HiPerFETTM
IXFJ 13N50 VDSS
= 500 V
Power MOSFETs
ID (cont) = 13 A
RDS(on) = 0.4 W
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
trr
£ 250 ns
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
500
500
V
V
G
TJ = 25°C to 150°C; RGS = 1 MW
D
é
(TAB)
VGS
Continuous
Transient
±20
±30
V
V
S
VGSM
ID25
IDM
IAR
TC = 25°C
13
52
13
A
A
A
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAR
TC = 25°C
18
5
mJ
Features
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
• Low profile, high power package
• Long creep and strike distances
• Easy up-grade path for TO-220
designs
PD
TC = 25°C
180
W
TJ
-55 ... +150
150
°C
°C
°C
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJM
Tstg
-55 ... +150
TL
1.6 mm (0.062 in.) from case for 10 s
300
5
°C
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Weight
g
Applications
• DC-DC converters
• Synchronousrectification
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
500
2
V
V
VGS(th)
VDS = VGS, ID = 2.5 mA
4
• AC motor control
• Temperatureandlightingcontrols
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
200 mA
1
Advantages
mA
• High power, low profile package
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.4
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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