Advance Technical Information
HiPerFETTM
Power MOSFETs
IXFX 120N25
IXFK 120N25
VDSS = 250 V
ID25 = 120 A
RDS(on) = 22 mΩ
Single MOSFET Die
t ≤ 250 ns
rr
PLUS247TM (IXFX)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
250
250
V
V
(TAB)
G
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
ID104
IDM
TC = 25°C (MOSFET chip capability)
TC = 104°C (External lead capability)
TC = 25°C, pulse width limited by TJM
TC = 25°C
120
75
480
90
A
TO-264AA(IXFK)
A
A
A
IAR
G
(TAB)
D
S
EAR
EAS
TC = 25°C
TC = 25°C
64
3
mJ
J
G = Gate
S = Source
D = Drain
TAB = Drain
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TJ
TC = 25°C
560
W
-55 ... +150
°C
Features
l
International standard packages
Low RDS (on) HDMOSTM process
TJM
Tstg
150
-55 ... +150
°C
°C
l
l
l
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mountingtorque
TO-264
0.7/6 Nm/lb.in.
l
l
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Weight
PLUS 247
TO-264
6
10
g
g
Applications
l
DC-DC converters
l
Battery chargers
Symbol
VDSS
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l
Switched-mode and resonant-mode
power supplies
min. typ. max.
l
DC choppers
VGS = 0 V, ID = 1mA
250
2.0
V
l
AC motor control
l
Temperature and lighting controls
VGS(th)
IGSS
VDS = VGS, ID = 8mA
4.0 V
VGS = ±20 V, VDS = 0
±200 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
3 mA
l
PLUS 247TM package for clip or spring
mounting
l
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
22 mΩ
Space savings
l
High power density
98912 (2/02)
© 2002 IXYS All rights reserved
