IXGH 50N60B IXGK 50N60B
IXGJ 50N60B IXGT 50N60B
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD (IXGH) Outline
min. typ. max.
IC = IC90; VCE = 10 V,
25
42
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
1
2
3
Cies
Coes
Cres
4100
310
95
pF
pF
pF
Terminals:
1 -Gate
2 -Collector
3 -Emitter
Tab-Collector
VCE = 25 V, VGE = 0 V, f = 1 MHz
QG
160
30
nC
nC
nC
QGE
QGC
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
55
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
50
ns
ns
ns
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
IC = IC90, VGE = 15 V
50
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
150 250
120 250
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
ns
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
Eoff
3.0
4.5
mJ
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
td(on)
tri
50
50
ns
ns
mJ
ns
Inductive load, TJ = 125°C
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
IC = IC90, VGE = 15 V
Eon
td(off)
tfi
3
VCE = 0.8 • VCES, RG = Roff = 2.7 Ω
200
250
4.2
Remarks: Switching times may increase
for VCE (Clamp) > 0.8 • VCES, higher TJ or
increased RG
TO-264 AA (IXGK) Outline
ns
mJ
Eoff
RthJC
RthCK
0.42 K/W
TO-247 & TO-268 leaded packages
TO-264 package
0.25
0.15
K/W
K/W
TO-268(IXGT)Outline
TO-268 (IXGJ) Leaded Outline
Millimeter
Inches
Max.
Dim.
Min.
Max.
Min.
.190
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.202
.114
.083
.100
.079
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
c
D
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
Terminals:
1 - Gate
2 -
E
e
5.46BSC
.215BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
Collector
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
