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IXGA24N60C

型号:

IXGA24N60C

描述:

HiPerFAST IGBT系列光速[ HiPerFAST IGBT Lightspeed Series ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

102 K

HiPerFASTTM IGBT  
LightspeedTM Series  
IXGA 24N60C  
IXGP 24N60C  
VCES  
IC25  
= 600 V  
= 48 A  
VCE(sat)typ = 2.1 V  
tfi typ  
= 60 ns  
Symbol  
Test Conditions  
Maximum Ratings  
TO-220 AB (IXGP)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
C (TAB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
48  
24  
96  
A
A
A
TO-263 AA (IXGA)  
SSOA  
V
= 15 V, TVJ = 125°C, R = 22 Ω  
ICM = 48  
A
(RBSOA)  
CGlaEmped inductive load, LG= 100 µH  
TC = 25°C  
@ 0.8 VCES  
G
E
C (TAB)  
PC  
150  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
z
International standard packages  
JEDEC TO-247 and surface  
mountable TO-268  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-263  
TO-220  
2
4
g
g
z
z
z
z
High frequency IGBT  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
- drive simplicity  
Symbol  
BVCES  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
z
PFC circuits  
z
Uninterruptible power supplies (UPS)  
z
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
Switched-mode and resonant-mode  
power supplies  
z
AC motor speed control  
VGE(th)  
ICES  
5
V
z
DC servo and robot drives  
z
DC choppers  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
200  
1
µA  
TJJ = 150°C  
mA  
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
V
z
High power density  
z
Very fast switching speeds for high  
VCE(sat)  
IC = IC110, VGE = 15 V  
2.1  
2.5  
frequency applications  
98936 7/02)  
© 2002 IXYS All rights reserved  
IXGA 24N60C  
IXGP 24N60C  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-220 AB Outline  
IC = I ; V = 10 V,  
9
17  
S
Pulse Cte11s0t, tCE 300 µs, duty cycle 2 %  
Cies  
Coes  
Cres  
1500  
120  
40  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
Qg  
Qge  
Qgc  
55  
13  
17  
nC  
nC  
nC  
Pins:  
1 - Gate  
2 - Collector 3 - Emitter  
4 - Collector Bottom Side  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
15  
25  
75  
60  
0.24  
ns  
ns  
A
B
12.70 13.97 0.500 0.550  
IC = IC110, VGE = 15 V, L = 100 µH,  
14.73 16.00 0.580 0.630  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
C
9.91 10.66 0.390 0.420  
140 ns  
110 ns  
0.36 mJ  
D
3.54  
4.08 0.139 0.161  
Remarks: Switching times may  
increase for V (Clamp) > 0.8 • VCES  
higher TJ or inCcEreased RG  
E
F
5.85  
6.85 0.230 0.270  
,
,
2.54  
3.18 0.100 0.125  
Eoff  
G
1.15  
2.79  
1.65 0.045 0.065  
5.84 0.110 0.230  
H
td(on)  
tri  
Eon  
td(off)  
tfi  
15  
25  
0.15  
130  
110  
0.6  
ns  
ns  
mJ  
ns  
ns  
mJ  
Inductive load, TJ = 125°C  
IC = IC110, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = Roff = 10 Ω  
J
0.64  
1.01 0.025 0.040  
K
2.54  
BSC 0.100  
BSC  
M
4.32  
1.14  
4.82 0.170 0.190  
N
1.39 0.045 0.055  
Q
R
0.35  
0.56 0.014 0.022  
2.79 0.090 0.110  
Remarks: Switching times may  
increase for V (Clamp) > 0.8 • VCES  
higher TJ or inCcEreased RG  
2.29  
Eoff  
TO-263 AA Outline  
RthJC  
RthCK  
0.83 K/W  
K/W  
0.25  
Min. Recommended Footprint  
(Dimensions in inches and mm)  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Botton Side  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
A
4.06  
4.83  
.160  
.190  
A1  
2.03  
2.79  
.080  
.110  
b
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
b2  
c
0.46  
0.74  
.018  
.029  
c2  
1.14  
1.40  
.045  
.055  
D
8.64  
7.11  
9.65  
8.13  
.340  
.280  
.380  
.320  
D1  
E
9.65  
6.86  
2.54  
10.29  
.380  
.405  
E1  
e
8.13  
.270  
.320  
BSC  
.100 BSC  
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.38  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.015  
L1  
L2  
L3  
L4  
R
0.46  
0.74  
.018  
.029  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:  
4,835,592 4,881,106  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
4,850,072 4,931,844  
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