IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
Symbol
gfs
TestConditions
Characteristic Values
TO-247 AD (IXFH) Outline
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
16
26
S
Ciss
Coss
Crss
3600
370
57
pF
pF
pF
1
2
3
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
td(on)
tr
td(off)
tf
20
25
58
20
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25
RG = 4 Ω (External)
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
Qg(on)
Qgs
60
20
25
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
Qgd
C
D
E
.4
20.80
15.75
.8
21.46
16.26
.016
.819
.610
.031
.845
.640
RthJC
RthCK
0.31
K/W
K/W
0.21
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
∅P
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
Q
Symbol
IS
TestConditions
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
VGS = 0 V
26
104
1.5
A
ISM
Repetitive
A
V
PLUS220 (IXFV) Outline
VSD
IF = IS, VGS = 0 V,
E
E1
A
A1
E1
L2
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
300
3.3
ns
D1
D
QRM
VR = 100V
µC
L3
L1
PLUS220SMD (IXFV_S) Outline
L
A
A1
E
E1
E1
L2
c
3X b
A2
2X e
A
A1
A2
A3
b
c
D
D1
E
E1
e
Terminals: 1 - Gate
3 - Source
2 - Drain
TAB - Drain
D
A3
L4
L3
L
A
L1
A1
A2
b
c
D
D1
E
E1
e
2X b
c
e
A2
L
L1
L2
L3
L4
Terminals: 1 - Gate
3 - Source
2 - Drain
TAB - Drain
L
L1
L2
L3
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
