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IXFT80N15Q

型号:

IXFT80N15Q

描述:

HiPerFET功率MOSFET Q系列[ HiPerFET Power MOSFETs Q-Class ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

127 K

HiPerFETTM  
Power MOSFETs  
Q-Class  
VDSS = 150  
ID25 = 80  
V
A
IXFH 80N15Q  
IXFK 80N15Q  
IXFT 80N15Q  
RDS(on) = 22.5 mW  
£ 200 ns  
trr  
N-ChannelEnhancementMode  
AvalancheRated, Highdv/dt, LowQg  
Preliminary data sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
150  
150  
V
V
(TAB)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
80  
320  
80  
A
A
A
TO-268 (D3) ( IXFT)  
G
(TAB)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
45  
1.5  
mJ  
J
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
5
V/ns  
TO-264 AA (IXF
PD  
TC = 25°C  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
S
D (TAB)  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
°C  
G = Gate  
S = Source  
Md  
Mounting torque  
TO-247  
TO-264  
1.13/10 Nm/lb.in.  
0.9/6 Nm/lb.in.  
TAB = Drain  
Weight  
Symbol  
TO-247  
TO-264  
TO-268  
6
10  
4
g
g
g
Features  
l Low gate charge  
l International standard packages  
TestConditions  
Characteristic Values  
l
Epoxy meet UL 94 V-0, flammability  
(TJ = 25°C, unless otherwise specified)  
classification  
min. typ. max.  
l Low RDS (on) HDMOSTM process  
l Rugged polysilicon gate cell structure  
l Avalanche energy and current rated  
l Fast intrinsic Rectifier  
VDSS  
VGS = 0 V, ID = 250 uA  
VDS = VGS, ID = 4 mA  
150  
2.0  
V
V
VGS(th)  
4.0  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
25 mA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
1
mA  
l
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
22.5 mW  
l
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
l
© 2000 IXYS All rights reserved  
98725 (05/31/00)  
IXFH 80N15Q IXFK 80N15Q  
IXFT 80N15Q  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-247 AD (IXFH) Outline  
min. typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
35  
50  
S
1
2
3
Ciss  
Coss  
Crss  
4500  
1400  
680  
pF  
pF  
pF  
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
td(on)  
tr  
td(off)  
tf  
30  
55  
68  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Dim.  
Millimeter  
Inches  
RG = 2.0 W (External),  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
Qg(on)  
Qgs  
180  
39  
nC  
nC  
nC  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
85  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
RthJC  
0.35 K/W  
e
L
L1  
5.20  
19.81  
5.72  
20.32  
4.50  
0.205  
.780  
0.225  
.800  
.177  
RthCK  
TO-247  
TO-264  
0.25  
0.15  
K/W  
K/W  
ÆP  
Q
3.55  
5.89  
3.65  
6.40  
.140  
0.232  
.144  
0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170  
242 BSC  
.216  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
TO-264 AA Outline  
Symbol  
IS  
TestConditions  
min%  
typ% max%  
VGS = 0 V  
80  
A
A
ISM  
Repetitive; pulse width limited by TJM  
320  
1&5  
VSD  
IF = IS, VGS = 0 V,  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
QRM  
IRM  
200  
ns  
mC  
A
1&2  
10  
IF = IS -di/dt = 100 A/ms, VR = 100 V  
Millimeter  
Dim.  
Inches  
Max.  
.202  
Min.  
Max.  
Min.  
.190  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
A1  
A2  
.100  
.079  
.114  
.083  
TO-268 Outline  
b
b1  
b2  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
c
D
0.53  
25.91  
19.81  
5.46BSC  
0.00  
0.00  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.215BSC  
.000  
.000  
.033  
1.030  
.786  
E
e
J
0.25  
0.25  
.010  
.010  
K
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensionsꢀ  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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