IXGP 2N100
IXGP 2N100A
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
TO-220 Outline
(TJ = 25°C unless otherwise specified)
gfs
IC = IC90, VCE = 10 V,
0.7
1.5
S
Pulse test, t < 300 µs, duty cycle < 2 %
Cies
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz
101
12
pF
pF
pF
1.8
Qg
IC = Ic90, VGE = 15 V, VCE = 0.5 VCES
7.8
1.5
4.2
nC
nC
nC
Qge
Qgc
td(on)
tri
td(off)
tfi
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V
RG = 150 W
15
ns
n s
ns
ns
ns
20
300 600
560 1000
180 360
VCLAMP = 0.8 VCES
IXGP2N100
IXGP2N100A
IXGP2N100
IXGP2N100A
Eoff
Note 1
0.56 1.2 mJ
0.26 0.6 mJ
td(on)
tri
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V
RG = R(off) = 150 W
15
25
ns
n s
E
0.3
mJ
(on)
td(off)
tfi
VCLAMP = 0.8 VCES
400
800
360
1.0
ns
ns
Note 1
IXGP2N100
IXGP2N100A
IXGP2N100
IXGP2N100A
ns
mJ
mJ
Eoff
0.5
RthJC
RthJA
5
K/W
110 K/W
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG.
,
The data herein reflects the advanced objective technical specification and characterization data from engineering lots.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
