  
200  
120  
300  
mV  
mV  
Collector-Emitter Saturation Voltage (Note 5)  
VCE(sat)  
Base-Emitter Turn-On Voltage (Note 5)  
Base-Emitter Saturation Voltage (Note 5)  
780  
900  
850  
mV  
mV  
VBE(on)  
VBE(sat)  
1000  
Notes:  
5. Measured under pulsed conditions. Pulse width 300 µs. Duty cycle 2%  
4 of 7  
www.diodes.com  
October 2009  
© Diodes Incorporated  
ZXTN649F  
Document Number DS31900 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
NPN LOW VCE(sat) TRANSISTOR IN SOT-23  
Typical Characteristics  
5 of 7  
www.diodes.com  
October 2009  
© Diodes Incorporated  
ZXTN649F  
Document Number DS31900 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
NPN LOW VCE(sat) TRANSISTOR IN SOT-23  
Package Outline Dimensions  
A
SOT-23  
Dim  
A
B
C
D
F
G
H
J
K
Min  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013 0.10  
0.903 1.10  
-
0.45  
0.085 0.18  
0° 8°  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
C
B
2.05  
3.00  
1.83  
2.90  
0.05  
1.00  
0.400  
0.55  
0.11  
-
H
G
M
K
J
K1  
D
K1  
L
M
-
F
L
0.61  
α
All Dimensions in mm  
Suggested Pad Layout  
Y
Dimensions Value (in mm)  
Z
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
C
E
X
6 of 7  
www.diodes.com  
October 2009  
© Diodes Incorporated  
ZXTN649F  
Document Number DS31900 Rev. 2 - 2  
A Product Line of  
Diodes Incorporated  
ZXTN649F  
NPN LOW VCE(sat) TRANSISTOR IN SOT-23  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR  
PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other  
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising  
out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under  
its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such  
applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are  
represented on Diodes Incorporated website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales  
channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall  
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising  
out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and  
markings noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the  
express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in  
the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,  
and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their  
products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-  
or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes  
Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life  
support devices or systems.  
Copyright © 2009, Diodes Incorporated  
www.diodes.com  
7 of 7  
www.diodes.com  
October 2009  
© Diodes Incorporated  
ZXTN649F  
Document Number DS31900 Rev. 2 - 2  
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