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IXGQ20N120B

型号：

IXGQ20N120B

描述：

高电压IGBT与二极管[ High Voltage IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

599 K

下载PDF手册
High Voltage IGBT with Diode  
VCES  
IC25  
= 1200 V  
= 40 A  
IXGQ 20N120B  
IXGQ 20N120BD1  
VCE(sat) = 3.4 V  
tfi(typ)  
= 160 ns  
BD1  
TO-3P(IXGQ)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
40  
20  
100  
A
A
A
C
E
(TAB)  
G = Gate  
C = Collector  
SSOA  
V
= 15 V, TJ = 125°C, RG = 10 Ω  
ICM = 40  
A
CGlaE mped inductive load  
@0.8 VCES  
E = Emitter  
TAB = Collector  
(RBSOA)  
PC  
TC = 25°C  
190  
W
Features  
z
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
International standard package  
IGBT and anti-parallel FRED for  
resonant power supplies  
- Induction heating  
z
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
- Rice cookers  
z
z
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
Fast Recovery Expitaxial Diode (FRED)  
- soft recovery with low IRM  
Weight  
6
g
Advantages  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
Saves space (two devices in one  
package)  
z
Easy to mount with 1 screw  
(isolated mounting screw hole)  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
2.5  
5.0  
V
z
Reduces assembly time and cost  
VCE = V  
20N120B  
25 µA  
50 µA  
VGE = 0CVES  
20N120BD1  
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
VCE(sat)  
IC  
= 20A, VGE = 15 V  
2.9  
2.8  
3.4  
V
V
Note 2  
TJ=125°C  
© 2003 IXYS All rights reserved  
DS99136(12/03)  
IXGQ 20N120B  
IXGQ 20N120BD1  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-3P (IXGQ) Outline  
gfs  
IC = 20A; VCE = 10 V,  
Note 2.  
12  
16  
S
Cies  
1700  
70  
pF  
pF  
pF  
pF  
20N120B  
20N120BD1  
Coes  
Cres  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
80  
23  
Qg  
Qge  
Qgc  
62  
9
24  
nC  
nC  
nC  
IC = 20A, VGE = 15 V, VCE = 0.5 VCES  
td(on)  
tri  
20  
14  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 20 A; VGE = 15 V  
td(off)  
V
CE = 0.8 VCES; RG = Roff = 10 Ω  
270  
160  
2.1  
380 ns  
320 ns  
3.5 mJ  
Note 1.  
tfi  
Eoff  
td(on)  
tri  
Eon  
td(off)  
25  
18  
1.4  
270  
360  
4.5  
ns  
ns  
mJ  
ns  
Inductive load, TJ = 125°C  
IC = 20A; VGE = 15 V  
VCE = 0.8 VCES; RG = Roff = 10 Ω  
Note 1  
tfi  
ns  
Eoff  
mJ  
RthJC  
RthCK  
0.65 K/W  
K/W  
(TO-247)  
0.25  
ReverseDiode(FRED)  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
TestConditions  
IF  
TC = 90°C  
10  
A
V
VF  
IF = 10 A, VGE = 0 V  
3.3  
IRM  
trr  
IF = 10 A; -di /dt = 400 A/µs, VR = 600 V  
VGE = 0 V; TJF= 125°C  
14  
A
120  
ns  
trr  
IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V  
40  
ns  
RthJC  
2.5 K/W  
Notes: 1.  
2.  
Switching times may increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased R .  
,
Pulse test, t ≤ 300 µs, duGty cycle d ≤ 2 %  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGQ 20N120B  
IXGQ 20N120BD1  
Fig. 1. Output Characteristics  
@ 25 Deg. C  
Fig. 2. Extended Output Characteristics  
@ 25 deg. C  
40  
35  
30  
25  
20  
15  
10  
5
160  
140  
120  
100  
80  
VGE = 15V  
13V  
VGE = 15V  
13V  
11V  
9V  
11V  
9V  
7V  
5V  
60  
40  
7V  
5V  
20  
0
0
0.5  
0.5  
6
1
1.5  
2
2.5  
3
3.5  
4
4.5  
0
-50  
4
2
4
6
8
10 12 14 16 18 20  
VC E - Volts  
VC E - Volts  
Fig. 3. Output Characteristics  
@ 125 Deg. C  
Fig. 4. Dependence of VCE(sat) on  
Temperature  
40  
35  
30  
25  
20  
15  
10  
5
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 15V  
13V  
VGE = 15V  
11V  
9V  
IC = 40A  
IC = 20A  
IC = 10A  
7V  
5V  
0
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-25  
0
25  
50  
75  
100 125 150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emiiter voltage  
Fig. 6. Input Admittance  
60  
50  
40  
30  
20  
10  
0
6.5  
6
TJ = 25ºC  
5.5  
5
IC = 40A  
20A  
4.5  
4
10A  
3.5  
3
TJ = 125ºC  
25ºC  
2.5  
2
-40ºC  
1.5  
5
6
7
8
9
7
8
9
10 11 12 13 14 15 16 17  
VG E - Volts  
VG E - Volts  
© 2003 IXYS All rights reserved  
IXGQ 20N120B  
IXGQ 20N120BD1  
Fig. 8. Dependence of Turn-off  
Energy Loss on RG  
Fig. 7. Transconductance  
24  
21  
18  
15  
12  
9
16  
14  
12  
10  
8
TJ = 125ºC  
TJ = -40ºC  
VGE = 15V  
VCE = 960V  
25ºC  
125ºC  
IC = 40A  
IC = 20A  
6
6
4
3
2
IC = 10A  
110  
0
0
0
10  
20  
30  
40  
50  
60  
10  
30  
50  
70  
90  
130  
150  
I C - Amperes  
R G - Ohms  
Fig. 9. Dependence of Turn-Off  
Energy Loss on Ic  
Fig. 10. Dependence of Turn-off  
Energy Loss on Temperature  
14  
12  
10  
8
14  
12  
10  
8
RG = 10Ω  
RG = 100Ω - - -  
VGE = 15V  
VCE = 960V  
TJ = 125ºC  
RG = 10Ω  
RG = 100Ω - - -  
VGE = 15V  
IC = 40A  
VCE = 960V  
TJ = 125ºC  
6
6
IC = 20A  
IC = 10A  
4
4
TJ = 25ºC  
2
2
0
0
25 35 45 55 65 75 85 95 105 115 125  
10  
15  
20  
25  
30  
35  
40  
I C - Amperes  
TJ - Degrees Centigrade  
Fig. 11. Dependence of Turn-off  
Switching Time on RG  
Fig. 12. Dependence of Turn-off  
Switching Time on Ic  
1400  
1200  
1000  
800  
550  
500  
450  
400  
350  
300  
250  
200  
td(off)  
tfi  
td(off)  
- - - - - -  
tfi  
- - - - - -  
TJ = 125ºC  
VGE = 15V  
VCE = 960V  
RG = 10Ω  
VGE = 15V  
VCE = 960V  
TJ = 125ºC  
IC = 10A  
IC = 40A  
600  
400  
TJ = 25ºC  
IC = 20A  
70  
200  
10  
30  
50  
90  
110  
130  
150  
10  
15  
20  
25  
30  
35  
40  
R G - Ohms  
I C - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
IXGQ 20N120B  
IXGQ 20N120BD1  
Fig. 13. Dependence of Turn-off  
Switching Time on Temperature  
Fig. 14. Gate Charge  
500  
450  
400  
350  
300  
250  
200  
15  
12  
9
td(off)  
VCE = 600V  
IC = 40A  
IC = 20A  
tfi  
- - - - - -  
IG = 10mA  
RG = 10Ω  
VGE = 15V  
VCE = 960V  
IC = 10A  
IC = 40A  
IC = 20A  
6
3
0
25 35 45 55 65 75 85 95 105 115 125  
0
10  
20  
30  
40  
50  
60  
70  
TJ - Degrees Centigrade  
Q G - nanoCoulombs  
Fig. 15. Capacitance  
10000  
1000  
100  
f = 1 MHz  
C
ies  
C
oes  
C
res  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VC E - Volts  
Fig. 16. Maximum Transient Thermal Resistance  
1.0  
0.5  
0.1  
1
10  
100  
1000  
Pulse Width - milliseconds  
© 2003 IXYS All rights reserved  
IXGQ 20N120B  
IXGQ 20N120BD1  
30  
A
2000  
40  
A
T = 100°C  
VVRJ= 600V  
T = 100°C  
VVRJ= 600V  
nC  
25  
1500  
30  
IF  
IRM  
Qr  
I = 20A  
IFF= 5A  
IF= 10A  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
I = 20A  
IF= 10A  
IFF= 5A  
1000  
500  
0
20  
10  
0
TVJ= 25°C  
0
A/µs  
0
1
2
3
4 V  
100  
1000  
0
200 400 600 800 1000  
-diF/dt  
A/µs  
-diF/dt  
VF  
Fig. 17 Forward current IF versus VF  
2.0  
Fig. 18 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 19 Peak reverse current IRM  
versus -diF/dt  
150  
120  
1.2  
µs  
T = 100°C  
T = 100°C  
VVRJ= 600V  
IFVJ = 10A  
ns  
V
140  
VFR  
tfr  
trr  
tfr  
1.5  
Kf  
VFR  
130  
80  
40  
0
0.8  
I = 20A  
IF= 10A  
120  
1.0  
IRM  
IFF= 5A  
110  
0.4  
0.5  
Qr  
100  
90  
0.0  
0.0  
A/µs  
0
40  
80  
120  
160  
0
200 400 600 1000  
0
200 400 600 1000  
diF/dt  
°C  
A/µs  
TVJ  
-diF/dt  
Fig. 20 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 21 Recovery time trr versus -diF/dt  
Fig. 22 Peak forward voltage VFR and  
tfr versus diF/dt  
10  
K/W  
Constants for ZthJC calculation:  
i
Rthi (K/W)  
ti (s)  
1
1
2
3
1.449  
0.558  
0.493  
0.0052  
0.0003  
0.017  
ZthJC  
0.1  
0.01  
DSEP 8-12A  
0.001  
s
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 23 Transient thermal resistance junction to case  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered byoneormore  
ofthefollowingU.S.patents:  
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1  
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343  
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