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IXFT68N20

型号:

IXFT68N20

描述:

HiPerFET功率MOSFET[ HIPERFET POWER MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

135 K

HiPerFETTM  
Power MOSFETs  
VDSS ID25 RDS(on)  
IXFH/IXFT68N20  
IXFH/IXFT74N20  
200 V 68 A 35 mW  
200 V 74 A 30 mW  
trr £ 200 ns  
N-ChannelEnhancementMode  
Highdv/dt, Lowtrr, HDMOSTM Family  
Symbol  
TestConditions  
Maximum Ratings  
TO-247AD(IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
V
TJ = 25°C to 150°C; RGS = 1 MW  
V
(TAB)  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
IDM  
IAR  
TC = 25°C  
68N20  
74N20  
68N20  
74N20  
68N20  
74N20  
68  
74  
272  
296  
68  
A
A
A
A
A
A
TO-268 (D3) ( IXFT)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
G
(TAB)  
74  
S
EAR  
TC = 25°C  
45  
5
mJ  
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
,
V/ns  
TJ £ 150°C, RG = 2 W  
PD  
TC = 25°C  
360  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
• International standard packages  
• Low R  
HDMOSTM process  
TJM  
Tstg  
• RuggeDdS (pono) lysilicon gate cell structure  
• Unclamped Inductive Switching (UIS)  
rated  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic Rectifier  
-55 ... +150  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Md  
1.13/10 Nm/lb.in.  
Weight  
6
g
Applications  
• DC-DC converters  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
• Synchronous rectification  
• Battery chargers  
min.typ.  
max.  
• Switched-mode and resonant-mode  
power supplies  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 4 mA  
200  
2
V
V
• DC choppers  
• AC motor control  
VGS(th)  
4
• Temperature and lighting controls  
• Low voltage relays  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
Advantages  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
200  
1
mA  
mA  
• Easy to mount with 1 screw (TO-247)  
(isolated mounting screw hole)  
• High power surface package  
• High power density  
RDS(on)  
VGS= 10 V, ID = 0.5 ID25  
74N20  
68N20  
30 mW  
35 mW  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
© 2000 IXYS All rights reserved  
97522C (8/00)  
IXFH 68N20 IXFH 74N20  
IXFT 68N20 IXFT 74N20  
TO-247AD(IXFH)Outline  
Symbol  
TestConditions  
Characteristic Values  
Min. Typ.Max.  
(TJ = 25°C, unless otherwise specified)  
gfs  
VDS = 10 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
35  
45  
S
Ciss  
Coss  
Crss  
5400  
1160  
560  
pF  
pF  
pF  
1
2
3
Terminals:  
1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
td(on)  
tr  
td(off)  
tf  
40  
55  
120  
26  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 2 W (External)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Qg(on)  
Qgs  
Qgd  
280  
39  
135  
nC  
nC  
nC  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
(TO-247 Package)  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
RthJC  
RthCK  
0.35 K/W  
K/W  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
IXFH68N20 & IXFH74N80 characteristic curves can be found in the IXFK72N20/  
IXFK80N20 data sheet.  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
ÆP 3.55  
3.65  
.140 .144  
Source-DrainDiode  
Characteristic Values  
Q
5.89  
6.40 0.232 0.252  
(TJ = 25°C, unless otherwise specified)  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
Symbol  
IS  
TestConditions  
Min.  
Typ. Max.  
VGS = 0 V  
68N20  
74N20  
68  
74  
A
A
TO-268 Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
68N20  
74N20  
272  
296  
A
A
VSD  
IF = IS, VGS = 0 V,  
1.5  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
200  
ns  
IF = 25A  
-di/dt = 100 A/ms,  
VR = 100 V  
QRM  
IRM  
0.85  
8
mC  
A
Min Recommended Footprint  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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