IXGH 15N120B
IXGT 15N120B
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TO-247 AD Outline
IC = IC90; V = 10 V,
12
15
S
Pulse test, t C≤E 300 µs, duty cycle ≤ 2 %
∅ P
Cies
Coes
Cres
1720
95
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
35
Qg
Qge
Qgc
69
13
26
nC
nC
nC
e
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A12
4.7
2.2
2.2
1.0
1.65
2.87
5.3
2.54
2.6
1.4
2.13
3.12
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
A
td(on)
tri
td(off)
tfi
25
15
180
160
1.75
ns
ns
280 ns
320 ns
3.0 mJ
Inductive load, TJ = 25°C
IC = IC90, V = 15 V
b
V
CE = 0.8 GVECES, RG = Roff = 10 Ω
b
b12
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
C
D
E
.4
.8
,
20.80 21.46
Eoff
15.75 16.26
e
5.20
5.72 0.205 0.225
td(on)
tri
Eon
td(off)
tfi
25
18
0.60
300
360
ns
ns
mJ
ns
ns
L
19.81 20.32
.780 .800
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 10 Ω
L1
4.50
3.65
.177
∅P 3.55
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
R
5.49
.170 .216
S
6.15 BSC
242 BSC
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES
,
higher TJ or increased RG
Eoff
3.5
mJ
TO-268 Outline
RthJC
RthCK
0.83 K/W
K/W
(TO-247)
0.25
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
Min Recommended Footprint
A1
A2
b
1.15
1.9
.4
1.45
.045 .057
b2
C
2.1
.75
.83
.65
.016 .026
D
13.80 14.00
.543 .551
.624 .632
.524 .535
E
15.85 16.05
E1
13.3
13.6
e
H
L
5.45 BSC
.215 BSC
.736 .752
.094 .106
18.70 19.10
2.40
1.20
2.70
1.40
L1
.047 .055
L2
L3
L4
1.00
1.15
.039 .045
.010 BSC
0.25 BSC
3.80
4.10
.150 .161
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
