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IXGH50N60AS

型号:

IXGH50N60AS

描述:

HiPerFAST IGBT - 表面贴装[ HiPerFAST IGBT - Surface Mountable ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

4 页

PDF大小:

96 K

HiPerFASTTM IGBT  
SurfaceMountable  
IXGH50N60A  
IXGH50N60AS  
VCES = 600 V  
IC25  
=
75 A  
VCE(sat) = 2.7 V  
tfi  
= 275 ns  
TO-247 SMD  
(50N60AS)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
TAB)  
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
IC25  
IC90  
ICM  
TC = 25°C  
75  
50  
A
A
A
TO-247 AD  
(50N60A)  
TC = 90°C  
TC = 25°C, 1 ms  
200  
SSOA  
VGE= 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 100  
A
(RBSOA)  
Clamped inductive load, L = 30 µH  
@ 0.8 VCES  
C (TAB)  
G
PC  
TC = 25°C  
250  
W
C
E
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TJM  
Tstg  
-55 ... +150  
Maximum Lead and Tab temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
l
International standard packages  
JEDEC TO-247 SMD surface  
mountable and JEDEC TO-247 AD  
High frequency IGBT  
High current handling capability  
2nd generation HDMOSTM process  
MOS Gate turn-on  
Md  
Mounting torque, TO-247 AD  
1.13/10 Nm/lb.in.  
Weight  
TO-247 SMD  
TO-247 AD  
4
6
g
g
l
l
l
l
- drive simplicity  
Applications  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
l
l
l
Switch-mode and resonant-mode  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
power supplies  
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 µA  
mA  
l
High power density  
Suitable for surface mounting  
Switching speed for high frequency  
1
l
l
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.7  
applications  
Easy to mount with 1 screw, TO-247  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
V
(insulated mounting screw hole)  
© 1996 IXYS All rights reserved  
92797H(9/96)  
IXGH50N60A IXGH50N60AS  
TO-247 AD Outline  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = IC90; VCE = 10 V,  
Pulse test, t 300 µs, duty cycle 2 %  
25  
35  
S
P
Cies  
Coes  
Cres  
4000  
430  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
100  
Qg  
200  
35  
250 nC  
50 nC  
e
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
80  
100 nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
50  
210  
200  
275  
4.8  
ns  
ns  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
IC = IC90, VGE = 15 V, L = 30 µH,  
VCE = 0.8 VCES, RG = Roff = 2.7 Ω  
ns  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES, higher  
TJ or increased RG  
400 ns  
mJ  
20.80 21.46  
15.75 16.26  
Eoff  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
td(on)  
tri  
50  
240  
3
ns  
ns  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V, L = 30 µH  
P
3.55  
5.89  
3.65  
.140 .144  
Q
6.40 0.232 0.252  
Eon  
td(off)  
tfi  
mJ  
ns  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
VCE = 0.8 VCES, RG = Roff = 2.7 Ω  
6.15 BSC  
280  
600  
9.6  
Remarks: Switching times may increase  
for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
ns  
TO-247 SMD Outline  
Eoff  
mJ  
RthJC  
RthCK  
0.50 K/W  
K/W  
0.25  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Min. Recommended Footprint (Dimensions in inches and (mm))  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
b
b1  
1.14  
1.91  
1.40  
2.13  
.045 .055  
.075 .084  
C
D
0.61  
20.80  
0.80  
21.34  
.024 .031  
.819 .840  
E
e
15.75  
5.45  
16.13  
BSC  
.620 .635  
.215 BSC  
L
4.90  
2.70  
2.10  
0.00  
1.90  
5.10  
2.90  
2.30  
0.10  
2.10  
.193 .201  
.106 .114  
.083 .091  
L1  
L2  
L3  
L4  
.00  
.004  
.075 .083  
ØP  
Q
3.55  
5.59  
3.65  
6.20  
.140 .144  
.220 .244  
R
S
4.32  
6.15  
4.83  
BSC  
.170 .190  
.242 BSC  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
IXGH50N60A IXGH50N60AS  
Fig. 1 Saturation Characteristics  
Fig. 2  
Output Characterstics  
80  
70  
60  
50  
40  
30  
20  
10  
0
350  
300  
250  
200  
150  
100  
50  
13V  
VGE = 15V  
TJ = 25°C  
TJ = 25°C  
11V  
9V  
VGE = 15V  
13V  
11V  
9V  
7V  
5V  
7V  
5V  
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20  
VCE - Volts  
VCE - Volts  
Fig. 3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
Fig. 4  
Temperature Dependence  
of Output Saturation Voltage  
10  
9
8
7
6
5
4
3
2
1
0
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
TJ = 25°C  
IC = 80A  
IC = 40A  
IC = 20A  
IC = 40A  
C = 20A  
I
4
5
6
7
8
9
10 11 12 13 14 15  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
Fig. 5 Input Admittance  
Fig. 6  
Temperature Dependence of  
Breakdown and Threshold Voltage  
80  
70  
60  
50  
40  
30  
20  
10  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VCE = 100V  
VGE(th) @ 250µA  
BVCES @ 3mA  
TJ = 25°C  
TJ = 125°C  
0
1
2
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
VGE - Volts  
© 1996 IXYS All rights reserved  
IXGH50N60A IXGH50N60AS  
Fig.7 Gate Charge  
Fig.8 Turn-Off Safe Operating Area  
15  
12  
9
100  
IC = 40A  
VCE = 500V  
10  
TJ = 125°C  
dV/dt < 3V/ns  
1
6
0.1  
3
0
0.01  
0
50  
100  
150  
200  
250  
0
100 200 300 400 500 600 700  
VCE - Volts  
Total Gate Charge - (nC)  
Fig.9 Capacitance Curves  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
Cies  
Coes  
Cres  
0
0
5
10  
15  
20  
25  
VCE - Volts  
Fig.10 Transient Thermal Impedance  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D = Duty Cycle  
0.01  
0.001  
D=0.01  
Single Pulse  
0.00001  
0.0001  
0.001  
0.01  
Pulse Width - seconds  
0.1  
1
10  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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