找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXGH45N120

型号:

IXGH45N120

描述:

IGBT[ IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

66 K

IXGH 45N120 V  
IXGT 45N120 I  
= 1200 V  
75 A  
= 2.5 V  
= 390 ns  
CES  
=
IGBT  
HighVoltage,LowV  
C25  
V
CE(sat)  
CE(sat)  
t
fi(typ)  
Preliminary data sheet  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
1200  
1200  
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
C (TAB)  
IC25  
IC90  
ICM  
TC = 25°C, limited by leads  
TC = 90°C  
75  
45  
A
A
A
TO-247AD(IXGH)  
TC = 25°C, 1 ms  
180  
SSOA  
(RBSOA)  
VGE = 15 V, TVJ = 125°C, RG = 5 Ω  
Clamped inductive load  
ICM = 90  
@ 0.8 VCES  
A
TAB)  
G
C
E
PC  
TC = 25°C  
300  
W
G = Gate,  
E=Emitter,  
C = Collector,  
TAB = Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
l
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
Maximum Tab temperature for soldering SMD devices for 10 s  
300  
°C  
°C  
International standard packages  
JEDEC TO-268 and  
JEDEC TO-247 AD  
High current handling capability  
MOS Gate turn-on  
260  
l
l
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
- drive simplicity  
Molding epoxies meet UL 94 V-0  
flammability classification  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
l
Applications  
l
AC motor speed control  
l
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
l
l
power supplies  
Capacitor discharge  
BVCES  
VGE(th)  
IC = 1 mA, VGE = 0 V  
IC = 750 µA, VCE = VGE  
1200  
2.5  
V
V
l
5
ICES  
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
250  
2
µA  
mA  
Advantages  
l
High power density  
l
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
Suitable for surface mounting  
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
l
VCE(sat)  
IC = IC90, VGE = 15 V  
2.5  
98666A (11/01)  
© 2001 IXYS All rights reserved  
IXGH 45N120  
IXGT 45N120  
TO-247 AD Outline  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
gfs  
IC = IC90; VCE = 10 V,  
Pulse test, t 300 µs, duty cycle 2 %  
33  
44  
S
A
P
IC(ON)  
VGE = 10V, VCE = 10V  
220  
Cies  
Coes  
Cres  
4700  
255  
89  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
e
Qg  
170  
28  
nC  
nC  
nC  
Dim.  
A
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
Qge  
Qgc  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
57  
A
1
A
2
Inductive load, TJ = 25°C  
b
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
td(on)  
tri  
td(off)  
tfi  
55  
28  
ns  
ns  
b
1
IC = IC90, VGE = 15 V  
VCE = 0.8 VCES, RG = Roff = 5 Ω  
b
2
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
370  
390  
14  
800 ns  
700 ns  
25 mJ  
20.80 21.46  
15.75 16.26  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
e
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
.780 .800  
.177  
Eoff  
L
L1  
td(on)  
tri  
64  
32  
ns  
ns  
mJ  
ns  
ns  
P
3.55  
5.89  
3.65 .140 .144  
6.40 0.232 0.252  
Inductive load, TJ = 125°C  
IC = IC90, VGE = 15 V  
Q
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Eon  
td(off)  
tfi  
3.0  
VCE = 0.8 VCES, RG = Roff = 5 Ω  
660  
740  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
,
TO-268 Outline  
Eoff  
25  
mJ  
RthJC  
0.42 K/W  
RthCK  
(TO-247)  
0.25  
K/W  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
Min Recommended Footprint  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
13.6  
e
H
L
5.45 BSC  
18.70 19.10  
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
1.20  
1.40  
.047 .055  
L2  
L3  
L4  
1.00  
0.25 BSC  
3.80 4.10  
1.15  
.039 .045  
.010 BSC  
.150 .161  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
厂商 型号 描述 页数 下载

IXYS

IXGA10N60 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

IXYS

IXGA10N60A 低VCE ( SAT )的IGBT ,高速IGBT[ Low VCE(sat) IGBT, High speed IGBT ] 2 页

ETC

IXGA10N60AU1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

ETC

IXGA10N60U1 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 20A I(C ) | TO- 263AA\n[ TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AA ] 2 页

IXYS

IXGA12N100 IGBT[ IGBT ] 2 页

IXYS

IXGA12N100A IGBT[ IGBT ] 2 页

IXYS

IXGA12N100AU1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N100U1 IGBT - Combi机包[ IGBT - Combi Pack ] 4 页

IXYS

IXGA12N120A2 IGBT优化切换至为5KHz[ IGBT Optimized for switching up to 5KHz ] 5 页

IXYS

IXGA12N120A3 GenX3 1200V的IGBT[ GenX3 1200V IGBTs ] 5 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.189017s