Advanced Technical Information
HiPerFETTM Power MOSFETs
ISOPLUS247TM
VDSS
ID25
RDS(on)
IXFR 26N50
IXFR 24N50
500V
500V
24 A
22 A
0.20 W
0.23 W
(Electrically Isolated Back Surface)
trr £ 250 ns
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
ISOPLUS 247TM
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
G
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
Isolated back surface*
D = Drain
ID25
IDM
IAR
TC = 25°C
26N50
24N50
26N50
24N50
26N50
24N50
26
24
104
96
26
24
A
A
A
A
A
A
G = Gate
S = Source
TC = 25°C, Pulse width limited by TJM
TC = 25°C
*Patentpending
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
V/ns
Features
PD
TC = 25°C
250
W
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electricalisolation
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• Low drain to tab capacitance(<50pF)
TL
1.6 mm (0.062 in.) from case for 10 s
300
2500
6
°C
V~
g
• Low R
HDMOSTM process
• RuggeDdSp(oon)lysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
VISOL
Weight
50/60 Hz, RMS
t = 1 minute leads-to-tab
• Fast intrinsic Rectifier
Applications
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
• AC motor control
min. typ. max.
VGS = 0 V, ID = 250uA
500
2
V
VGS(th)
IGSS
VDS = VGS, ID = 4mA
4
V
VGS = ±20 VDC, VDS = 0
±100
nA
Advantages
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
200
1
mA
mA
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = IT
Notes 1 & 2
26N50
24N50
0.20
0.23
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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