IXGH 20N60BD1
IXGT 20N60BD1
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD (IXGH) Outline
IC = IC90; VCE = 10 V,
9
17
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Cies
Coes
Cres
1500
150
40
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
55
12
20
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim. Millimeter
Inches
Min. Max. Min. Max.
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
15
25
ns
ns
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
IC = IC90, VGE = 15 V, L = 100 mH,
VCE = 0.8 VCES, RG = Roff = 10 W
110
100
0.7
200 ns
150 ns
1.0 mJ
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
E
F
4.32 5.49 0.170 0.216
Eoff
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
td(on)
tri
15
35
ns
ns
-
4.5
-
0.177
Inductive load, TJ = 125°C
J
K
1.0
1.4 0.040 0.055
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = Roff = 10 W
10.8 11.0 0.426 0.433
Eon
td(off)
tfi
0.75
220
140
1.2
mJ
ns
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
N
1.5 2.49 0.087 0.102
ns
Eoff
mJ
TO-268AA (D3 PAK)
RthJC
RthCK
0.83 K/W
K/W
TO-247
0.25
Reverse Diode (FRED)
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 30A, VGE = 0 V,
TJ = 150°C
1.6
2.5
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 % TJ = 25°C
IRM
trr
IF = 30A, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V
6
100
25
A
ns
ns
TJ =100°C
TJ = 25°C
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
RthJC
1.0 K/W
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
Min. Recommended Footprint
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
.75
.83
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
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