IXGK55N120A3H1
IXGX55N120A3H1
Symbol
Test Conditions
Characteristic Values
TO-264 (IXGK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = IC110, VCE = 10V, Note 2
VCE = 25V, VGE = 0V, f = 1 MHz
30
45
S
Cies
Coes
Cres
Qg(on)
Qge
Qgc
td(on)
tri
4340
300
115
185
25
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
75
23
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 0.8 • VCES, RG = 3Ω
Note 3
42
Eon
td(off)
tfi
5.1
365
282
13.3
24
Terminals:
1
2
3
= Gate
= Collector
=
Emitter
Eoff
td(on)
tri
mJ
ns
Inductive load, TJ = 125°C
46
ns
IC = IC110, VGE = 15V
Eon
td(off)
tfi
9.5
618
635
29.0
mJ
ns
VCE = 0.8 • VCES, RG = 3Ω
ns
Note 3
Eoff
RthJC
RthCK
mJ
0.27 °C/W
°C/W
0.15
PLUS 247TM (IXGX) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
trr
IF = 60A, VGE = 0V, Note 2
IF = 60A, VGE = 0V,
1.85
1.90
2.5
V
V
TJ = 150°C
200
ns
-diF/dt = 350A/μs, VR = 600V, TJ = 100°C
IRM
24.6
A
RthJC
0.42 °C/W
Terminals:
1
2
3
= Gate
= Collector
=
Emitter
Notes:
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
1. Part must be heatsunk for high-temp Ices measurement.
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
ADVANCE TECHNICAL INFORMATION
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
