IXFR 24N50Q
IXFR 26N50Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
VDS = 15 V; ID = IT
Note 1
14
24
S
Ciss
Coss
Crss
3900
500
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
130
td(on)
tr
td(off)
tf
28
30
55
16
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External),
Qg(on)
Qgs
95
27
40
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Qgd
RthJC
RthCK
0.50 K/W
K/W
0.15
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
26
A
A
ISM
Repetitive; pulse width limited by TJM
104
VSD
IF = IS, VGS = 0 V, Note 1
1.3
V
trr
TJ = 25°C
250
ns
QRM
TJ = 25°C
0.85
8
1.5 µC
IF = Is, -di/dt = 100 A/µs,
VR = 100 V
IRM
TJ = 25°C
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current:
IXFR26N50Q
IXFR24N50Q
IT = 13A
IT = 12A
3. See IXFH26N50Q data sheet for characteristic curves.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
